Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate
Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.
Published in Technical physics letters (2018)
Published in Technical physics letters (2018)
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Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime
Bagraev, N. T., Chaikina, E. I., Danilovskii, E. Yu, Gets, D. S., Klyachkin, L. E., L’vova, T. V., Malyarenko, A. M.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2016)
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Wet sulfur passivation of GaSb(1 0 0) surface for optoelectronic applications
Kunitsyna, E.V., L’vova, T.V., Dunaevskii, M.S., Terent’ev, Ya.V., Semenov, A.N., Solov’ev, V.A., Meltser, B.Ya, Ivanov, S.V., Yakovlev, Yu.P.
Published in Applied surface science (01.07.2010)
Published in Applied surface science (01.07.2010)
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The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots
Kryzhanovskaya, N. V., Lebedev, M. V., L’vova, T. V., Kudashova, Yu. V., Shostak, I. I., Moiseev, E. I., Zhukov, A. E., Maximov, M. V., Kulagina, M. M., Nadtochiy, A. M., Troshkov, S. I., Blokhin, A. A., Bobrov, M. A.
Published in Technical physics letters (01.07.2015)
Published in Technical physics letters (01.07.2015)
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Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells
Kunitsyna, E.V., Andreev, I.A., Sherstnev, V.V., L’vova, T.V., Mikhailova, M.P., Yakovlev, Yu.P., Ahmetoglu (Afrailov), M., Kaynak, G., Gurler, O.
Published in Optical materials (01.10.2010)
Published in Optical materials (01.10.2010)
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Journal Article
Sulfide passivation of InAs(100) substrates in Na2S solutions
L’vova, T. V., Sedova, I. V., Dunaevskiĭ, M. S., Karpenko, A. N., Ulin, V. P., Ivanov, S. V., Berkovits, V. L.
Published in Physics of the solid state (01.06.2009)
Published in Physics of the solid state (01.06.2009)
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Sulfide passivating coatings on GaAs(100) surface under conditions of MBE growth of 〈II–VI〉/GaAs
Sedova, I. V., L’vova, T. V., Ulin, V. P., Sorokin, S. V., Ankudinov, A. V., Berkovits, V. L., Ivanov, S. V., Kop’ev, P. S.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2002)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2002)
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Journal Article
Wet chemical nitridation of (100)GaAs surface: Effect on electrical parameters of surface-barrier Au-Ti/GaAs structures
L’vova, T. V., Berkovits, V. L., Dunaevskii, M. S., Lantratov, V. M., Makarenko, I. V., Ulin, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2003)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2003)
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Journal Article
MBE growth and studies of hybrid heterostructures with II-VI/InAs heterovalent interfaces in the active region
Lyublinskaya, O. G., Kaygorodov, V. A., Sorokin, S. V., Sedova, I. V., Koryakov, I. V., L'vova, T. V., Berkovits, V. L., Meltser, B. Ya, Solov'ev, V. A., Terent'ev, Ya. V., Toropov, A. A., Ivanov, S. V.
Published in Physica status solidi. C (01.03.2004)
Published in Physica status solidi. C (01.03.2004)
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Journal Article
InSb/InAsSb nanostructures for Mid-IR optoelectronics
Ivanov, S. V., Solov’ev, V. A., Semenov, A. N., Mel’tser, B. Ya, Sorokin, S. V., Lyublinskaya, O. G., Terent’ev, Ya. V., Usikova, A. A., L’vova, T. V., Kop’ev, P. S.
Published in Bulletin of the Russian Academy of Sciences. Physics (01.01.2007)
Published in Bulletin of the Russian Academy of Sciences. Physics (01.01.2007)
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Journal Article
Photoinduced formation of dimers at a liquid/(001)GaAs interface
Berkovits, VL, Gusev, AO, Lantratov, VM, L'vova, TV, Pushnyi, AB, Ulin, VP, Paget, D
Published in Physical review. B, Condensed matter (15.09.1996)
Published in Physical review. B, Condensed matter (15.09.1996)
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Journal Article
Molecular-beam epitaxy of ZnSe-based heterostructures on Na2S-passivated GaAs substrates
L'vova, T.V., Sedova, I.V., Ulin, V.P., Sorokin, S.V., Solov'ev, V.A., Sitnikova, A.A., Berkovits, V.L., Ivanov, S.V.
Published in Vacuum (01.05.2000)
Published in Vacuum (01.05.2000)
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Journal Article
Wet sulfur passivation of GaSb(100) surface for optoelectronic applications
KUNITSYNA, E. V, L'VOVA, T. V, DUNAEVSKII, M. S, TERENT'EV, Ya. V, SEMENOV, A. N, SOLOV'EV, V. A, MELTSER, B. Ya, IVANOV, S. V, YAKOVLEV, Yu. P
Published in Applied surface science (2010)
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Published in Applied surface science (2010)
Conference Proceeding
Narrow gap III―V materials for infrared photodiodes and thermophotovoltaic cells
KUNITSYNA, E. V, ANDREEV, I. A, SHERSTNEV, V. V, L'VOVA, T. V, MIKHAILOVA, M. P, YAKOVLEV, Yu. P, AHMETOGLU, M, KAYNAK, G, GURLER, O
Published in Optical materials (Amsterdam) (2010)
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Published in Optical materials (Amsterdam) (2010)
Conference Proceeding
Optical anisotropy of the (100) surfaces in AlxGa1−x As ternary compounds
Berkovits, V. L., Gordeeva, A. B., Lantratov, V. M., L’vova, T. V.
Published in Physics of the solid state (01.05.2000)
Published in Physics of the solid state (01.05.2000)
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