수직 게이트 모듈을 포함하는 측면 III-질화물 디바이스들
NEUFELD CARL JOSEPH, GUPTA GEETAK, SWENSON BRIAN L, BISI DAVIDE, LAL RAKESH K, MISHRA UMESH
Year of Publication 15.06.2021
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Year of Publication 15.06.2021
Patent
High-field effects in silicon nitride passivated GaN MODFETs
Sahoo, D.K., Lal, R.K., Hyungtak Kim, Tilak, V., Eastman, L.F.
Published in IEEE transactions on electron devices (01.05.2003)
Published in IEEE transactions on electron devices (01.05.2003)
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Journal Article
CONFIGURATIONS FOR FOUR QUADRANT III-NITRIDE SWITCHES
LAL, Rakesh K, NEUFELD, Carl Joseph, RHODES, David Michael, BISI, Davide, GUPTA, Geetak
Year of Publication 15.08.2024
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Year of Publication 15.08.2024
Patent
N-polar devices including a depleting layer with improved conductivity
Gupta, Geetak, Rhodes, David Michael, Mishra, Umesh, Bisi, Davide, Lal, Rakesh K
Year of Publication 30.04.2024
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Year of Publication 30.04.2024
Patent
III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES
Gupta, Geetak, Rhodes, David Michael, Mishra, Umesh, Bisi, Davide, Lal, Rakesh K, Neufeld, Carl Joseph
Year of Publication 19.10.2023
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Year of Publication 19.10.2023
Patent
LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE
LAL, Rakesh K, NEUFELD, Carl Joseph, BISI, Davide, SWENSON, Brian L, MISHRA, Umesh, GUPTA, Geetak
Year of Publication 27.07.2022
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Year of Publication 27.07.2022
Patent
N-POLAR DEVICES INCLUDING A DEPLETING LAYER WITH IMPROVED CONDUCTIVITY
Gupta, Geetak, Rhodes, David Michael, Mishra, Umesh, Bisi, Davide, Lal, Rakesh K
Year of Publication 19.05.2022
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Year of Publication 19.05.2022
Patent