Search Results - "LOCHTEFELD ANTHONY J" :: K.UTB vyhledávací portál

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Methods for preserving strained semiconductor substrate layers during CMOS processing

by CURRIE MATTHEW T, LOCHTEFELD ANTHONY J
Year of Publication 24.04.2007

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Methods for preserving strained semiconductor substrate layers during CMOS processing

by Currie, Matthew T, Lochtefeld, Anthony J
Year of Publication 10.04.2007

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Methods for preserving strained semiconductor substrate layers during CMOS processing

by CURRIE MATTHEW T, LOCHTEFELD ANTHONY J
Year of Publication 10.04.2007

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METHODS FOR PRESERVING STRAINED SEMICONDUCTOR SUBSTRATE LAYERS DURING CMOS PROCESSING

by CURRIE MATTHEW T, LOCHTEFELD ANTHONY J
Year of Publication 22.02.2007

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Elevated source and drain elements for strained-channel heterojuntion field-effect transistors

by Lochtefeld, Anthony J, Langdo, Thomas A, Westhoff, Richard
Year of Publication 10.11.2009

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Elevated source and drain elements for strained-channel heterojuntion field-effect transistors

by LANGDO THOMAS A, LOCHTEFELD ANTHONY J, WESTHOFF RICHARD
Year of Publication 10.11.2009

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Gate material for semiconductor device fabrication

by LOCHTEFELD ANTHONY J, CURRIE MATTHEW T
Year of Publication 16.11.2006

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Methods of fabricating semiconductor structures having epitaxially grown source and drain elements

by LANGDO THOMAS A, LOCHTEFELD ANTHONY J
Year of Publication 16.11.2006

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Methods of fabricating semiconductor structures having epitaxially grown source and drain elements

by Langdo, Thomas A, Lochtefeld, Anthony J
Year of Publication 17.10.2006

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Methods of fabricating semiconductor structures having epitaxially grown source and drain elements

by LANGDO THOMAS A, LOCHTEFELD ANTHONY J
Year of Publication 17.10.2006

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Methods for preserving strained semiconductor substrate layers during CMOS processing

by CURRIE MATTHEW T, LOCHTEFELD ANTHONY J
Year of Publication 04.07.2006

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Methods for preserving strained semiconductor substrate layers during CMOS processing

by Currie, Matthew T, Lochtefeld, Anthony J
Year of Publication 04.07.2006

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DEFECT REDUCTION USING ASPECT RATIO TRAPPING

by LOCHTEFELD, ANTHONY, J, PARK, JI-SOO, BAI, JIE
Year of Publication 27.05.2009

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Shallow trench isolation process

by CURRIE MATHEW T.,LOCHTEFELD ANTHONY J
Year of Publication 17.05.2006

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METHODS FOR FORMING SEMICONDUCTOR DEVICE STRUCTURES

by LANGDO THOMAS A, LOCHTEFELD ANTHONY J, HAMMOND RICHARD, CURRIE MATTHEW T, FITZGERALD EUGENE A
Year of Publication 29.12.2011

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III-V semiconductor device structures

by Langdo, Thomas A, Currie, Matthew T, Hammond, Richard, Lochtefeld, Anthony J, Fitzgerald, Eugene A
Year of Publication 27.09.2011

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III-V semiconductor device structures

by LANGDO THOMAS A, CURRIE MATTHEW T, HAMMOND RICHARD, LOCHTEFELD ANTHONY J, FITZGERALD EUGENE A
Year of Publication 27.09.2011

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SHALLOW TRENCH ISOLATION PROCESS

by CURRIE MATHEW T, LOCHTEFELD ANTHONY J
Year of Publication 08.12.2005

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SHALLOW TRENCH ISOLATION PROCESS

by LOCHTEFELD, ANTHONY, J, CURRIE, MATTHEW, T
Year of Publication 07.12.2005

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METHODS FOR PRESERVING STRAINED SEMICONDUCTOR LAYERS DURING OXIDE LAYER FORMATION

by LOCHTEFELD, ANTHONY, J, CURRIE, MATTHEW, T
Year of Publication 09.11.2005

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