An EBIC Model for TCAD Simulation to Determine the Surface Recombination Rate in Semiconductor Devices
Kraxner, Andrea, Roger, Frederic, Loeffler, Bernhard, Faccinelli, Martin, Fisslthaler, Evelin, Minixhofer, Rainer, Hadley, Peter
Published in IEEE transactions on electron devices (01.11.2016)
Published in IEEE transactions on electron devices (01.11.2016)
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Journal Article
Semiconductor device with through-substrate via and corresponding method of manufacture
Carniello, Sara, Holzhaider, Rainer, Loeffler, Bernhard, Enichlmair, Hubert, Schrank, Franz, Kraft, Jochen
Year of Publication 05.11.2019
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Year of Publication 05.11.2019
Patent
SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA AND CORRESPONDING METHOD OF MANUFACTURE
CARNIELLO Sara, LOEFFLER Bernhard, KRAFT Jochen, SCHRANK Franz, ENICHLMAIR Hubert, HOLZHAIDER Rainer
Year of Publication 03.11.2016
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Year of Publication 03.11.2016
Patent