A study of the vertical homogeneity of trace gases in East Asian continental outflow
Chang, Chih-Yuan, Wang, Jia-Lin, Chen, Yen-Chen, Pan, Xiang-Xu, Chen, Wei-Nai, Lin, Ming-Ren, Ho, Yu-Jui, Chuang, Ming-Tung, Liu, Wen-Tzu, Chang, Chih-Chung
Published in Chemosphere (Oxford) (01.06.2022)
Published in Chemosphere (Oxford) (01.06.2022)
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Journal Article
Band offset induced threshold variation in strained-Si nMOSFETs
Jung-Suk Goo, Qi Xiang, Takamura, Y., Arasnia, F., Paton, E.N., Besser, P., Pan, J., Ming-Ren Lin
Published in IEEE electron device letters (01.09.2003)
Published in IEEE electron device letters (01.09.2003)
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Journal Article
Scalability of strained-Si nMOSFETs down to 25 nm gate length
Jung-Suk Goo, Qi Xiang, Takamura, Y., Haihong Wang, Pan, J., Arasnia, F., Paton, E.N., Besser, P., Sidorov, M.V., Adem, E., Lochtefeld, A., Braithwaite, G., Currie, M.T., Hammond, R., Bulsara, M.T., Ming-Ren Lin
Published in IEEE electron device letters (01.05.2003)
Published in IEEE electron device letters (01.05.2003)
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Journal Article
Investigation of Two Species of Huang-qi (Aatragalusmembranaceus and Hedysarum polybotrys) by HPLC, ITS,Microscopic Morphology and Antioxidant Activities
LEE, I-JUNG, HUANG, PIN-CHIEH, ZHANG, LI-JIE, LIAW, CHIA-CHING, LIN, MING-REN
Published in Yàowu shi͡p︡in fenxi (01.09.2012)
Published in Yàowu shi͡p︡in fenxi (01.09.2012)
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Journal Article
Novel Approach to Reduce Source/Drain Series and Contact Resistance in High-Performance UTSOI CMOS Devices Using Selective Electrodeless CoWP or CoB Process
Pan, J., Topol, A., Shao, I., Chun-Yung Sung, Iacoponi, J., Ming-Ren Lin
Published in IEEE electron device letters (01.08.2007)
Published in IEEE electron device letters (01.08.2007)
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Journal Article
Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode
Pan, J., Woo, C., Chih-Yuh Yang, Bhandary, U., Guggilla, S., Krishna, N., Hua Chung, Hui, A., Bin Yu, Qi Xiang, Ming-Ren Lin
Published in IEEE electron device letters (01.05.2003)
Published in IEEE electron device letters (01.05.2003)
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Journal Article
Manufacturability of 20-nm ultrathin body fully depleted SOI devices with FUSI metal gates
Krivokapic, Z., Maszara, W.P., Ming-Ren Lin
Published in IEEE transactions on semiconductor manufacturing (01.02.2005)
Published in IEEE transactions on semiconductor manufacturing (01.02.2005)
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Journal Article
The effect of annealing temperatures on self-aligned replacement (damascene) TaCN-TaN-stacked gate pMOSFETs
Pan, J., Woo, C., Ngo, M.-V., Xie, J., Matsumoto, D., Murthy, D., Jung-Suk Goo, Qi Xiang, Ming-Ren Lin
Published in IEEE transactions on electron devices (01.04.2004)
Published in IEEE transactions on electron devices (01.04.2004)
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Journal Article
A low-temperature metal-doping technique for engineering the gate electrode of replacement metal gate CMOS transistors
Pan, J., Woo, C., Ngo, M.V., Besser, P., Pellerin, J., Qi Xiang, Ming-Ren Lin
Published in IEEE electron device letters (01.09.2003)
Published in IEEE electron device letters (01.09.2003)
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Journal Article
CVD rhenium and PVD tantalum gate MOSFETs fabricated with a replacement technique
Pan, J., Canaperi, D., Jammy, R., Steen, M., Pellerin, J., Ming-Ren Lin
Published in IEEE electron device letters (01.12.2004)
Published in IEEE electron device letters (01.12.2004)
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Journal Article
Self-aligned nickel, cobalt/tantalum nitride stacked-gate pMOSFETs fabricated with a low temperature process after metal electrode deposition
Pan, J., Woo, C., Ngo, M.-V., Chih-Yuh Yang, Besser, P., King, P., Bernard, J., Adem, E., Tracy, B., Pellerin, J., Qi Xiang, Ming-Ren Lin
Published in IEEE transactions on electron devices (01.12.2003)
Published in IEEE transactions on electron devices (01.12.2003)
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Journal Article
Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices
Gupta, A., Peng Fang, Song, M., Ming-Ren Lin, Wollesen, D., Chen, K., Hu, C.
Published in IEEE electron device letters (01.12.1997)
Published in IEEE electron device letters (01.12.1997)
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Journal Article
Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides
Yider Wu, Qi Xiang, Bang, D., Lucovsky, G., Ming-Ren Lin
Published in IEEE electron device letters (01.06.1999)
Published in IEEE electron device letters (01.06.1999)
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Journal Article
Thermal effects and instability in unipolar resistive switching devices
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Conference Proceeding
Correlation of Id- and Ig-random telegraph noise to positive bias temperature instability in scaled high-κ/metal gate n-type MOSFETs
Chia-Yu Chen, Qiushi Ran, Hyun-Jin Cho, Kerber, Andreas, Yang Liu, Ming-Ren Lin, Dutton, Robert W
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding