Low Operating Voltage and Small Gain Slope of InGaAs APDs With p-Type Multiplication Layer
Ma, Ying-Jie, Zhang, Yong-Gang, Gu, Yi, Chen, Xing-You, Zhou, Li, Xi, Su-Ping, Li, Hao-Si-Bai-Yin
Published in IEEE photonics technology letters (15.03.2015)
Published in IEEE photonics technology letters (15.03.2015)
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Effects of compositional overshoot on InP-based InAlAs metamorphic graded buffer
FANG, Xiang, GU, YI, ZHANG, Yong-Gang, ZHOU, Li, WANG, Kai, LI, Hao-Si-Bai-Yin, LIU, Ke-Hui, CAO, Yuan-Ying
Published in Hong wai yu hao mi bo xue bao (01.12.2013)
Published in Hong wai yu hao mi bo xue bao (01.12.2013)
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Analysis and evaluation of uniformity of SWIR InGaAs FPA – Part II: Processing issues and overall effects
Li, Cheng, Zhang, Yong-gang, Gu, Yi, Wang, Kai, Fang, Xiang, Li, Xue, Li, Hao-si-bai-yin
Published in Infrared physics & technology (01.05.2013)
Published in Infrared physics & technology (01.05.2013)
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Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE: Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE
WANG, Kai, GU, Yi, FANG, Xiang, ZHOU, Li, LI, Cheng, LI, Hao-Si-Bai-Yin, ZHANG, Yong-Gang
Published in Hong wai yu hao mi bo xue bao (01.10.2012)
Published in Hong wai yu hao mi bo xue bao (01.10.2012)
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IMPROVING THE PERFORMANCE OF EXTENDED WAVELENGTH InGaAs PHOTODETECTORS BY USING DIGITAL GRADED HETEROINTERFACES SUPERLATTICE: IMPROVING THE PERFORMANCE OF EXTENDED WAVELENGTH InGaAs PHOTODETECTORS BY USING DIGITAL GRADED HETEROINTERFACES SUPERLATTICE
WANG, Kai, ZHANG, Yong-Gang, GU, Yi, LI, Cheng, LI, Hao-Si-Bai-Yin, LI, Yao-Yao
Published in Hong wai yu hao mi bo xue bao (01.12.2009)
Published in Hong wai yu hao mi bo xue bao (01.12.2009)
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Journal Article
Analysis and evaluation of uniformity of SWIR InGaAs FPA—Part I: Material issues
Gu, Yi, Zhang, Yong-gang, Li, Cheng, Wang, Kai, Li, Hao-si-bai-yin, Li, Xue, Fang, Xiang
Published in Infrared physics & technology (01.11.2011)
Published in Infrared physics & technology (01.11.2011)
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Wavelength extended InGaAs/InP photodetector structures with lattice mismatch up to 2.6
Gu, Yi, Li, Cheng, Wang, Kai, Li, Hao-Si-Bai-Yin, Li, Yao-Yao, Zhang, Yong-Gang
Published in Hong wai yu hao mi bo xue bao (01.04.2010)
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Published in Hong wai yu hao mi bo xue bao (01.04.2010)
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InAs/InGaAs digital alloy strain-compensated quantum well lasers
Cao, Yuan-Ying, Gu, Yi, Zhang, Yong-Gang, Li, Yao-Yao, Fang, Xiang, Li, Ai-Zhen, Zhou, Li, Li, Hao-Si-Bai-Yin
Published in Hong wai yu hao mi bo xue bao (01.06.2014)
Published in Hong wai yu hao mi bo xue bao (01.06.2014)
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Improved Performance of 2.2- \mu InAs/InGaAs QW Lasers on InP by Using Triangular Wells
Yuan-Ying Cao, Yong-Gang Zhang, Yi Gu, Xing-You Chen, Li Zhou, Li, Hao-Si-Bai-Yin
Published in IEEE photonics technology letters (15.03.2014)
Published in IEEE photonics technology letters (15.03.2014)
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