Impact of JFET width on conduction characteristic for p-channel SiC IGBT
Xu, Kunhui, Tian, Xiaoli, Wei, Wei, Wang, Xinhua, Bai, Yun, Yang, Chengyue, Tang, Yidan, Li, Chengzhan, Liu, Xinyu, Chen, Hong
Published in Solid-state electronics (01.06.2024)
Published in Solid-state electronics (01.06.2024)
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Journal Article
A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose Window
Deng, Xiaochuan, Li, Lijun, Wu, Jia, Li, Chengzhan, Chen, Wanjun, Li, Juntao, Li, Zhaoji, Zhang, Bo
Published in IEEE transactions on electron devices (01.12.2017)
Published in IEEE transactions on electron devices (01.12.2017)
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Journal Article
Analysis of Mobility for 4H-SiC N/P-Channel MOSFETs Up To 300 °C
Yang, Liao, Bai, Yun, Li, Chengzhan, Chen, Hong, Han, Zhonglin, Tang, Yidan, Hao, Jilong, Yang, Chengyue, Tian, Xiaoli, Lu, Jiang, Liu, Xinyu
Published in IEEE transactions on electron devices (01.08.2021)
Published in IEEE transactions on electron devices (01.08.2021)
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Journal Article
A Novel 4H–SiC/Si Heterojunction IGBT Achieving Low Turn–Off Loss
Wang, Erjun, Tian, Xiaoli, Lu, Jiang, Wang, Xinhua, Li, Chengzhan, Bai, Yun, Yang, Chengyue, Tang, Yidan, Liu, Xinyu
Published in Electronics (Basel) (01.06.2023)
Published in Electronics (Basel) (01.06.2023)
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Journal Article
Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs
Chen, Ximing, Li, Xuan, Wang, Yafei, Chen, Hong, Zhou, Caineng, Zhang, Chao, Li, Chengzhan, Deng, Xiaochuan, Wu, Yudong, Zang, Bo
Published in IEEE journal of the Electron Devices Society (2020)
Published in IEEE journal of the Electron Devices Society (2020)
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Journal Article
Multi-dimensional models of sic power mosfet for accurately predicting the characteristics
Shen Diao, Hong Chen, Yanhu Chen, Yun Bai, Chengyue Yang, Xinyu Liu, Chengzhan Li, Zhengdong Zhou
Published in CES transactions on electrical machines and systems (Online (01.09.2017)
Published in CES transactions on electrical machines and systems (Online (01.09.2017)
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Journal Article
Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs
Tingting, Yuan, Xinyu, Liu, Yingkui, Zheng, Chengzhan, Li, Ke, Wei, Guoguo, Liu
Published in Journal of semiconductors (01.12.2009)
Published in Journal of semiconductors (01.12.2009)
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Journal Article
Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs
Lu, Jiang, Liu, Jiawei, Tian, Xiaoli, Chen, Hong, Tang, Yidan, Bai, Yun, Li, Chengzhan, Liu, Xinyu
Published in IEEE transactions on electron devices (01.09.2020)
Published in IEEE transactions on electron devices (01.09.2020)
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Journal Article
Dynamic behavior analysis of a moving coil oil-free linear compressor in refrigeration system
Li, Chengzhan, Zou, Huiming, Cai, Jinghui, Jiang, Yuyan, Guo, Chaohong
Published in International journal of refrigeration (01.01.2022)
Published in International journal of refrigeration (01.01.2022)
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Journal Article
An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier
Li, Chengzhan (诚瞻 李), Chen, Zhijian (志坚 陈), Huang, Jiwei (继伟 黄), Wang, Yongping (永平 王), Ma, Chuanhui (传辉 马), Yang, Hanbing (寒冰 杨), Liao, Yinghao (英豪 廖), Zhou, Yong (勇周), Liu, Bin (斌刘)
Published in Journal of semiconductors (01.03.2011)
Published in Journal of semiconductors (01.03.2011)
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Journal Article
Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs
Qiu, Leshan, Bai, Yun, Ding, Jieqin, Hao, Jilong, Tang, Yidan, Yang, Chengyue, Tian, Xiaoli, Li, Chengzhan, Liu, Xinyu
Published in IEEE transactions on electron devices (01.04.2024)
Published in IEEE transactions on electron devices (01.04.2024)
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