Investigation of aluminum film properties and microstructure for replacement metal gate application
Huang, R.P., Tsai, T.C., Lin, Welch, Huang, H.F., Tsai, M.C., Hsu, H.K., Hsu, C.M., Lin, J.F., Yang, C.L., Wu, J.Y.
Published in Microelectronic engineering (01.06.2013)
Published in Microelectronic engineering (01.06.2013)
Get full text
Journal Article
Conference Proceeding
CMP process development for the via-middle 3D TSV applications at 28nm technology node
Tsai, T.C., Tsao, W.C., Lin, Welch, Hsu, C.L., Lin, C.L., Hsu, C.M., Lin, J.F., Huang, C.C., Wu, J.Y.
Published in Microelectronic engineering (01.04.2012)
Published in Microelectronic engineering (01.04.2012)
Get full text
Journal Article
Defect reduction of replacement metal gate aluminum chemical mechanical planarization at 28nm technology node
Hsu, H.K., Tsai, T.C., Hsu, C.W., Lin, Welch, Huang, R.P., Yang, C.L., Wu, J.Y.
Published in Microelectronic engineering (01.12.2013)
Published in Microelectronic engineering (01.12.2013)
Get full text
Journal Article
CMP process development for the via-middle 3D TSV applications at 28 nm technology node
TSAI, T. C, TSAO, W. C, LIN, Welch, HSU, C. L, LIN, C. L, HSU, C. M, LIN, J. F, HUANG, C. C, WU, J. Y
Published in Microelectronic engineering (01.04.2012)
Published in Microelectronic engineering (01.04.2012)
Get full text
Conference Proceeding
Journal Article
Defect reduction of replacement metal gate aluminum chemical mechanical planarization at 28 nm technology node
HSU, H. K, TSAI, T. C, HSU, C. W, LIN, Welch, HUANG, R. P, YANG, C. L, WU, J. Y
Published in Microelectronic engineering (01.12.2013)
Published in Microelectronic engineering (01.12.2013)
Get full text
Journal Article
Process development of high-k metal gate aluminum CMP at 28nm technology node
Hsien, Y.H., Hsu, H.K., Tsai, T.C., Lin, Welch, Huang, R.P., Chen, C.H., Yang, C.L., Wu, J.Y.
Published in Microelectronic engineering (01.04.2012)
Published in Microelectronic engineering (01.04.2012)
Get full text
Journal Article
Process development of high-k metal gate aluminum CMP at 28 nm technology node
HSIEN, Y. H, HSU, H. K, TSAI, T. C, LIN, Welch, HUANG, R. P, CHEN, C. H, YANG, C. L, WU, J. Y
Published in Microelectronic engineering (01.04.2012)
Published in Microelectronic engineering (01.04.2012)
Get full text
Conference Proceeding
Journal Article
The TDDB Study of Post-CMP Cleaning Effect for L40 Direct Polished Porous Low K Dielectrics Cu Interconnect
Hsu, Chia-Lin, Lin, Welch, Hsu, Chun-Wei, Lin, Jen-Chieh, Tsai, Teng-Chun, Huang, Chien-Chung, Wu, J. Y., Perng, Dung-Ching
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
Get full text
Journal Article
Advanced Rework Process Development for Cu-CMP at 28 nm Technology Node
Lin, Jen-Chieh, Tsai, Teng-Chun, Hsu, Chia-Lin, Lin, Welch, Huang, Chien-Chung, Chen, Chih-Hsien, Wu, J. Y.
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
Get full text
Journal Article
Development of a Production Worthy Non-Selective Slurry W-CMP for Logic Applications at 28nm Technology Node and Beyond
Hsu, Single, Hsieh, Duckblood, Chen, Jora, Lin, Welch, Tsai, Teng-Chun, Wu, J.Y.
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
Get full text
Journal Article
Advanced Rework Process Development for Cu-CMP at 28 nm Technology Node
Lin, Jen-Chieh, Chen, Chih-Hsien, Hsu, Chia-Lin, Lin, Welch, Tsai, Teng-Chun, Huang, Chien-Chung, Wu, J. Y.
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
Get full text
Journal Article
The TDDB Study Of Post-CMP Cleaning Effect for L40 Direct Polished Porous Low K Dielectrics Cu Interconnect
Hsu, Chia-Lin, Lin, Welch, Hsu, Chun-Wei, Tsai, Teng-Chun, Huang, Chien-Chung, Wu, J. Y., Perng, Dung-Ching
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
Published in Meeting abstracts (Electrochemical Society) (08.07.2010)
Get full text
Journal Article
Micro-scratch reduction of replacement metal gate aluminum chemical mechanical polishing at 28nm technology node
Hsu, C. W., Huang, R. P., Lin, W., Huang, C. C., Hsieh, Y. L., Tsao, W. C., Chen, C. H., Lin, Y. M., Hung, T. H., Hsu, H. K., Wang, C. H., Wu, J. Y.
Published in 2012 IEEE International Interconnect Technology Conference (01.06.2012)
Published in 2012 IEEE International Interconnect Technology Conference (01.06.2012)
Get full text
Conference Proceeding
Evaluation of aluminum film properties and microstructure for replacement metal gate application at 28nm technology node
Huang, R. P., Hsien, Y. H., Tsai, T. C., Lin, W., Huang, H. F., Hsu, C. M., Tsai, M. C., Lin, K. H., Hsu, H. K., Lin, J. F., Yang, C. L., Wu, J. Y.
Published in 2011 IEEE International Interconnect Technology Conference (01.05.2011)
Published in 2011 IEEE International Interconnect Technology Conference (01.05.2011)
Get full text
Conference Proceeding