Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method
Hashimoto, Tadao, Letts, Edward R., Key, Daryl, Jordan, Benjamin
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
X-ray characterization technique for the assessment of surface damage in GaN wafers
Letts, Edward, Sun, Yimeng, Key, Daryl, Jordan, Benjamin, Hashimoto, Tadao
Published in Journal of crystal growth (01.11.2018)
Published in Journal of crystal growth (01.11.2018)
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Journal Article
Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production
Key, Daryl, Letts, Edward, Tsou, Chuan-Wei, Ji, Mi-Hee, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Dupuis, Russell, Hashimoto, Tadao
Published in Materials (14.06.2019)
Published in Materials (14.06.2019)
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Journal Article
Defect structure of a free standing GaN wafer grown by the ammonothermal method
Sintonen, Sakari, Suihkonen, Sami, Jussila, Henri, Lipsanen, Harri, Tuomi, Turkka O., Letts, Edward, Hoff, Sierra, Hashimoto, Tadao
Published in Journal of crystal growth (15.11.2014)
Published in Journal of crystal growth (15.11.2014)
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Journal Article
Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method
Nojima, Yoshihiro, Ikari, Masanori, Letts, Edward, Hashimoto, Tadao
Published in Journal of crystal growth (15.02.2011)
Published in Journal of crystal growth (15.02.2011)
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Journal Article
Effect of indium on the physical vapor transport growth of AlN
Letts, Edward R., Speck, James S., Nakamura, Shuji
Published in Journal of crystal growth (01.02.2009)
Published in Journal of crystal growth (01.02.2009)
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Journal Article
Phase selection of microcrystalline GaN synthesized in supercritical ammonia
Hashimoto, Tadao, Fujito, Kenji, Sharma, Rajat, Letts, Edward R., Fini, Paul T., Speck, James S., Nakamura, Shuji
Published in Journal of crystal growth (15.05.2006)
Published in Journal of crystal growth (15.05.2006)
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Journal Article
Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method
Hashimoto, Tadao, Key, Daryl, Letts, Edward, Gaddy, Mathew, Gregory, Austin, Dickens, James, West, Tim, Zhao, Wei, Guo, Mengzhe, Buyuklimanli, Temel
Published in Journal of crystal growth (01.11.2023)
Published in Journal of crystal growth (01.11.2023)
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Journal Article
X-ray characterization technique for the assessment of surface damage in GaN wafers
Letts, Edward, Sun, Yimeng, Key, Daryl, Jordan, Benjamin, Hashimoto, Tadao
Published in Journal of crystal growth (01.11.2018)
Published in Journal of crystal growth (01.11.2018)
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Journal Article
Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping
Xu, Zhiyu, Daeumer, Matthias A., Cho, Minkyu, Yoo, Jae-Hyuck, Detchprohm, Theeradetch, Bakhtiary-Noodeh, Marzieh, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Letts, Edward, Hashimoto, Tadao, Dupuis, Russell D., Shen, Shyh-Chiang
Published in Journal of applied physics (28.05.2024)
Published in Journal of applied physics (28.05.2024)
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Journal Article
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings
Cho, Minkyu, Xu, Zhiyu, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Daeumer, Matthias A., Yoo, Jae-Hyuck, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Hashimoto, Tadao, Letts, Edward, Dupuis, Russell D., Shen, Shyh-Chiang
Published in IEEE transactions on electron devices (01.09.2023)
Published in IEEE transactions on electron devices (01.09.2023)
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Journal Article
Development of GaN wafers via the ammonothermal method
Letts, Edward, Hashimoto, Tadao, Hoff, Sierra, Key, Daryl, Male, Keith, Michaels, Mathew
Published in Journal of crystal growth (01.10.2014)
Published in Journal of crystal growth (01.10.2014)
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Journal Article
Conference Proceeding
Development of GaN wafers for solid-state lighting via the ammonothermal method
Letts, Edward, Hashimoto, Tadao, Ikari, Masanori, Nojima, Yoshihiro
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Journal Article
Conference Proceeding
Improvement of crystal quality in ammonothermal growth of bulk GaN
Hashimoto, Tadao, Letts, Edward, Ikari, Masanori, Nojima, Yoshihiro
Published in Journal of crystal growth (01.09.2010)
Published in Journal of crystal growth (01.09.2010)
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Journal Article
Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production
Key, Daryl, Letts, Edward, Tsou, Chuan-Wei, Ji, Mi-Hee, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Dupuis, Russell, Hashimoto, Tadao
Published in Materials (01.06.2019)
Published in Materials (01.06.2019)
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Journal Article