Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
Choi, Min Sup, Qu, Deshun, Lee, Daeyeong, Liu, Xiaochi, Watanabe, Kenji, Taniguchi, Takashi, Yoo, Won Jong
Published in ACS nano (23.09.2014)
Published in ACS nano (23.09.2014)
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Journal Article
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
Kim, Changsik, Moon, Inyong, Lee, Daeyeong, Choi, Min Sup, Ahmed, Faisal, Nam, Seunggeol, Cho, Yeonchoo, Shin, Hyeon-Jin, Park, Seongjun, Yoo, Won Jong
Published in ACS nano (28.02.2017)
Published in ACS nano (28.02.2017)
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Journal Article
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
Li, Hua-Min, Lee, Daeyeong, Qu, Deshun, Liu, Xiaochi, Ryu, Jungjin, Seabaugh, Alan, Yoo, Won Jong
Published in Nature communications (24.03.2015)
Published in Nature communications (24.03.2015)
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Journal Article
P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor
Liu, Xiaochi, Qu, Deshun, Ryu, Jungjin, Ahmed, Faisal, Yang, Zheng, Lee, Daeyeong, Yoo, Won Jong
Published in Advanced materials (Weinheim) (23.03.2016)
Published in Advanced materials (Weinheim) (23.03.2016)
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Journal Article
Effects of Plasma Treatment on Contact Resistance and Sheet Resistance of Graphene FET
Ra, Chang-Ho, Choi, Min Sup, Lee, Daeyeong, Yoo, Won Jong
Published in Biuletyn Uniejowski (30.04.2016)
Published in Biuletyn Uniejowski (30.04.2016)
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Journal Article
Passivated ambipolar black phosphorus transistors
Yue, Dewu, Lee, Daeyeong, Jang, Young Dae, Choi, Min Sup, Nam, Hye Jin, Jung, Duk-Young, Yoo, Won Jong
Published in Nanoscale (07.07.2016)
Published in Nanoscale (07.07.2016)
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Journal Article
Self-screened high performance multi-layer MoS₂ transistor formed by using a bottom graphene electrode
Qu, Deshun, Liu, Xiaochi, Ahmed, Faisal, Lee, Daeyeong, Yoo, Won Jong
Published in Nanoscale (07.12.2015)
Published in Nanoscale (07.12.2015)
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Journal Article
P-Type Polar Transition of Chemically Doped Multilayer MoS sub(2) Transistor
Liu, Xiaochi, Qu, Deshun, Ryu, Jungjin, Ahmed, Faisal, Yang, Zheng, Lee, Daeyeong, Yoo, Won Jong
Published in Advanced materials (Weinheim) (01.03.2016)
Published in Advanced materials (Weinheim) (01.03.2016)
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Journal Article
P‐Type Polar Transition of Chemically Doped Multilayer MoS 2 Transistor
Liu, Xiaochi, Qu, Deshun, Ryu, Jungjin, Ahmed, Faisal, Yang, Zheng, Lee, Daeyeong, Yoo, Won Jong
Published in Advanced materials (Weinheim) (01.03.2016)
Published in Advanced materials (Weinheim) (01.03.2016)
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Journal Article
APPARATUS AND METHOD FOR DYNAMIC THERMAL MANAGEMENT USING FREQUENCY CLAMPING AND IDLE INJECTION
PARK BUMGYU, SHIN HANJUN, PARK CHOONGHOON, CHOI DAHYE, LEE DAEYEONG, HAN DONGHEE, PARK JONG LAE
Year of Publication 17.03.2023
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Year of Publication 17.03.2023
Patent
Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrodeElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr06076a
Qu, Deshun, Liu, Xiaochi, Ahmed, Faisal, Lee, Daeyeong, Yoo, Won Jong
Year of Publication 13.11.2015
Year of Publication 13.11.2015
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Journal Article
Self-screened high performance multi-layer MoS sub(2) transistor formed by using a bottom graphene electrode
Qu, Deshun, Liu, Xiaochi, Ahmed, Faisal, Lee, Daeyeong, Yoo, Won Jong
Published in Nanoscale (01.11.2015)
Published in Nanoscale (01.11.2015)
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Journal Article
Passivated ambipolar black phosphorus transistorsElectronic supplementary information (ESI) available: Transfer characteristics of BP field effect transistors (BV1-BV4) (Fig. S1 and S2 and Table S1); output characteristics of BP field effect transistors in different directions (Fig. S3). Performance characteristics of the recent work (Table S2). N-type BP FETs (Fig. S4). Output characteristics of BV passivated BP field effect transistors after exposing to air for 180 days (Fig. S5). The relation
Yue, Dewu, Lee, Daeyeong, Jang, Young Dae, Choi, Min Sup, Nam, Hye Jin, Jung, Duk-Young, Yoo, Won Jong
Year of Publication 23.06.2016
Year of Publication 23.06.2016
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Journal Article
Lateral MoS 2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
Choi, Min Sup, Qu, Deshun, Lee, Daeyeong, Liu, Xiaochi, Watanabe, Kenji, Taniguchi, Takashi, Yoo, Won Jong
Published in ACS nano (23.09.2014)
Published in ACS nano (23.09.2014)
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Journal Article
DVFS method of memory hierarchy based on CPU microarchitectural information
Park, Bumgyu, Park, Jonglae, Joo, Hyunwook, Park, Choonghoon, Lee, Daeyeong, Jo, Chulmin, Hur, Woonhaing
Published in 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS) (24.10.2022)
Published in 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS) (24.10.2022)
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