Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing
Lin, Yu-Hsuan, Wang, Chao-Hung, Lee, Ming-Hsiu, Lee, Dai-Ying, Lin, Yu-Yu, Lee, Feng-Min, Lung, Hsiang-Lan, Wang, Keh-Chung, Tseng, Tseung-Yuen, Lu, Chih-Yuan
Published in IEEE transactions on electron devices (01.03.2019)
Published in IEEE transactions on electron devices (01.03.2019)
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Journal Article
Deteriorated Non-Linear Interference in 3D NAND Cell With Word-Line Pitch Scaling Due to the Incapability to Turn on Non-Gate-Controlled Region
Chang, Yao-Wen, Wu, Guan-Wei, Yang, I-Chen, Huang, Yu-Hung, Lee, Ya-Jui, Chen, Kuan-Fu, Chen, Yin-Jen, Lu, Tao-Cheng, Chen, Kuang-Chao, Lu, Chih-Yuan
Published in IEEE electron device letters (01.11.2023)
Published in IEEE electron device letters (01.11.2023)
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Journal Article
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film
Chang, Yao-Wen, Wu, Guan-Wei, Yang, I-Chen, Huang, Yu-Hung, Lee, Ya-Jui, Lee, Chih-Hsiung, Chen, Kuan-Fu, Lu, Tao-Cheng, Chen, Kuang-Chao, Lu, Chih-Yuan
Published in IEEE electron device letters (01.12.2022)
Published in IEEE electron device letters (01.12.2022)
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Journal Article
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
Liu, Yu-Heng, Jiang, Cheng-Min, Chen, Wei-Chun, Wang, Tahui, Tsai, Wen-Jer, Lu, Tao-Cheng, Chen, Kuang-Chao, Lu, Chih-Yuan
Published in IEEE electron device letters (01.01.2017)
Published in IEEE electron device letters (01.01.2017)
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Journal Article
Performance Enhancement of 3-D NAND Flash Featuring a Two-Step Dummy Wordline Program Waveform and Pair-Bitline Program Scheme
Chen, Wei-Chen, Lue, Hang-Ting, Hsieh, Chih-Chang, Wang, Keh-Chung, Lu, Chih-Yuan
Published in IEEE transactions on electron devices (01.01.2020)
Published in IEEE transactions on electron devices (01.01.2020)
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Journal Article
A Comprehensive Study of Double-Density Hemi-Cylindrical (HC) 3-D NAND Flash
Hsu, Tzu-Hsuan, Lue, Hang-Ting, Du, Pei-Ying, Chen, Wei-Chen, Yeh, Teng-Hao, Lee, Lou, Chiu, Chia-Jung, Wang, Keh-Chung, Lu, Chih-Yuan
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell String
Chou, Y. L., Tahui Wang, Lin, Mercator, Chang, Y. W., Liu, Lenvis, Huang, S. W., Tsai, W. J., Lu, T. C., Chen, K. C., Chih-Yuan Lu
Published in IEEE electron device letters (01.08.2016)
Published in IEEE electron device letters (01.08.2016)
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Journal Article
A Novel Confined Nitride-Trapping Layer Device for 3-D NAND Flash With Robust Retention Performances
Fu, Chung-Hao, Lue, Hang-Ting, Hsu, Tzu-Hsuan, Chen, Wei-Chen, Lee, Guan-Ru, Chiu, Chia-Jung, Wang, Keh-Chung, Lu, Chih-Yuan
Published in IEEE transactions on electron devices (01.03.2020)
Published in IEEE transactions on electron devices (01.03.2020)
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Journal Article
Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String
Lin, Wei-Liang, Tsai, Wen-Jer, Cheng, C. C., Ku, S. H., Liu, Lenvis, Hwang, S. W., Lu, Tao-Cheng, Chen, Kuang-Chao, Tseng, Tseung-Yuen, Lu, Chih-Yuan
Published in IEEE transactions on electron devices (01.04.2019)
Published in IEEE transactions on electron devices (01.04.2019)
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Journal Article
A novel 1T2R self-reference physically unclonable function suitable for advanced logic nodes for high security level applications
Lin, Yu-Hsuan, Lee, Dai-Ying, Lee, Ming-Hsiu, Tseng, Po-Hao, Chen, Wei-Chen, Hsieh, Kuang-Yeu, Wang, Keh-Chung, Lu, Chih-Yuan
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
Hsiao, Yi-Hsuan, Lue, Hang-Ting, Chen, Wei-Chen, Chang, Kuo-Pin, Shih, Yen-Hao, Tsui, Bing-Yue, Hsieh, Kuang-Yeu, Lu, Chih-Yuan
Published in IEEE transactions on electron devices (01.06.2014)
Published in IEEE transactions on electron devices (01.06.2014)
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Journal Article
A high-efficiency, reliable multilevel hardware-accelerated annealer with in-memory spin coupling and complementary read algorithm
Wang, Yun-Yuan, Lin, Yu-Hsuan, Lee, Dai-Ying, Lu, Cheng-Hsien, Wei, Ming-Liang, Tseng, Po-Hao, Lee, Ming-Hsiu, Hsieh, Kuang-Yeu, Wang, Keh-Chung, Lu, Chih-Yuan
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
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Journal Article
A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM
Lin, Yu-Hsuan, Lee, Ming-Hsiu, Wu, Jau-Yi, Lin, Yu-Yu, Lee, Feng-Ming, Lee, Dai-Ying, Chiang, Kuang-Hao, Lai, Erh-Kun, Tseng, Tseung-Yuen, Lu, Chih-Yuan
Published in IEEE electron device letters (01.11.2016)
Published in IEEE electron device letters (01.11.2016)
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Journal Article
Reliability Assessment for an In-3D-NAND Approximate Searching Solution
Tseng, Po-Hao, Lin, Yu-Hsuan, Lee, Feng-Min, Bo, Tian-Cih, Lee, Ming-Hsiu, Hsieh, Kuang-Yeu, Wang, Keh-Chung, Lu, Chih-Yuan
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
Charge Loss Improvement in 3D Flash Memory by Molecular Oxidation of Tunneling Oxide
Jhang, Pei-Ci, Lu, Chi-Pin, Shieh, Jung-Yu, Yang, Ling-Wu, Yang, Tahone, Chen, Kuang-Chao, Lu, Chih-Yuan, Lue, Hang-Ting, Du, Pei-Ying, Lu, Chih-Yuan
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
Layer-Aware Program-and-Read Schemes for 3D Stackable Vertical-Gate BE-SONOS NAND Flash Against Cross-Layer Process Variations
Hung, Chun-Hsiung, Chang, Meng-Fan, Yang, Yih-Shan, Kuo, Yao-Jen, Lai, Tzu-Neng, Shen, Shin-Jang, Hsu, Jo-Yu, Hung, Shuo-Nan, Lue, Hang-Ting, Shih, Yen-Hao, Huang, Shih-Lin, Chen, Ti-Wen, Chen, Tzung Shen, Chen, Chung Kuang, Hung, Chi-Yu, Lu, Chih-Yuan
Published in IEEE journal of solid-state circuits (01.06.2015)
Published in IEEE journal of solid-state circuits (01.06.2015)
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Journal Article
Chip Demonstration of a High-Density (43Gb) and High-Search-Bandwidth (300Gb/s) 3D NAND Based In-Memory Search Accelerator for Ternary Content Addressable Memory (TCAM) and Proximity Search of Hamming Distance
Hsieh, Chih-Chang, Lue, Hang-Ting, Li, Yung-Chun, Hung, Shuo-Nan, Hung, Chun-Hsiung, Wang, Keh-Chung, Lu, Chih-Yuan
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding