Photoluminescence of MBE grown wurtzite Be-doped GaN
Dewsnip, D J, Andrianov, A V, Harrison, I, Orton, J W, Lacklison, D E, Ren, G B, Hooper, S E, Cheng, T S, Foxon, C T
Published in Semiconductor science and technology (01.05.1998)
Published in Semiconductor science and technology (01.05.1998)
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Journal Article
Low-temperature luminescence study of GaN films grown by MBE
Andrianov, A V, Lacklison, D E, Orton, J W, Dewsnip, D J, Hooper, S E, Foxon, C T
Published in Semiconductor science and technology (01.03.1996)
Published in Semiconductor science and technology (01.03.1996)
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Journal Article
Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy
Ber, B Ya, Kudriavtsev, Yu A, Merkulov, A V, Novikov, S V, Lacklison, D E, Orton, J W, Cheng, T S, Foxon, C T
Published in Semiconductor science and technology (01.01.1998)
Published in Semiconductor science and technology (01.01.1998)
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Journal Article
The growth and properties of group III nitrides
Foxon, C.T., Cheng, T.S., Novikov, S.V., Lacklison, D.E., Jenkins, L.C., Johnston, D., Orton, J.W., Hooper, S.E., Baba-Ali, N., Tansley, T.L., Tret'yakov, V.V.
Published in Journal of crystal growth (01.05.1995)
Published in Journal of crystal growth (01.05.1995)
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Journal Article
Conference Proceeding
Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE
Flannery, L.B, Harrison, I, Lacklison, D.E, Dykeman, R.I, Cheng, T.S, Foxon, C.T
Published in Materials science & engineering. B, Solid-state materials for advanced technology (18.12.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (18.12.1997)
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Conference Proceeding
Observation of resonant Raman lines during the photoluminescence of doped GaN
Dewsnip, D J, Andrianov, A V, Harrison, I, Lacklison, D E, Orton, J W, Morgan, J, Ren, G B, Cheng, T S, Hooper, S E, Foxon, C T
Published in Semiconductor science and technology (01.01.1997)
Published in Semiconductor science and technology (01.01.1997)
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Journal Article
Recombination lifetime measurements in AlGaAs/GaAs quantum well structures
Orton, J W, Dawson, P, Lacklison, D E, Cheng, T S, Foxon, C T
Published in Semiconductor science and technology (01.09.1994)
Published in Semiconductor science and technology (01.09.1994)
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Journal Article
Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)
Cheng, T S, Foxon, C T, Jenkins, L C, Hooper, S E, Lacklison, D E, Orton, J W, Ber, B Ya, Merkulov, A V, Novikov, S V
Published in Semiconductor science and technology (01.04.1996)
Published in Semiconductor science and technology (01.04.1996)
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Journal Article
MBE growth and characterization of magnesium-doped gallium nitride
Dewsnip, D J, Orton, J W, Lacklison, D E, Flannery, L, Andrianov, A V, Harrison, I, Hooper, S E, Cheng, T S, Foxon, C T, Novikov, S N, Ber, B Ya, Kudriavtsev, Yu A
Published in Semiconductor science and technology (01.08.1998)
Published in Semiconductor science and technology (01.08.1998)
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Journal Article
The growth and properties of mixed group V nitrides
Orton, J. W., Lacklison, D. E., Baba-Ali, N., Foxon, C. T., Cheng, T. S., Novikov, S. V., Johnston, D. F. C., Hooper, S. E., Jenkins, L. C., Challis, L. J., Tansley, T. L.
Published in Journal of electronic materials (01.04.1995)
Published in Journal of electronic materials (01.04.1995)
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Journal Article
Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates
Cheng, T.S., Hooper, S.E., Jenkins, L.C., Foxon, C.T., Lacklison, D.E., Dewsnip, J.D., Orton, J.W.
Published in Journal of crystal growth (01.09.1996)
Published in Journal of crystal growth (01.09.1996)
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Journal Article
Conference Proceeding
Wavelength-dependent photoconduction effects on the second sub-band occupancy in (Al, Ga)As/GaAs heterojunctions
Harris, J J, Lacklison, D E, Foxon, C T, Selten, F M, Suckling, A M, Nicholas, R J, Barnham, K W J
Published in Semiconductor science and technology (01.12.1987)
Published in Semiconductor science and technology (01.12.1987)
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Journal Article
Auger investigation of group III nitride films grown by molecular beam epitaxy
Novikov, S.V., Foxon, C.T., Cheng, T.S., Tansley, T.L., Orton, J.W., Lacklison, D.E., Johnston, D., Baba-Ali, N., Hooper, S.E., Jenkins, L.C., Eaves, L.
Published in Journal of crystal growth (01.01.1995)
Published in Journal of crystal growth (01.01.1995)
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Journal Article
Conference Proceeding
A comparison of photoconduction effects in (Al, Ga)As and GaAs/(Al, Ga)As heterostructures
Lacklison, D E, Harris, J J, Foxon, C T, Hewett, J, Hilton, D, Roberts, C
Published in Semiconductor science and technology (01.07.1988)
Published in Semiconductor science and technology (01.07.1988)
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Journal Article
RHEED studies of MOMBE growth using TMGa or TEGa with As2
LACKLISON, D. E, FOXON, C. T, ZHANG, J, JOYCE, B. A, GIBSON, E. M
Published in Journal of crystal growth (01.05.1992)
Published in Journal of crystal growth (01.05.1992)
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Conference Proceeding
Journal Article
A comparison of MBE and MOMBE/CBE growth mechanisms using modulated beam mass spectrometry and RHEED
Foxon, C.T., Gibson, E.M., Zhang, J., Joyce, B.A., Lacklison, D.E.
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Journal Article
Conference Proceeding
Photomagnetic effect in ferric borate
Lacklison, D E, Chadwick, J, Page, J L
Published in Journal of physics. D, Applied physics (01.04.1972)
Published in Journal of physics. D, Applied physics (01.04.1972)
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