Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel
Lee, Dong-Hee, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yang, Jong-Heon, Hwang, Chi-Sun, Yoon, Sung-Min
Published in IEEE electron device letters (01.03.2024)
Published in IEEE electron device letters (01.03.2024)
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Journal Article
Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers
Cho, Yun-Ju, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Kim, Hee-Ok, Yang, Jong-Heon, Hwang, Chi-Sun, Yoon, Sung-Min
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions
Noh, Shin-Ho, Kim, Hyo-Eun, Yang, Jong-Heon, Kim, Yong-Hae, Kwon, Young-Ha, Seong, Nak-Jin, Hwang, Chi-Sun, Choi, Kyu-Jeong, Yoon, Sung-Min
Published in IEEE transactions on electron devices (01.10.2022)
Published in IEEE transactions on electron devices (01.10.2022)
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Journal Article
Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O
Ahn, Hyun-Min, Moon, Seo-Hyun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yang, Jong-Heon, Kim, Yong-Hae, Yoon, Sung-Min
Published in IEEE electron device letters (01.11.2022)
Published in IEEE electron device letters (01.11.2022)
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Journal Article
Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers
Ahn, Hyun-Min, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yoon, Sung-Min
Published in Electronic materials letters (01.05.2022)
Published in Electronic materials letters (01.05.2022)
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Journal Article
Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory
PARK, Il-Mok, JUNG, Jung-Kyu, RYU, Sang-Ouk, CHOI, Kyu-Jeong, YU, Byoung-Gon, PARK, Young-Bae, SEUNG MIN HAN, JOO, Young-Chang
Published in Thin solid films (28.11.2008)
Published in Thin solid films (28.11.2008)
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Journal Article
Sb-Se-based phase-change memory device with lower power and higher speed operations
Sung-Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, Kyu-Jeong Choi, Park, Y.-S., Seung-Yun Lee, Byoung-Gon Yu, Myung-Jin Kang, Se-Young Choi, Wuttig, M.
Published in IEEE electron device letters (01.06.2006)
Published in IEEE electron device letters (01.06.2006)
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Journal Article
The effect of antimony-doping on Ge2Sb2Te5, a phase change material
CHOI, Kyu-Jeong, YOON, Sung-Min, LEE, Nam-Yeal, LEE, Seung-Yun, PARK, Young-Sam, YU, Byoung-Gon, RYU, Sang-Ouk
Published in Thin solid films (01.10.2008)
Published in Thin solid films (01.10.2008)
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Journal Article
Device-level XPS analysis for physical and electrical characterization of oxide-channel thin-film transistors
Cho, Yun-Ju, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Lee, Myung Keun, Kim, Gyungtae, Yoon, Sung-Min
Published in Journal of applied physics (21.08.2024)
Published in Journal of applied physics (21.08.2024)
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Journal Article
Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator
Kim, Dong-Hee, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min
Published in ACS applied materials & interfaces (29.11.2023)
Published in ACS applied materials & interfaces (29.11.2023)
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Journal Article
Synergic strategies of composition-modified bilayer channel configuration and ozone-processed gate stacks for atomic-layer deposited In-Ga-Zn-O thin-film transistors
Bae, Soo-Hyun, Moon, Seo-Hyun, Kwon, Young Ha, Nak-Jin-Seong, Choi, Kyu-Jeong, Yoon, Sung-Min
Published in Journal of alloys and compounds (15.06.2022)
Published in Journal of alloys and compounds (15.06.2022)
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Journal Article
Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions
Kim, Hyeong-Rae, Kim, Gi-Heon, Seong, Nak-Jin, Choi, Kyu-Jeong, Kim, Sang-Kyun, Yoon, Sung-Min
Published in Nanotechnology (23.10.2020)
Published in Nanotechnology (23.10.2020)
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Journal Article
Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths
Bae, Soo-Hyun, Yang, Jong-Heon, Kim, Yong-Hae, Kwon, Young Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yoon, Sung-Min
Published in ACS applied materials & interfaces (13.07.2022)
Published in ACS applied materials & interfaces (13.07.2022)
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Journal Article
Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration
Ahn, Hyun-Min, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yang, Jong-Heon, Kim, Yong-Hae, Kim, Gyungtae, Yoon, Sung-Min
Published in Nanotechnology (09.04.2023)
Published in Nanotechnology (09.04.2023)
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Journal Article
Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term stability of thin film transistors
Moon, Seo-Hyun, Bae, Soo-Hyun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min
Published in Ceramics international (15.07.2022)
Published in Ceramics international (15.07.2022)
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Journal Article
Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm
Oh, Chae-Eun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min
Published in Materials science in semiconductor processing (01.03.2024)
Published in Materials science in semiconductor processing (01.03.2024)
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Journal Article
Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer
Cho, Yun-Ju, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yoon, Sung-Min
Published in Materials science in semiconductor processing (01.08.2024)
Published in Materials science in semiconductor processing (01.08.2024)
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Journal Article
Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor
Lee, Dong-Hee, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yang, Jong-Heon, Hwang, Chi-Sun, Yoon, Sung-Min
Published in Electronic materials letters (01.11.2024)
Published in Electronic materials letters (01.11.2024)
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