Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels
TSAI, J.-H, LOUR, W.-S, HUANG, C.-H, YE, S.-S, MA, Y.-C
Published in Electronics letters (28.10.2010)
Published in Electronics letters (28.10.2010)
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Journal Article
Integration of n-and p-channel Ingap/InGaAs doped-channel pseudomorphic HFETs
TSAI, J.-H, LI, C.-M, LIU, W.-C, GUO, D.-F, CHIU, S.-Y, LOUR, W.-S
Published in Electronics letters (21.06.2007)
Published in Electronics letters (21.06.2007)
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The influence of base bias on the collector photocurrent for InGaP ∕ GaAs heterojunction phototransistors
Tan, S. W., Chen, H. R., Chen, W. T., Hsu, M. K., Lin, A. H., Lour, W. S.
Published in Journal of applied physics (01.02.2005)
Published in Journal of applied physics (01.02.2005)
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Comprehension and modelling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes
Chen, H R, Chen, W T, Hsu, M K, Tan, S W, Lour, W S
Published in Semiconductor science and technology (01.06.2005)
Published in Semiconductor science and technology (01.06.2005)
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Journal Article
Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate
Hsu, M K, Chen, H R, Chiu, S Y, Chen, W T, Liu, W C, Tasi, J H, Lour, W S
Published in Semiconductor science and technology (01.02.2007)
Published in Semiconductor science and technology (01.02.2007)
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Journal Article
Experiments and modelling of double-emitter HPTs with different emitter-area ratios for functional applications
Tan, S W, Chen, H R, Lin, A H, Chen, W T, Lour, W S
Published in Semiconductor science and technology (01.11.2004)
Published in Semiconductor science and technology (01.11.2004)
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Journal Article
Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate
Chen, H R, Hsu, M K, Chiu, S Y, Chen, W T, Chen, G H, Chang, Y C, Su, C C, Lour, W S
Published in Semiconductor science and technology (01.02.2007)
Published in Semiconductor science and technology (01.02.2007)
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Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation
TAN, Shih-Wei, CHEN, Hon-Rung, CHEN, Wei-Tien, HSU, Meng-Kai, LIN, An-Hung, LOUR, Wen-Shiung
Published in IEEE transactions on electron devices (01.02.2005)
Published in IEEE transactions on electron devices (01.02.2005)
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Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate
Tan, S W, Hsu, M K, Lin, A H, Chu, M Y, Chen, W T, Lour, W S
Published in Semiconductor science and technology (01.03.2004)
Published in Semiconductor science and technology (01.03.2004)
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Journal Article
New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD
Lour, W.-S., Chang, W.L., Shih, Y.M., Liu, W.C.
Published in IEEE electron device letters (01.06.1999)
Published in IEEE electron device letters (01.06.1999)
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Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications
Tsai, M-K, Tan, S-W, Wu, Y-W, Lour, W-S, Yang, Y-J
Published in Semiconductor science and technology (01.02.2002)
Published in Semiconductor science and technology (01.02.2002)
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