Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Luo, Zhe, Maassen, Jesse, Deng, Yexin, Du, Yuchen, Garrelts, Richard P., Lundstrom, Mark S, Ye, Peide D., Xu, Xianfan
Published in Nature communications (16.10.2015)
Published in Nature communications (16.10.2015)
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Journal Article
Compact Models and the Physics of Nanoscale FETs
Lundstrom, Mark S., Antoniadis, Dimitri A.
Published in IEEE transactions on electron devices (01.02.2014)
Published in IEEE transactions on electron devices (01.02.2014)
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Journal Article
Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs
Koswatta, S.O., Lundstrom, M.S., Nikonov, D.E.
Published in IEEE transactions on electron devices (01.03.2009)
Published in IEEE transactions on electron devices (01.03.2009)
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Journal Article
Bandstructure Effects in Silicon Nanowire Electron Transport
Neophytou, N., Paul, A., Lundstrom, M.S., Klimeck, G.
Published in IEEE transactions on electron devices (01.06.2008)
Published in IEEE transactions on electron devices (01.06.2008)
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Journal Article
Performance Comparisons of III-V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)
Seung Hyun Park, Yang Liu, Kharche, N., Jelodar, Mehdi Salmani, Klimeck, G., Lundstrom, M. S., Luisier, M.
Published in IEEE transactions on electron devices (01.08.2012)
Published in IEEE transactions on electron devices (01.08.2012)
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Journal Article
Contact Effects in Graphene Nanoribbon Transistors
Liang, Gengchiau, Neophytou, Neophytos, Lundstrom, Mark S, Nikonov, Dmitri E
Published in Nano letters (01.07.2008)
Published in Nano letters (01.07.2008)
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Journal Article
Substrate Gating of Contact Resistance in Graphene Transistors
Berdebes, D., Low, T., Yang Sui, Appenzeller, J., Lundstrom, M. S.
Published in IEEE transactions on electron devices (01.11.2011)
Published in IEEE transactions on electron devices (01.11.2011)
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Journal Article
On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs
Yang Liu, Luisier, M., Majumdar, A., Antoniadis, D. A., Lundstrom, M. S.
Published in IEEE transactions on electron devices (01.04.2012)
Published in IEEE transactions on electron devices (01.04.2012)
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Journal Article
Performance Analysis of 60-nm Gate-Length III-V InGaAs HEMTs: Simulations Versus Experiments
Neophytou, N., Rakshit, T., Lundstrom, M.S.
Published in IEEE transactions on electron devices (01.07.2009)
Published in IEEE transactions on electron devices (01.07.2009)
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Journal Article
Sub-10 nm Carbon Nanotube Transistor
Franklin, Aaron D, Luisier, Mathieu, Han, Shu-Jen, Tulevski, George, Breslin, Chris M, Gignac, Lynne, Lundstrom, Mark S, Haensch, Wilfried
Published in Nano letters (08.02.2012)
Published in Nano letters (08.02.2012)
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Journal Article
Moore’s law: The journey ahead
Lundstrom, Mark S., Alam, Muhammad A.
Published in Science (American Association for the Advancement of Science) (18.11.2022)
Published in Science (American Association for the Advancement of Science) (18.11.2022)
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Journal Article
Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In2O3 Thin-Film Transistors
Niu, Chang, Lin, Zehao, Askarpour, Vahid, Zhang, Zhuocheng, Tan, Pukun, Si, Mengwei, Shang, Zhongxia, Zhang, Yizhi, Wang, Haiyan, Lundstrom, Mark S., Maassen, Jesse, Ye, Peide D.
Published in IEEE transactions on electron devices (01.05.2024)
Published in IEEE transactions on electron devices (01.05.2024)
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Journal Article
Simulations of nanowire transistors: atomistic vs. effective mass models
Neophytou, Neophytos, Paul, Abhijeet, Lundstrom, Mark S., Klimeck, Gerhard
Published in Journal of computational electronics (01.09.2008)
Published in Journal of computational electronics (01.09.2008)
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Journal Article
Conference Proceeding