Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS2/WSe2
Liu, Menggan, Niu, Jiebin, Yang, Guanhua, Chen, Kaifei, Lu, Wendong, Liao, Fuxi, Lu, Congyan, Lu, Nianduan, Li, Ling
Published in Advanced electronic materials (01.02.2023)
Published in Advanced electronic materials (01.02.2023)
Get full text
Journal Article
Monolithically Stacked Two Layers of a-IGZO-Based Transistors Upon a-IGZO-Based Analog/Logic Circuits
Lu, Wendong, Lu, Congyan, Yang, Guanhua, Liu, Menggan, Chen, Kaifei, Liao, Fuxi, Duan, Xinlv, Lu, Nianduan, Li, Ling
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
Get full text
Journal Article
Improved Self-Powered Photodetection of Ferroelectric PbZr0.52Ti0.48O3 Thin Films via Interfacial Engineering
Shen, Xuemin, Wu, Zhichen, Lu, Wendong, Chen, Mingming, Cheng, Peiyu, Chen, Sixue, Liu, Yuan, Wang, Quan, Cao, Dawei
Published in Journal of physical chemistry. C (10.11.2022)
Published in Journal of physical chemistry. C (10.11.2022)
Get full text
Journal Article
Improved Self-Powered Photodetection of Ferroelectric PbZr 0.52 Ti 0.48 O 3 Thin Films via Interfacial Engineering
Shen, Xuemin, Wu, Zhichen, Lu, Wendong, Chen, Mingming, Cheng, Peiyu, Chen, Sixue, Liu, Yuan, Wang, Quan, Cao, Dawei
Published in Journal of physical chemistry. C (10.11.2022)
Published in Journal of physical chemistry. C (10.11.2022)
Get full text
Journal Article
Contact Length Scaling in Dual-Gate IGZO TFTs
Wu, Zijing, Niu, Jiebin, Lu, Congyan, Bai, Ziheng, Chen, Kaifei, Wu, Zhenhua, Lu, Wendong, Liu, Menggan, Liao, Fuxi, Geng, Di, Lu, Nianduan, Yang, Guanhua, Li, Ling
Published in IEEE electron device letters (01.03.2024)
Published in IEEE electron device letters (01.03.2024)
Get full text
Journal Article
Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS 2 /WSe 2
Liu, Menggan, Niu, Jiebin, Yang, Guanhua, Chen, Kaifei, Lu, Wendong, Liao, Fuxi, Lu, Congyan, Lu, Nianduan, Li, Ling
Published in Advanced electronic materials (01.02.2023)
Published in Advanced electronic materials (01.02.2023)
Get full text
Journal Article
First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (5000s)
Liu, Menggan, Li, Zhi, Lu, Wendong, Chen, Kaifei, Niu, Jiebin, Liao, Fuxi, Wu, Zijing, Lu, Congyan, Li, Wei zeng, Geng, Di, Lu, Nianduan, Dou, Chunmeng, Yang, Guanhua, Li, Ling, Liu, Ming
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
Get full text
Conference Proceeding
Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec
Chen, Kaifei, Niu, Jiebin, Yang, Guanhua, Liu, Menggan, Lu, Wendong, Liao, Fuxi, Huang, Kailiang, Duan, XinLv, Lu, Congyan, Wang, Jiawei, Wang, Lingfei, Li, Mengmeng, Geng, Di, Zhao, Chao, Wang, Guilei, Lu, Nianduan, Li, Ling, Liu, Ming
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
Get full text
Conference Proceeding
Effects of closing and reopening live poultry markets on the epidemic of human infection with avian influenza A virus
Lu, Jian, Liu, Wendong, Xia, Rui, Dai, Qigang, Bao, Changjun, Tang, Fenyang, Zhu, Yefei, Wang, Qiao
Published in Journal of biomedical research (01.01.2016)
Published in Journal of biomedical research (01.01.2016)
Get full text
Journal Article
First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, ION=1500 μA/μm@VDS=1V and Retention Time>300s
Lu, Wendong, Zhu, Zhengyong, Chen, Kaifei, Liu, Menggan, Kang, Bok-Moon, Duan, Xinlv, Niu, Jiebin, Liao, Fuxi, Dan, Wang, Wu, Xie-Shuai, Son, Joohwan, Xiao, De-Yuan, Wang, Gui-Lei, Yoo, Abraham, Cao, Kan-Yu, Geng, Di, Lu, Nianduan, Yang, Guanhua, Zhao, Chao, Li, Ling, Liu, Ming
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Get full text
Conference Proceeding
Improved Multi-bit Statistics of Novel Dual-gate IGZO 2T0C DRAM with In-cell VTH Compensation and ΔVSN/ΔVDATA Boosting Technique
Chen, Kaifei, Zhu, Zhengyong, Lu, Wendong, Liu, Menggan, Liao, Fuxi, Wu, Zijing, Niu, Jiebin, Kang, Bok-Moon, Dan, Wang, Wu, Xie-Shuai, Liu, Ming-Xu, Yu, Yong, Yang, Nan, Wang, Gui-Lei, Cao, Kan-Yu, Wang, Lingfei, Geng, Di, Lu, Nianduan, Yang, Guanhua, Zhao, Chao, Nathan, Arokia, Li, Ling, Liu, Ming
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Get full text
Conference Proceeding
Water piece cooling device and steel rolling device
Li Guowang, Zhu Huachuan, Zou Jianxun, Sun Jieqing, Lu Wendong, Li Yanping, Liu Shuheng, Mao Nailiang, Xu Jie, Yan Liang, Shang Jiuhua, Huang Huanhuan, Wei Taifa, Sun Lingyun, Hu Naizhi, Zhang Ming, Jiao Yin
Year of Publication 03.08.2016
Get full text
Year of Publication 03.08.2016
Patent