Search Results - "LI, Shanjie" :: K.UTB vyhledávací portál

Loading…

HRD-YOLOX based insulator identification and defect detection method for transmission lines

by Li, Ying, Feng, Dongdong, Zhang, Qiang, Li, Shanjie
Published in IEEE access (01.01.2024)

Get full text

Journal Article

Loading…

Time-dependent characteristics and physical mechanisms of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under different bias conditions

by Li, Shanjie, He, Zhiyuan, Gao, Rui, Chen, Yiqiang, Liu, Yang, Zhu, Zhe
Published in Journal of physics. D, Applied physics (27.11.2019)

Get full text

Journal Article

Loading…

Memtransistors Based on Non-Layered In2S3 Two-Dimensional Thin Films With Optical-Modulated Multilevel Resistance States and Gate-Tunable Artificial Synaptic Plasticity

by Zhao, Yu, Yu, Daizhe, Liu, Zhen, Li, Shanjie, He, Zhiyuan
Published in IEEE access (2020)

Get full text

Journal Article

Loading…

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

by Wu, Nengtao, Xing, Zhiheng, Li, Shanjie, Luo, Ling, Zeng, Fanyi, Li, Guoqiang
Published in Semiconductor science and technology (01.06.2023)

Get full text

Journal Article

Loading…

Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH3 Plasma Pretreatment

by Wu, Nengtao, Luo, Ling, Xing, Zhiheng, Li, Shanjie, Zeng, Fanyi, Cao, Ben, Wu, Changtong, Li, Guoqiang
Published in IEEE transactions on electron devices (01.09.2023)

Get full text

Journal Article

Loading…

Fabrication and formation mechanisms of ohmic conducts with low annealing temperature for GaN/AlN superlattice barrier HEMTs

by Li, Shanjie, Wu, Changtong, Zeng, Fanyi, Wu, Nengtao, Luo, Ling, Cao, Ben, Wang, Wenliang, Li, Guoqiang
Published in Journal of physics. D, Applied physics (13.01.2025)

Get full text

Journal Article

Loading…

Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field

by Luo, Ling, Wu, Nengtao, Xing, Zhiheng, Li, Shanjie, Zeng, Fanyi, Cao, Ben, Wu, Changtong, Li, Guoqiang
Published in Journal of physics. D, Applied physics (18.10.2024)

Get full text

Journal Article

Loading…

Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

by Li, Shanjie, He, Zhiyuan, Gao, Rui, Chen, Yiqiang, Chen, Yuan, Liu, Chang, Huang, Yun, Li, Guoqiang
Published in IEEE transactions on electron devices (01.01.2021)

Get full text

Journal Article

Loading…

Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH 3 Plasma Pretreatment

by Wu, Nengtao, Luo, Ling, Xing, Zhiheng, Li, Shanjie, Zeng, Fanyi, Cao, Ben, Wu, Changtong, Li, Guoqiang
Published in IEEE transactions on electron devices (01.09.2023)

Get full text

Journal Article

Loading…

Analysis of the Game Behavior of Smart Community Regulatory Participants to Co-Create the Smart City: Post-Human Stakeholder Perspectives

by Wan, Lijun, Li, Shanjie, Yin, Shi
Published in Health & social care in the community (16.02.2023)

Get full text

Journal Article

Loading…

High On/Off Current Ratio and High Vth/Ron Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

by Li, Shanjie, Zeng, Fanyi, Xing, Zhiheng, Wu, Nengtao, Cao, Ben, Luo, Ling, Wu, Changtong, Wang, Wenliang, Li, Guoqiang
Published in IEEE transactions on electron devices (01.05.2024)

Get full text

Journal Article

Loading…

High On/Off Current Ratio and High V th / R on Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

by Li, Shanjie, Zeng, Fanyi, Xing, Zhiheng, Wu, Nengtao, Cao, Ben, Luo, Ling, Wu, Changtong, Wang, Wenliang, Li, Guoqiang
Published in IEEE transactions on electron devices (01.05.2024)

Get full text

Journal Article