POSS-CNN: An Automatically Generated Convolutional Neural Network with Precision and Operation Separable Structure Aiming at Target Recognition and Detection
Hou, Jia, Zhang, Jingyu, Chen, Qi, Xiang, Siwei, Meng, Yishuo, Wang, Jianfei, Lu, Cimang, Yang, Chen
Published in Information (Basel) (01.11.2023)
Published in Information (Basel) (01.11.2023)
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Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes
Wang, Lei, Lu, Cimang, Lu, Jianing, Liu, Lei, Liu, Ningyang, Chen, Yujie, Zhang, Yanfeng, Gu, Erdan, Hu, Xiaodong
Published in Optics express (18.07.2011)
Published in Optics express (18.07.2011)
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Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
Liu, Lei, Wang, Lei, Lu, Cimang, Li, Ding, Liu, Ningyang, Li, Lei, Yang, Wei, Cao, Wenyu, Chen, Weihua, Du, Weimin, Hu, Xiaodong, Feng, Zhe Chuan, Huang, Wei, Lee, Yueh-Chien
Published in Applied physics. A, Materials science & processing (01.09.2012)
Published in Applied physics. A, Materials science & processing (01.09.2012)
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Fast Algorithms for Exact IR Drop De-Embedding in Analog Multiply-Accumulate Computing
Gao, Shifan, Yang, Fan, Lu, Cimang, Zhao, Yi
Published in IEEE transactions on electron devices (01.11.2022)
Published in IEEE transactions on electron devices (01.11.2022)
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Journal Article
Structural coordination of rigidity with flexibility in gate dielectric films for sub-nm EOT Ge gate stack reliability
Cimang Lu, Toriumi, Akira
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
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Dramatic effects of hydrogen-induced out-diffusion of oxygen from Ge surface on junction leakage as well as electron mobility in n-channel Ge MOSFETs
Choong Hyun Lee, Nishimura, Tomonori, Cimang Lu, Kabuyanagi, Shoichi, Toriumi, Akira
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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Conference Proceeding
High electron mobility n-channel Ge MOSFETs with sub-nm EOT
Toriumi, Akira, Choong Hyun Lee, Cimang Lu, Nishimura, Tomonori
Published in 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2014)
Published in 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2014)
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Conference Proceeding
Reliability assessment of germanium gate stacks with promising initial characteristics
Lu, Cimang, Lee, Choong Hyun, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira
Published in Applied physics express (01.02.2015)
Published in Applied physics express (01.02.2015)
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Journal Article
(Invited) High Electron Mobility n-Channel Ge MOSFETs with Sub-Nm EOT
Toriumi, Akira, Lee, Choonghyun, Lu, Cimang, Nishimura, Tomonori
Published in ECS transactions (09.08.2014)
Published in ECS transactions (09.08.2014)
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Journal Article
Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations
Liu, Ningyang, Li, Ding, Wang, Lei, Liu, Lei, Yang, Wei, Li, Lei, Cao, Wenyu, Lu, Cimang, Wan, Chenghao, Chen, Weihua, Hu, Xiaodong
Published in Jpn J Appl Phys (01.07.2012)
Published in Jpn J Appl Phys (01.07.2012)
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Journal Article
Enhanced Hole Transport in Mg-Doped Al x Ga 1- x N/GaN Superlattices by Strain and Period Modulations
Liu, Ningyang, Li, Ding, Wang, Lei, Liu, Lei, Yang, Wei, Li, Lei, Cao, Wenyu, Lu, Cimang, Wan, Chenghao, Chen, Weihua, Hu, Xiaodong
Published in Japanese Journal of Applied Physics (01.07.2012)
Published in Japanese Journal of Applied Physics (01.07.2012)
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Journal Article
Enhanced Hole Transport in Mg-Doped Al x Ga 1-x N/GaN Superlattices by Strain and Period Modulations
Liu, Ningyang, Li, Ding, Wang, Lei, Liu, Lei, Yang, Wei, Li, Lei, Cao, Wenyu, Lu, Cimang, Wan, Chenghao, Chen, Weihua, Hu, Xiaodong
Published in Japanese Journal of Applied Physics (01.07.2012)
Published in Japanese Journal of Applied Physics (01.07.2012)
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Journal Article
High Electron Mobility n-Channel Ge MOSFETs with Sub-Nm EOT
Toriumi, Akira, Lee, Choonghyun, Lu, Cimang, Nishimura, Tomonori
Published in Meeting abstracts (Electrochemical Society) (05.08.2014)
Published in Meeting abstracts (Electrochemical Society) (05.08.2014)
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