Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN
Zajac, Marcin, Kaminski, Paweł, Kozlowski, Roman, Litwin-Staszewska, Elzbieta, Piotrzkowski, Ryszard, Grabianska, Karolina, Kucharski, Robert, Jakiela, Rafal
Published in Materials (01.03.2024)
Published in Materials (01.03.2024)
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Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds
Iwinska, Malgorzata, Piotrzkowski, Ryszard, Litwin-Staszewska, Elzbieta, Sochacki, Tomasz, Amilusik, Mikolaj, Fijalkowski, Michal, Lucznik, Boleslaw, Bockowski, Michal
Published in Applied physics express (01.01.2017)
Published in Applied physics express (01.01.2017)
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Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
Schiavon, Dario, Litwin-Staszewska, Elżbieta, Jakieła, Rafał, Grzanka, Szymon, Perlin, Piotr
Published in Materials (13.01.2021)
Published in Materials (13.01.2021)
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Iron and manganese as dopants used in the crystallization of highly resistive HVPE-GaN on native seeds
Iwinska, Malgorzata, Zajac, Marcin, Lucznik, Boleslaw, Fijalkowski, Michal, Amilusik, Mikolaj, Sochacki, Tomasz, Litwin-Staszewska, Elzbieta, Piotrzkowski, Ryszard, Grzegory, Izabella, Bockowski, Michal
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Negative Magnetoresistivity in Highly Doped n-Type GaN
Konczewicz, Leszek, Iwinska, Malgorzata, Litwin-Staszewska, Elzbieta, Zajac, Marcin, Turski, Henryk, Bockowski, Michal, Schiavon, Dario, Chlipała, Mikołaj, Juillaguet, Sandrine, Contreras, Sylvie
Published in Materials (11.10.2022)
Published in Materials (11.10.2022)
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Journal Article
Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds
Sochacki, Tomasz, Amilusik, Mikolaj, Lucznik, Boleslaw, Fijalkowski, Michal, Weyher, Janusz Ludwik, Sadovyi, Bohdan, Kamler, Grzegorz, Nowak, Grzegorz, Litwin-Staszewska, Elzbieta, Khachapuridze, Aleksander, Grzegory, Izabella, Kucharski, Robert, Zajac, Marcin, Doradzinski, Roman, Bockowski, Michal
Published in Japanese Journal of Applied Physics (01.05.2014)
Published in Japanese Journal of Applied Physics (01.05.2014)
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Ni–Au contacts to p-type GaN – Structure and properties
Smalc-Koziorowska, Julita, Grzanka, Szymon, Litwin-Staszewska, Elżbieta, Piotrzkowski, Ryszard, Nowak, Grzegorz, Leszczynski, Michał, Perlin, Piotr, Talik, Ewa, Kozubowski, Jan, Krukowski, Stanisław
Published in Solid-state electronics (01.07.2010)
Published in Solid-state electronics (01.07.2010)
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Journal Article
Nitride-based quantum structures and devices on modified GaN substrates
Perlin, Piotr, Franssen, Gijs, Szeszko, Justyna, Czernecki, R., Targowski, Grzegorz, Kryśko, Marcin, Grzanka, Szymon, Nowak, Grzegorz, Litwin-Staszewska, Elżbieta, Piotrzkowski, Ryszard, Leszczyński, Mike, Łucznik, Bolek, Grzegory, Izabella, Jakieła, Rafał, Albrecht, Martin, Suski, Tadek
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
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Journal Article
Conference Proceeding
Electrical transport phenomena in magnesium-doped p-type GaN
Konczewicz, Leszek, Litwin-Staszewska, Elżbieta, Contreras, Sylvie, Piotrzkowski, Ryszard, Dmowski, Lesław
Published in Physica Status Solidi (b) (01.03.2009)
Published in Physica Status Solidi (b) (01.03.2009)
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Journal Article
Conference Proceeding
Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths
Cywiński, Grzegorz, Kudrawiec, Robert, Rzodkiewicz, Witold, Kryśko, Marcin, Litwin-Staszewska, Elżbieta, Łucznik, Bolesław, Misiewicz, Jan, Skierbiszewski, Czesław
Published in Applied physics express (01.11.2009)
Published in Applied physics express (01.11.2009)
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Semiconductor Pressure Sensors as Seen by a Physicist
Trzeciakowski, Witold, Litwin-Staszewska, Elżbieta, Perlin, Piotr
Published in Japanese Journal of Applied Physics (01.01.1993)
Published in Japanese Journal of Applied Physics (01.01.1993)
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Journal Article
Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process
Konczewicz, Leszek, Juillaguet, Sandrine, Zajac, Marcin, Litwin-Staszewska, Elzbieta, Al Khalfioui, Mohamed, Leroux, Mathieu, Damilano, Benjamin, Brault, Julien, Contreras, Sylvie
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
Published in Physica status solidi. A, Applications and materials science (01.08.2023)
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Journal Article
Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration
Grzegory, I., Boćkowski, M., łucznik, B., Weyher, J., Litwin-Staszewska, E., Konczewicz, L., Sadovyi, B., Nowakowski, P., Porowski, S.
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Journal Article
Conference Proceeding
Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy
Leszczynski, Mike, Prystawko, Pawel, Plesiewicz, Jerzy, Dmowski, Leslaw, Litwin-Staszewska, Elzbieta, Grzanka, Szymon, Grzanka, Ewa, Roccaforte, Fabrizio
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy
Leszczynski, Mike, Prystawko, Pawel, Plesiewicz, Jerzy, Dmowski, Leslaw, Litwin-Staszewska, Elzbieta, Grzanka, S., Grzanka, E., Roccaforte, Fabrizio
Published in Meeting abstracts (Electrochemical Society) (04.06.2012)
Published in Meeting abstracts (Electrochemical Society) (04.06.2012)
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METHOD OF MANUFACTURING OF MAGNESIUM DOPED InxAlyGa1-x-yN EPITAXIAL LAYER OF p-TYPE CONDUCTIVITY AND MANUFACTURING OF MULTILAYER SEMICONDUCTOR STRUCTURES COMPRISING SUCH LAYER
SUSKI, TADEUSZ, DMOWSKI, LESLAW, LUCZNIK, BOLESLAW, POROWSKI, SYLWESTER, LESZCZYNSKI, MICHAL, LITWIN-STASZEWSKA, ELZBIETA, KRYSKO, MARCIN, PERLIN, PIOTR, CZERNECKI, ROBERT, GRZANKA, SZYMON, PRYSTAWKO, PAWEL, GRZEGORY, IZABELLA, PIOTRZKOWSKI, RYSZARD
Year of Publication 19.11.2009
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Year of Publication 19.11.2009
Patent
HERSTELLUNGSVERFAHREN FÜR P- UND N-LEITENDE STICKSTOFFHALTIGE AIII-BV-HALBLEITERVERBINDUNGEN
SUSKI, TADEUSZ, TEISSEYRE, HENRYK, POROWSKI, SYLWESTER, LESZCZYNSKI, MICHAL, GRZEGORY, IZABELLA, SKIERBISZEWSKI, CZESLAW, LITWIN-STASZEWSKA, ELZBIETA, BARANOWSKI, JACEK, JUN, JAN
Year of Publication 15.03.2004
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Year of Publication 15.03.2004
Patent
THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES AIII-BV OF p- AND n-TYPE ELECTRIC CONDUCTIVITY
SUSKI, TADEUSZ, TEISSEYRE, HENRYK, POROWSKI, SYLWESTER, LESZCZYNSKI, MICHAL, GRZEGORY, IZABELLA, SKIERBISZEWSKI, CZESLAW, LITWIN-STASZEWSKA, ELZBIETA, BARANOWSKI, JACEK, JUN, JAN
Year of Publication 18.02.2004
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Year of Publication 18.02.2004
Patent
METHOD OF OBTAINING SEMICONDUCTIVE COMPOUNDS OF A3-B5 GROUP AND ELECTRIC CONDUCTIVITY OF P AND N TYPE
LITWIN-STASZEWSKA ELZBIETA, LESZCZYNSKI MICHAL, TEISSEYRE HENRYK, GRZEGORY IZABELLA, JUN JAN, SKERBISZEWSKI CZESLAW, SUSKI TADEUSZ, POROWSKI SYLWESTER, BARANOWSKI JACEK
Year of Publication 28.06.2002
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Year of Publication 28.06.2002
Patent
Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity
SKIERBISZEWSKI CZESLAW, LITWIN-STASZEWSKA ELZBIETA, LESZCZYNSKI MICHAL, TEISSEYRE HENRYK, GRZEGORY IZABELLA, JUN JAN, SUSKI TADEUSZ, POROWSKI SYLWESTER, BARANOWSKI JACEK
Year of Publication 11.12.2001
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Year of Publication 11.12.2001
Patent