A 16 nm 128 Mb SRAM in High- \kappa Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications
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Published in IEEE journal of solid-state circuits (01.01.2015)
Published in IEEE journal of solid-state circuits (01.01.2015)
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Leakage scaling in deep submicron CMOS for SoC
Yo-Sheng Lin, Chung-Cheng Wu, Chih-Sheng Chang, Rong-Ping Yang, Wei-Ming Chen, Jhon-Jhy Liaw, Diaz, C.H.
Published in IEEE transactions on electron devices (01.06.2002)
Published in IEEE transactions on electron devices (01.06.2002)
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Journal Article
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications
Osada, Yoshiaki, Nakazato, Takaaki, Nii, Koji, Liaw, Jhon-Jhy, Wu, Shien-Yang Michael, Li, Quincy, Fujiwara, Hidehiro, Liao, Hung-Jen, Chang, Tsung-Yung Jonathan
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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