Search Results - "LEE KEY-MIN" :: K.UTB vyhledávací portál

Effects of hydrogen implantation on the structural and electrical properties of nickel silicide

by CHOI, Chel-Jong, OK, Young-Woo, HULLAVARAD, Shiva S, SEONG, Tae-Yeon, LEE, Key-Min, LEE, Joo-Hyoung, PARKH, Young-Jin
Published in Journal of the Electrochemical Society (01.09.2002)

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Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology

by Lee, Hi-Deok, Bae, Mi-Suk, Ji, Hee-Hwan, Lee, Key-Min, Park, Seong-Hyun, Jang, Myoung-Jun, Lee, Joo-Hyoung, Yoon, Ki-Seok, Choi, Jung-Hoon, Park, Geun-Suk, Kang, Keun-Koo, Park, Young-Jin
Published in Japanese Journal of Applied Physics (01.04.2002)

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Abnormal junction profile of silicided p+/n shallow junctions: a leakage mechanism

by Choi, Chel-Jong, Seong, Tae-Yeon, Lee, Key-Min, Lee, Joo-Hyoung, Park, Young-Jin, Lee, Hi-Deok
Published in IEEE electron device letters (01.04.2002)

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Abnormal Junction Profile of Submicrometer Complementary Metal Oxide Semiconductor Devices with Co Silicidation and Shallow Trench Isolation Processes

by Choi, Chel-Jong, Seong, Tae-Yeon, Lee, Key-Min, Lee, Joo-Hyoung, Park, Young-Jin, Lee, Hi-Deok
Published in Electrochemical and solid-state letters (01.11.2001)

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Abnormal junction profile of silicided p super(+)/n shallow junctions: a leakage mechanism

by Choi, Chel-Jong, Seong, Tae-Yeon, Lee, Key-Min, Lee, Joo-Hyoung, Park, Young-Jin, Lee, Hi-Deok
Published in IEEE electron device letters (01.04.2002)

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Abnormal junction profile of silicided p/sup +//n shallow junctions: a leakage mechanism

by Chel-Jong Choi, Tae-Yeon Seong, Key-Min Lee, Joo-Hyoung Lee, Young-Jin Park, Hi-Deok Lee
Published in IEEE electron device letters (01.04.2002)

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Abnormal junction profile of silicided p(+)/n shallowjunctions: a leakage mechanism

by Choi, Chel-Jong, Seong, Tae-Yeon, Lee, Key-Min, Lee, Joo-Hyoung, Park, Young-Jin, Lee, Hi-Deok
Published in IEEE electron device letters (01.04.2002)

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A study of stress-induced p/sup +//n salicided junction leakage failure and optimized process conditions for sub-0.15-/spl mu/m CMOS technology

by Joo-Hyoung Lee, Sung-Hyung Park, Key-Min Lee, Ki-Seok Youn, Young-Jin Park, Chel-Jong Choi, Tae-Yeon Seong, Hi-Deok Lee
Published in IEEE transactions on electron devices (01.11.2002)

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A study of stress-induced p/sup +//n salicided junction leakage failure and optimized process conditions for sub-0.15-μm CMOS technology

by Joo-Hyoung Lee, Sung-Hyung Park, Key-Min Lee, Ki-Seok Youn, Young-Jin Park, Chel-Jong Choi, Tae-Yeon Seong, Hi-Deok Lee
Published in IEEE transactions on electron devices (01.11.2002)

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A study of stress-induced p+/n salicided junction leakage failure and optimized process conditions for sub-0.15-[mu]m CMOS technology

by Lee, Joo-Hyoung, Park, Sung-Hyung, Lee, Key-Min, Youn, Ki-Seok, Park, Young-Jin, Choi, Chel-Jong, Seong, Tae-Yeon, Lee, Hi-Deok
Published in IEEE transactions on electron devices (01.11.2002)

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A study of stress-induced p/+//n salicided junction leakage failure and optimized process conditions for sub-0.15-mum CMOS technology

by Lee, Joo-Hyoung, Park, Sung-Hyung, Lee, Key-Min, Youn, Ki-Seok, Park, Young-Jin, Choi, Chel-Jong, Seong, Tae-Yeon, Lee, Hi-Deok
Published in IEEE transactions on electron devices (01.11.2002)

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N super(+)/P junction leakage characteristics of Co salicide process for 0.15 mu m CMOS devices

by Lee, Key-Min, Choi, Chel-Jong, Lee, Joo-Hyoung, Seong, Tae-Yeon, Park, Young-Jin, Hong, Sung-Kwon, Ahn, Jae-Gyung, Lee, Hi-Deok
Published in IEEE transactions on electron devices (01.05.2002)

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N+/P junction leakage characteristics of Co salicide process for 0.15 [mu]m CMOS devices

by Lee, Key-Min, Choi, Chel-Jong, Lee, Joo-Hyoung, Seong, Tae-Yeon, Park, Young-Jin, Hong, Sung-Kwon, Ahn, Jae-Gyung, Lee, Hi-Deok
Published in IEEE transactions on electron devices (01.05.2002)

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N/sup +//P junction leakage characteristics of Co salicide process for 0.15 μm CMOS devices

by Key-Min Lee, Chel-Jong Choi, Joo-Hyoung Lee, Tae-Yeon Seong, Young-Jin Park, Sung-Kwon Hong, Jae-Gyung Ahn, Hi-Deok Lee
Published in IEEE transactions on electron devices (01.05.2002)

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N(+)/P junction leakage characteristics of Co salicide process for 0.15 mum CMOS devices

by Lee, Key-Min, Choi, Chel-Jong, Lee, Joo-Hyoung, Seong, Tae-Yeon, Park, Young-Jin, Hong, Sung-Kwon, Ahn, Jae-Gyung, Lee, Hi-Deok
Published in IEEE transactions on electron devices (01.05.2002)

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N/sup +//P junction leakage characteristics of Co salicide process for 0.15 /spl mu/m CMOS devices

by Key-Min Lee, Chel-Jong Choi, Joo-Hyoung Lee, Tae-Yeon Seong, Young-Jin Park, Sung-Kwon Hong, Jae-Gyung Ahn, Hi-Deok Lee
Published in IEEE transactions on electron devices (01.05.2002)

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A study of stress-induced p super(+)/n salicided junction leakage failure and optimized process conditions for sub-0.15- mu m CMOS technology

by Lee, Joo-Hyoung, Park, Sung-Hyung, Lee, Key-Min, Youn, Ki-Seok, Park, Young-Jin, Choi, Chel-Jong, Seong, Tae-Yeon, Lee, Hi-Deok
Published in IEEE transactions on electron devices (01.01.2002)

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