Impact of thermal oxidation pressure and temperature on deactivation of the interfacial trap states in Al2O3/GaAs MOS capacitor
Lim, Hajin, Kim, Seongkyung, Kim, Joon Rae, Song, Ji Hun, Lee, Nae-In, Jeong, Jae Kyeong, Kim, Hyeong Joon
Published in Physica status solidi. A, Applications and materials science (01.09.2015)
Published in Physica status solidi. A, Applications and materials science (01.09.2015)
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Journal Article
Technology scaling on High-K & Metal-Gate FinFET BTI reliability
Kyong Taek Lee, Wonchang Kang, Eun-Ae Chung, Gunrae Kim, Hyewon Shim, Hyunwoo Lee, Hyejin Kim, Minhyeok Choe, Nae-In Lee, Patel, Anuj, Junekyun Park, Jongwoo Park
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
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Conference Proceeding
Development of thermal neutron SER-resilient high-k/metal gate technology
Jongwoo Park, Gunrae Kim, Ming Zhang, Kyungsik Park, Miji Lee, Ilgon Kim, Jongsun Bae, Sangwoo Pae, Jinwoo Choi, Dongsuk Shin, Nae-In Lee, Kee Sup Kim
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
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Conference Proceeding
Effect of Catalyst Layer Density and Growth Temperature in Rapid Atomic Layer Deposition of Silica Using Tris(tert-pentoxy)silanol
Won, Seok-Jun, Kim, Joon Rae, Suh, Sungin, Lee, Nae-In, Hwang, Cheol Seong, Kim, Hyeong Joon
Published in ACS applied materials & interfaces (25.05.2011)
Published in ACS applied materials & interfaces (25.05.2011)
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Journal Article
Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics
JUNG, Hyung-Suk, LEE, So-Ah, LEE, Nae-In, CHEOL SEONG HWANG, RHA, Sang-Ho, SANG YOUNG LEE, HYO KYEOM KIM, DO HYUN KIM, KYU HWAN OH, PARK, Jung-Min, KIM, Weon-Hong, SONG, Min-Woo
Published in IEEE transactions on electron devices (01.07.2011)
Published in IEEE transactions on electron devices (01.07.2011)
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Journal Article
Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant
Park, Hong Bae, Cho, Moonju, Park, Jaehoo, Lee, Suk Woo, Hwang, Cheol Seong, Kim, Jong-Pyo, Lee, Jong-Ho, Lee, Nae-In, Kang, Ho-Kyu, Lee, Jong-Cheol, Oh, Se-Jung
Published in Journal of applied physics (01.09.2003)
Published in Journal of applied physics (01.09.2003)
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Journal Article
Properties of Atomic Layer Deposited HfO 2 Films on Ge Substrates Depending on Process Temperatures
Jung, Hyung-Suk, Kim, Hyo Kyeom, Yu, Il-Hyuk, Lee, Sang Young, Lee, Joohwi, Park, Jinho, Jang, Jae Hyuck, Jeon, Sang-Ho, Chung, Yoon Jang, Cho, Deok-Yong, Lee, Nae-In, Park, Tae Joo, Choi, Jung-Hae, Hwang, Cheol Seong
Published in Journal of the Electrochemical Society (2012)
Published in Journal of the Electrochemical Society (2012)
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Journal Article
Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2
Jung, Hyung-Suk, Park, Tae Joo, Kim, Jeong Hwan, Lee, Sang Young, Lee, Joohwi, Oh, Him Chan, Na, Kwang Duck, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In, Hwang, Cheol Seong
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
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Conference Proceeding
A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell
Oh, Jung-Hoon, Chung, Hoon-Ju, Lee, Nae-In, Han, Chul-Hi
Published in IEEE electron device letters (01.06.2000)
Published in IEEE electron device letters (01.06.2000)
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Journal Article
Integration Friendly Dual Metal Gate Technology Using Dual Thickness Metal Inserted Poly-Si Stacks (DT-MIPS)
Hyung-Suk Jung, Sung Kee Han, Hajin Lim, Yun Ki Choi, Cheol-kyu Lee, Mong sub Lee, Young-sub You, Youngsu Chung, Jong-bong Park, Eun Ha Lee, Hion Suck Baik, Jong-Ho Lee, Nae-In Lee, Ho-Kyu Kang
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
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Conference Proceeding
The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge Substrate
Jung, Hyung-Suk, Jeon, Sang Ho, Kim, Hyo Kyeom, Yu, Il-Hyuk, Lee, Sang Young, Lee, Joohwi, Chung, Yoon Jang, Cho, Deok-Yong, Lee, Nae-In, Park, Tae Joo, Choi, Jung-Hae, Han, Seungwu, Hwang, Cheol Seong
Published in ECS journal of solid state science and technology (01.01.2012)
Published in ECS journal of solid state science and technology (01.01.2012)
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Journal Article
Reduction in the Interfacial Trap Density of Al2O3/GaAs Gate Stack by Adopting High Pressure Oxidation
Lim, Hajin, Kim, Seongkyung, Kim, Joon Rae, Suh, Sungin, Song, Ji Hun, Lee, Nae-In, Jeong, Jae Kyeong, Kim, Hyeong Joon
Published in ECS journal of solid state science and technology (01.01.2014)
Published in ECS journal of solid state science and technology (01.01.2014)
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Journal Article
Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma
Lee, Nae-In, Lee, Jin-Woo, Hur, Sung-Hoi, Kim, Hyoung-Sub, Han, Chul-Hi
Published in IEEE electron device letters (01.10.1997)
Published in IEEE electron device letters (01.10.1997)
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Journal Article
Turn-Around Effect of Vth Shift During the Positive Bias Temperature Instability of the n-Type Transistor With HfOxNy Gate Dielectrics
JUNG, Hyung-Suk, RHA, Sang-Ho, SONG, Min-Woo, LEE, Nae-In, HYO KYEOM KIM, JEONG HWAN KIM, WON, Seok-Jun, LEE, Joohwi, SANG YOUNG LEE, CHEOL SEONG HWANG, PARK, Jung-Min, KIM, Weon-Hong
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article
Impacts of Zr Composition in \hbox \hbox\hbox Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics
Jung, Hyung-Suk, Lee, So-Ah, Rha, Sang-ho, Lee, Sang Young, Kim, Hyo Kyeom, Kim, Do Hyun, Oh, Kyu Hwan, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In, Hwang, Cheol Seong
Published in IEEE transactions on electron devices (01.07.2011)
Published in IEEE transactions on electron devices (01.07.2011)
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Journal Article
Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics
Jung, Hyung-Suk, Rha, Sang-Ho, Kim, Hyo Kyeom, Kim, Jeong Hwan, Won, Seok-Jun, Lee, Joohwi, Lee, Sang Young, Hwang, Cheol Seong, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article