An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution
Cho, Min Hee, Jeon, Namho, Kim, Taek Yong, Jeong, Moonyoung, Lee, Sungsam, Hong, Jong Seo, Hong, Hyeong Sun, Yamada, Satoru
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
A novel method to characterize DRAM process variation by the analyzing stochastic properties of retention time distribution
Min Hee Cho, Namho Jeon, Moonyoung Jeong, Sungsam Lee, Yamada, Satoru, Hyeongsun Hong
Published in 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) (01.02.2017)
Published in 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) (01.02.2017)
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Conference Proceeding
Lateral-Extended (LatEx.) active for improvement of data retention time for sub 60nm DRAM era
Sungsam Lee, Jongchul Park, Kwangwoo Lee, Sungho Jang, Junho Lee, Hyunsook Byun, Ilgweon Kim, Yongjin Choi, Myoungseob Shim, Duheon Song, Joosung Park, Taewoo Lee, Dongho Shin, Gyoyoung Jin, Kinam Kim
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)
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Conference Proceeding
In-Depth Analysis of NBTI at 2X nm Node DRAM
Seunguk Han, Sungsam Lee, Sungkweon Baek, Sungho Jang, Wonchang Jeong, Kijae Huh, Moonyoung Jeong, Junhee Lim, Yamada, Satoru, Hyeongsun Hong, Kyupil Lee, Gyoyoung Jin, Eunseung Jung
Published in 2016 IEEE 8th International Memory Workshop (IMW) (01.05.2016)
Published in 2016 IEEE 8th International Memory Workshop (IMW) (01.05.2016)
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Conference Proceeding
Leakage current mechanisms in sub-50nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes
Chung, Eun-Ae, Kim, Young-Pil, Nam, Kab-Jin, Lee, Sungsam, Min, Ji-Young, Shin, Yu-Gyun, Choi, Siyoung, Jin, Gyoyoung, Moon, Joo-Tae, Kim, Sangsig
Published in Solid-state electronics (01.02.2011)
Published in Solid-state electronics (01.02.2011)
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Journal Article
Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes
CHUNG, Eun-Ae, KIM, Young-Pil, NAM, Kab-Jin, LEE, Sungsam, MIN, Ji-Young, SHIN, Yu-Gyun, CHOI, Siyoung, JIN, Gyoyoung, MOON, Joo-Tae, KIM, Sangsig
Published in Solid-state electronics (01.02.2011)
Published in Solid-state electronics (01.02.2011)
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Journal Article
Semiconductor device and method for manufacturing the same
Chung, Chunhyung, Kim, Junsoo, Yamada, Satoru, Choi, Eunae, Jeong, MoonYoung, Cho, Min Hee, Lee, Sungsam, Ahn, Hyoshin, Jeon, Joohyun, Chae, Kyo-Suk
Year of Publication 01.10.2019
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Year of Publication 01.10.2019
Patent
A 6F/sup 2/ DRAM technology in 60nm era for gigabit densities
Changhyun Cho, Sangho Song, Sangho Kim, Sungho Jang, Sungsam Lee, Hyungtak Kim, Yangsoo Sung, Sangmin Jeon, Gisung Yeo, Youngsun Kim, Yungi Kim, Gyoyoung Jin, Kinam Kim
Published in Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 (2005)
Published in Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 (2005)
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Conference Proceeding
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
CHUNG Chunhyung, KIM Junsoo, JEON Joohyun, JEONG MoonYoung, YAMADA Satoru, CHO Min Hee, CHAE Kyo-Suk, LEE Sungsam, AHN Hyoshin, CHOI Eunae
Year of Publication 24.08.2017
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Year of Publication 24.08.2017
Patent
Semiconductor device and method for manufacturing the same
LEE SUNGSAM, JEONG MOONYOUNG, CHO MIN HEE, YAMADA SATORU, CHUNG CHUNHYUNG, AHN HYOSHIN, CHAE KYO-SUK, CHOI EUNAE, KIM JUNSOO, JEON JOOHYUN
Year of Publication 29.08.2017
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Year of Publication 29.08.2017
Patent
70nm DRAM technology for DDR-3 application
Hyungtak Kim, Sangho Kim, Sungsam Lee, Sungho Jang, Ji-hoon Kim, Yangsoo Sung, Junwoong Park, Saehan Kwon, Sangmin Jun, Wontae Park, Daehan Han, Changhyun Cho, Yungi Kim, Kinam Kim, Byungil Ryu
Published in IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech) (2005)
Published in IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech) (2005)
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Conference Proceeding