FAM20C directly binds to and phosphorylates Periostin
Lin, Ju-Hsien, Lin, I-Ping, Ohyama, Yoshio, Mochida, Hanna, Kudo, Akira, Kaku, Masaru, Mochida, Yoshiyuki
Published in Scientific reports (13.10.2020)
Published in Scientific reports (13.10.2020)
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Journal Article
FAM20A binds to and regulates FAM20C localization
Ohyama, Yoshio, Lin, Ju-Hsien, Govitvattana, Nattanan, Lin, I-Ping, Venkitapathi, Sundharamani, Alamoudi, Ahmed, Husein, Dina, An, Chunying, Hotta, Hak, Kaku, Masaru, Mochida, Yoshiyuki
Published in Scientific reports (13.06.2016)
Published in Scientific reports (13.06.2016)
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Journal Article
Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications
Matsushita, Keiichi, Chan, Chih-Yuan, Lin, Ju-Hsien, Peng, Sheng-Wen, Lo, Hung-Kuan, Lin, Yu-Syuan, Lin, Cheng-Kuo
Published in 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (16.10.2022)
Published in 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (16.10.2022)
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Conference Proceeding
Semiconductor structure
Shao, Yao-Ting, Lin, Hsi-Tsung, Tsai, Shu-Hsiao, Hsieh, Chen-An, Lin, Ju-Hsien, Chen, Yi-Han, Chung, Jung-Tao
Year of Publication 23.04.2024
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Year of Publication 23.04.2024
Patent
SEMICONDUCTOR STRUCTURE
HSIEH, Chen-An, LIN, Ju-Hsien, SHAO, Yao-Ting, CHEN, Yi-Han, CHUNG, Jung-Tao, LIN, Hsi-Tsung, TSAI, Shu-Hsiao
Year of Publication 07.09.2023
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Year of Publication 07.09.2023
Patent
Semiconductor structure
Shao, Yao-Ting, Lin, Hsi-Tsung, Tsai, Shu-Hsiao, Hsieh, Chen-An, Lin, Ju-Hsien, Chen, Yi-Han, Chung, Jung-Tao
Year of Publication 04.07.2023
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Year of Publication 04.07.2023
Patent
Gate-sinking pHEMTs having extremely uniform pinch-off/threshold voltage
Lin, Yan-Cheng, Wang, Yu-Chi, Hua, Chang-Hwang, Lin, Ju-Hsien, Chang, Chia-Ming, Chung, Jung-Tao
Year of Publication 16.11.2021
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Year of Publication 16.11.2021
Patent
SEMICONDUCTOR STRUCTURE
HSIEH, Chen-An, LIN, Ju-Hsien, SHAO, Yao-Ting, CHEN, Yi-Han, CHUNG, Jung-Tao, LIN, Hsi-Tsung, TSAI, Shu-Hsiao
Year of Publication 14.07.2022
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Year of Publication 14.07.2022
Patent
GATE-SINKING PHEMTS HAVING EXTREMELY UNIFORM PINCH-OFF/THRESHOLD VOLTAGE
LIN, Ju-Hsien, WANG, Yu-Chi, HUA, Chang-Hwang, CHUNG, Jung-Tao, CHANG, Chia-Ming, LIN, Yan-Cheng
Year of Publication 24.12.2020
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Year of Publication 24.12.2020
Patent
GATE-SINKING PHEMTS HAVING EXTREMELY UNIFORM PINCH-OFF/THRESHOLD VOLTAGE
LIN, Ju-Hsien, WANG, Yu-Chi, HUA, Chang-Hwang, CHUNG, Jung-Tao, CHANG, Chia-Ming, LIN, Yan-Cheng
Year of Publication 23.12.2020
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Year of Publication 23.12.2020
Patent
Semiconductor structure
CHEN, YI-HAN, LIN, JU-HSIEN, LIN, HSI-TSUNG, TSAI, SHU-HSIAO, SHAO, YAO-TING, HSIEH, CHEN-AN, CHUNG, JUNG-TAO
Year of Publication 11.12.2023
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Year of Publication 11.12.2023
Patent
Semiconductor structure
CHEN, YI-HAN, LIN, JU-HSIEN, LIN, HSI-TSUNG, TSAI, SHU-HSIAO, SHAO, YAO-TING, HSIEH, CHEN-AN, CHUNG, JUNG-TAO
Year of Publication 01.12.2023
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Year of Publication 01.12.2023
Patent
Semiconductor structure
CHEN, YI-HAN, LIN, JU-HSIEN, LIN, HSI-TSUNG, TSAI, SHU-HSIAO, SHAO, YAO-TING, HSIEH, CHEN-AN, CHUNG, JUNG-TAO
Year of Publication 21.08.2023
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Year of Publication 21.08.2023
Patent
Semiconductor structure
CHEN, YI-HAN, LIN, JU-HSIEN, LIN, HSI-TSUNG, TSAI, SHU-HSIAO, SHAO, YAO-TING, HSIEH, CHEN-AN, CHUNG, JUNG-TAO
Year of Publication 01.11.2022
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Year of Publication 01.11.2022
Patent
Gate-sinking phemts having extremely uniform pinch-off/threshold voltage
HUA, CHANG-HWANG, LIN, JU-HSIEN, LIN, YANNG, WANG, YUI, CHANG, CHIA-MING, CHUNG, JUNG-TAO
Year of Publication 01.04.2021
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Year of Publication 01.04.2021
Patent
GATE-SINKING PHEMTS HAVING EXTREMELY UNIFORM PINCH-OFF/THRESHOLD VOLTAGE
LIN, JU HSIEN, WANG, YU CHI, HUA, CHANG HWANG, CHUNG, JUNG TAO, CHANG, CHIA MING, LIN, YAN CHENG
Year of Publication 11.11.2021
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Year of Publication 11.11.2021
Patent