A Novel IGBT Structure With Floating N-Doped Buried Layer in P-Base to Suppress Latch-Up
Yang, Fei, Tan, Ji, Zhang, Guangyin, Shen, Qianxing, Teng, Yuan, Zhu, Yangjun, Lu, Shuojin, Tian, Xiaoli
Published in IEEE electron device letters (01.09.2016)
Published in IEEE electron device letters (01.09.2016)
Get full text
Journal Article
A novel optimization design for 3.3 kV injection-enhanced gate transistor
Tian, Xiaoli, Chu, Weili, Lu, Jiang, Lu, Shuojin, Yu, Qiaoqun, Zhu, Yangjun
Published in Journal of semiconductors (01.01.2014)
Published in Journal of semiconductors (01.01.2014)
Get full text
Journal Article
Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions
Lu, Jiang, Tian, Xiaoli, Lu, Shuojin, Zhou, Hongyu, Zhu, Yangjun, Han, Zhengsheng
Published in Journal of semiconductors (01.03.2013)
Published in Journal of semiconductors (01.03.2013)
Get full text
Journal Article
A novel high performance SemiSJ-CSTBT with p-pillar under the bottom of the trench gateProject supported by the National Major Science and Technology Special Project of China (No. 2013ZX02305005-002) and the Major Program of the National Natural Science Foundation of China (No. 51490681)
Jia, Yan, Chen, Hong, Tan, Ji, Lu, Shuojin, Zhu, Yangjun
Published in Journal of semiconductors (01.08.2016)
Published in Journal of semiconductors (01.08.2016)
Get full text
Journal Article
4500 V SPT super(+) IGBT optimization on static and dynamic losses
Dai, Qingyun, Tian, Xiaoli, Zhang, Wenliang, Lu, Shuojin, Zhu, Yangjun
Published in Journal of semiconductors (01.09.2015)
Published in Journal of semiconductors (01.09.2015)
Get full text
Journal Article
4500 V SPT+ IGBT optimization on static and dynamic lossesProject supported by the National Major Science and Technology Special Project of China (No. 2011ZX02504-002)
Dai, Qingyun, Tian, Xiaoli, Zhang, Wenliang, Lu, Shuojin, Zhu, Yangjun
Published in Journal of semiconductors (01.09.2015)
Published in Journal of semiconductors (01.09.2015)
Get full text
Journal Article
Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBTProject supported by the National Major Science and Technology Special Project of China (No. 2011ZX02503-003)
Tian, Xiaoli, Lu, Jiang, Teng, Yuan, Zhang, Wenliang, Lu, Shuojin, Zhu, Yangjun
Published in Journal of semiconductors (01.03.2015)
Published in Journal of semiconductors (01.03.2015)
Get full text
Journal Article
A Novel Thermal Spectrum Analysis Method for Reliability Analysis of Semiconductor Devices
Yangjun Zhu, Chunyan Miao, Qinghai Miao, Xinghua Zhang, Shuojin Lu
Published in 2007 Canadian Conference on Electrical and Computer Engineering (01.04.2007)
Published in 2007 Canadian Conference on Electrical and Computer Engineering (01.04.2007)
Get full text
Conference Proceeding