Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations
Connors, Elliot J, Nelson, J, Edge, Lisa F, Nichol, John M
Published in Nature communications (17.02.2022)
Published in Nature communications (17.02.2022)
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Journal Article
Coherent spin–valley oscillations in silicon
Cai, Xinxin, Connors, Elliot J., Edge, Lisa F., Nichol, John M.
Published in Nature physics (01.03.2023)
Published in Nature physics (01.03.2023)
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Journal Article
Two-axis quantum control of a fast valley qubit in silicon
Penthorn, Nicholas E., Schoenfield, Joshua S., Rooney, John D., Edge, Lisa F., Jiang, HongWen
Published in npj quantum information (06.11.2019)
Published in npj quantum information (06.11.2019)
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Journal Article
Considerations and Challenges with Characterizing Si/SiGe Interfaces
Dyck, Ondrej, Leonard, Donovan, Poplawsky, Jonathan, Pritchett, Emily, Kiselev, Andrey A., Jackson, Clayton A., Edge, Lisa F.
Published in Microscopy and microanalysis (01.07.2016)
Published in Microscopy and microanalysis (01.07.2016)
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Journal Article
Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs
Khakifirooz, Ali, Kangguo Cheng, Loubet, Nicolas, Nagumo, Toshiharu, Reznicek, Alexander, Qing Liu, Levin, Theodore M., Edge, Lisa F., Hong He, Kuss, James, Allibert, Frederic, Bich-Yen Nguyen, Doris, Bruce, Shahidi, Ghavam
Published in IEEE electron device letters (01.11.2013)
Published in IEEE electron device letters (01.11.2013)
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Journal Article
Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. Mater. Interfaces 21/2017)
Dyck, Ondrej, Leonard, Donovan N., Edge, Lisa F., Jackson, Clayton A., Pritchett, Emily J., Deelman, Peter W., Poplawsky, Jonathan D.
Published in Advanced materials interfaces (01.11.2017)
Published in Advanced materials interfaces (01.11.2017)
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Journal Article
Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks
Iijima, R, Edge, L F, Paruchuri, V, Takayanagi, M
Published in IEEE transactions on electron devices (01.11.2010)
Published in IEEE transactions on electron devices (01.11.2010)
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Journal Article
Quantification of Atomic Arrangements at Heterostructure Interfaces
Leonard, Donovan N., Dyck, Ondrej, Poplawsky, Jonathan D., More, Karren L., Edge, Lisa F., Jackson, Clayton A., Pritchett, Emily J., Deelman, Peter W.
Published in Microscopy and microanalysis (01.07.2016)
Published in Microscopy and microanalysis (01.07.2016)
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Journal Article
Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal--Oxide--Semiconductor Field-Effect Transistors with High-$k$ Gate Dielectrics
Iijima, Ryosuke, Edge, Lisa F, Paruchuri, Vamsi, Takayanagi, Mariko
Published in Japanese Journal of Applied Physics (01.04.2012)
Published in Japanese Journal of Applied Physics (01.04.2012)
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Journal Article
Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-$k$/Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors
Iijima, Ryosuke, Edge, Lisa F, Bruley, John, Paruchuri, Vamsi, Takayanagi, Mariko
Published in Japanese Journal of Applied Physics (01.06.2011)
Published in Japanese Journal of Applied Physics (01.06.2011)
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Journal Article
Characteristics of La2O3- and Al2O3-Capped HfO2 Dielectric Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on (110)-Oriented Silicon Substrates
Iijima, Ryosuke, Edge, Lisa F, Bruley, John, Paruchuri, Vamsi, Takayanagi, Mariko
Published in Jpn J Appl Phys (01.05.2011)
Published in Jpn J Appl Phys (01.05.2011)
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Journal Article
Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High- k /Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors
Iijima, Ryosuke, Edge, Lisa F., Bruley, John, Paruchuri, Vamsi, Takayanagi, Mariko
Published in Japanese Journal of Applied Physics (01.06.2011)
Published in Japanese Journal of Applied Physics (01.06.2011)
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Journal Article
High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes
Clark, Robert D., Consiglio, Steve, Wajda, Cory, Leusink, Gert, Sugawara, Takuya, Nakabayashi, Hajime, Jagannathan, Hemanth, Edge, Lisa F., Jamison, Paul, Paruchuri, Vamsi, Iijima, Ryosuke, Takayanagi, Mariko, Linder, Barry, Bruley, J, Copel, Matt, Narayanan, Vijay
Published in ECS transactions (03.10.2008)
Published in ECS transactions (03.10.2008)
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Journal Article
Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal–Oxide–Semiconductor Field-Effect Transistors with High- k Gate Dielectrics
Iijima, Ryosuke, Edge, Lisa F., Paruchuri, Vamsi, Takayanagi, Mariko
Published in Japanese Journal of Applied Physics (01.04.2012)
Published in Japanese Journal of Applied Physics (01.04.2012)
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Journal Article
High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension
Khakifirooz, Ali, Kangguo Cheng, Jin Cai, Kimball, Anne, Kulkarni, Pranita, Reznicek, Alexander, Adam, Thomas, Edge, Lisa, Huiming Bu, Doris, Bruce, Shahidi, Ghavam
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Journal Article
Gate Capacitance Reduction Due to the Inversion Layer in High- [Formula Omitted]/Metal Gate Stacks Within a Subnanometer EOT Regime
Iijima, Ryosuke, Edge, Lisa F, Ariyoshi, Keiko, Bruley, John, Paruchuri, Vamsi, Takayanagi, Mariko
Published in IEEE transactions on electron devices (01.04.2011)
Published in IEEE transactions on electron devices (01.04.2011)
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