3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS 2 Electrode for High‐Density Neuromorphic Systems
Lee, Kyumin, Hwang, Seungkwon, Kim, Dongmin, Yoon, Jongwon, Kwon, Jung‐Dae, Kim, Yonghun, Hwang, Hyunsang
Published in Advanced functional materials (01.07.2024)
Published in Advanced functional materials (01.07.2024)
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Journal Article
Improved silver paste allows 19%-efficient c-Si solar cell with homogeneous high-sheet-resistance POCl3 emitter
Jong-Keun Lim, Tae Jun Kim, Kyumin Lee, Junmo Seo, Myung-Ick Hwang, Won-Jae Lee, Eun-Chel Cho
Published in 2012 38th IEEE Photovoltaic Specialists Conference (01.06.2012)
Published in 2012 38th IEEE Photovoltaic Specialists Conference (01.06.2012)
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Conference Proceeding
Sodium-based nano-ionic synaptic transistor with improved retention characteristics
Lee, Kyumin, Lee, Jongwon, Nikam, Revannath Dnyandeo, Heo, Seongjae, Hwang, Hyunsang
Published in Nanotechnology (06.11.2020)
Published in Nanotechnology (06.11.2020)
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Journal Article
Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf0.5Zr0.5O2 Utilizing Schottky Emission Current in Switchable Diode
Lee, Kyumin, Oh, Sang-Ho, Jang, Hojung, Lee, Sunhyeong, Lee, Byeong-Joo, Hwang, Hyunsnang
Published in IEEE electron device letters (28.08.2024)
Published in IEEE electron device letters (28.08.2024)
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Journal Article
Enhanced ON/OFF Ratio (4 × 10 5 ) and Robust Endurance (> 10 10 ) in an InGaZnO/Hf x Zr 1-x O 2 Ferroelectric Diode via Defect Engineering
Jung, Laeyong, Oh, Seungyeol, Jang, Hojung, Lee, Kyumin, Choi, Wooseok, Hwang, Hyunsang
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
Enhanced on/off Ratio (4 \times 10 ^}\text and Robust Endurance ( > 10 ^}\text in an InGaZnO/ Hf } Zr }} O } Ferroelectric Diode via Defect Engineering
Jung, Laeyong, Oh, Seungyeol, Jang, Hojung, Lee, Kyumin, Choi, Wooseok, Hwang, Hyunsang
Published in IEEE transactions on electron devices (06.02.2024)
Published in IEEE transactions on electron devices (06.02.2024)
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Journal Article
1010) in an InGaZnO/HfxZr1-xO2 Ferroelectric Diode via Defect Engineering
Jung, Laeyong, Oh, Seungyeol, Jang, Hojung, Lee, Kyumin, Choi, Wooseok, Hwang, Hyunsang
Published in IEEE transactions on electron devices (01.01.2024)
Published in IEEE transactions on electron devices (01.01.2024)
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Journal Article
Variability and Reliability Study of Nano-Scale Hf0.5Zr0.5O2 Ferroelectric Devices Using O3 Treatment
Jang, Hojung, Kashir, Alireza, Oh, Seungyeol, Lee, Kyumin, Jung, Laeyong, Habibi, Mostafa, Schenk, Tony, Hwang, Hyunsang
Published in IEEE electron device letters (01.03.2024)
Published in IEEE electron device letters (01.03.2024)
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Journal Article
Variability and Reliability Study of Nano-scale Hf 0.5 Zr 0.5 O 2 Ferroelectric Devices Using O 3 Treatment
Jang, Hojung, Kashir, Alireza, Oh, Seungyeol, Lee, Kyumin, Jung, Laeyong, Habibi, Mostafa, Schenk, Tony, Hwang, Hyunsang
Published in IEEE electron device letters (2024)
Published in IEEE electron device letters (2024)
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Journal Article
Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf 0.5 Zr 0.5 O 2 Utilizing Schottky Emission Current in Switchable Diode
Lee, Kyumin, Oh, Sang-Ho, Jang, Hojung, Lee, Sunhyeong, Lee, Byeong-Joo, Hwang, Hyunsnang
Published in IEEE electron device letters (2024)
Published in IEEE electron device letters (2024)
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Journal Article
Highly Scalable Vertical Bypass RRAM Using Interface-Type Resistive Switching Mechanism for V-Nand Memory Applications
Han, Geonhui, Seo, Jongseon, Lee, Kyumin, Kim, Dongmin, Seo, Yoori, Lee, Jinwoo, Choi, Jinmyung, Ahn, Dongho, Oh, Sechung, Hwang, Hyunsang
Published in IEEE transactions on electron devices (18.09.2024)
Published in IEEE transactions on electron devices (18.09.2024)
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Journal Article
Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al2O3 barrier layer
Lee, Kyumin, Kwak, Myounghoon, Choi, Wooseok, Lee, Chuljun, Lee, Jongwon, Noh, Sujung, Lee, Jisung, Lee, Hansaem, Hwang, Hyunsang
Published in Nanotechnology (02.07.2021)
Published in Nanotechnology (02.07.2021)
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Journal Article
Impact of laser hole drilling on the breakage rate of multicrystalline silicon wafers
Kyumin Lee, Jong-Keun Lim, Sang-Kyun Kim, In-Sik Moon, Jae-Won Seo, Won-jae Lee, Eun-Chel Cho
Published in 2011 37th IEEE Photovoltaic Specialists Conference (01.06.2011)
Published in 2011 37th IEEE Photovoltaic Specialists Conference (01.06.2011)
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Conference Proceeding
Bypass Resistive RAM with Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications
Han, Geonhui, Lee, Kyumin, Kim, Dongmin, Seo, Yoori, Lee, Jinwoo, Choi, Jinmyung, Ahn, Dongho, Oh, Sechung, Hwang, Hyunsang
Published in IEEE electron device letters (01.02.2024)
Published in IEEE electron device letters (01.02.2024)
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Journal Article
Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al2O3barrier layer
Lee, Kyumin, Kwak, Myounghoon, Choi, Wooseok, Lee, Chuljun, Lee, Jongwon, Noh, Sujung, Lee, Jisung, Lee, Hansaem, Hwang, Hyunsang
Published in Nanotechnology (12.04.2021)
Published in Nanotechnology (12.04.2021)
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Journal Article
3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS2 Electrode for High‐Density Neuromorphic Systems
Lee, Kyumin, Hwang, Seungkwon, Kim, Dongmin, Yoon, Jongwon, Kwon, Jung‐Dae, Kim, Yonghun, Hwang, Hyunsang
Published in Advanced functional materials (01.07.2024)
Published in Advanced functional materials (01.07.2024)
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Journal Article