Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
Kim, Sungho, Kim, Sae-Jin, Kim, Kyung Min, Lee, Seung Ryul, Chang, Man, Cho, Eunju, Kim, Young-Bae, Kim, Chang Jung, -In Chung, U., Yoo, In-Kyeong
Published in Scientific reports (22.04.2013)
Published in Scientific reports (22.04.2013)
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Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
Lee, Myoung-Jae, Han, Seungwu, Jeon, Sang Ho, Park, Bae Ho, Kang, Bo Soo, Ahn, Seung-Eon, Kim, Ki Hwan, Lee, Chang Bum, Kim, Chang Jung, Yoo, In-Kyeong, Seo, David H, Li, Xiang-Shu, Park, Jong-Bong, Lee, Jung-Hyun, Park, Youngsoo
Published in Nano letters (08.04.2009)
Published in Nano letters (08.04.2009)
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A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory
Lee, Myoung-Jae, Lee, Dongsoo, Cho, Seong-Ho, Hur, Ji-Hyun, Lee, Sang-Moon, Seo, David H, Kim, Dong-Sik, Yang, Moon-Seung, Lee, Sunghun, Hwang, Euichul, Uddin, Mohammad Rakib, Kim, Hojung, Chung, U-In, Park, Youngsoo, Yoo, In-Kyeong
Published in Nature communications (16.10.2013)
Published in Nature communications (16.10.2013)
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HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
Seungyeol Oh, Taeho Kim, Myunghoon Kwak, Jeonghwan Song, Jiyong Woo, Sanghun Jeon, In Kyeong Yoo, Hyunsang Hwang
Published in IEEE electron device letters (01.06.2017)
Published in IEEE electron device letters (01.06.2017)
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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Lee, Myoung-Jae, Lee, Chang Bum, Lee, Dongsoo, Lee, Seung Ryul, Chang, Man, Hur, Ji Hyun, Kim, Young-Bae, Kim, Chang-Jung, Seo, David H., Seo, Sunae, Chung, U-In, Yoo, In-Kyeong, Kim, Kinam
Published in Nature materials (01.08.2011)
Published in Nature materials (01.08.2011)
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A New Operating Scheme by Switching the Polarity of Program/Erase Bias for Partially Oxidized Amorphous-Si-Based Charge-Trap Memory
Sangjin Park, Young-Kwan Cha, Cha, D., Shin, S., Jae Woong Hyun, Jung Hoon Lee, Youngsoo Park, In-Kyeong Yoo, Suk-Ho Choi
Published in IEEE transactions on electron devices (01.11.2006)
Published in IEEE transactions on electron devices (01.11.2006)
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Journal Article
High threshold voltage p-GaN gate power devices on 200 mm Si
Jongseob Kim, Sun-Kyu Hwang, Injun Hwang, Hyoji Choi, Soogine Chong, Hyun-Sik Choi, Woochul Jeon, Hyuk Soon Choi, Jun Yong Kim, Young Hwan Park, Kyung Yeon Kim, Jong-Bong Park, Jong-Bong Ha, Ki Yeol Park, Jaejoon Oh, Jai Kwang Shin, U-In Chung, In-Kyeong Yoo, Kinam Kim
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2013)
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.05.2013)
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Conference Proceeding
Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
Lee, M.-J., Park, Y., Suh, D.-S., Lee, E.-H., Seo, S., Kim, D.-C., Jung, R., Kang, B.-S., Ahn, S.-E., Lee, C. B., Seo, D. H., Cha, Y.-K., Yoo, I.-K., Kim, J.-S., Park, B. H.
Published in Advanced materials (Weinheim) (19.11.2007)
Published in Advanced materials (Weinheim) (19.11.2007)
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Journal Article
HfZrO x -Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
Oh, Seungyeol, Kim, Taeho, Kwak, Myunghoon, Song, Jeonghwan, Woo, Jiyong, Jeon, Sanghun, Yoo, In Kyeong, Hwang, Hyunsang
Published in IEEE electron device letters (01.06.2017)
Published in IEEE electron device letters (01.06.2017)
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Journal Article
A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories
Lee, M.-J., Seo, S., Kim, D.-C., Ahn, S.-E., Seo, D. H., Yoo, I.-K., Baek, I.-G., Kim, D.-S., Byun, I.-S., Kim, S.-H., Hwang, I.-R., Kim, J.-S., Jeon, S.-H., Park, B. H.
Published in Advanced materials (Weinheim) (08.01.2007)
Published in Advanced materials (Weinheim) (08.01.2007)
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Journal Article
Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory
Seung Ryul Lee, Young-Bae Kim, Man Chang, Kyung Min Kim, Chang Bum Lee, Ji Hyun Hur, Gyeong-Su Park, Dongsoo Lee, Myoung-Jae Lee, Chang Jung Kim, U-In Chung, In-Kyeong Yoo, Kinam Kim
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
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Conference Proceeding
Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory
Ahn, S.-E., Lee, M.-J., Park, Y., Kang, B. S., Lee, C. B., Kim, K. H., Seo, S., Suh, D.-S., Kim, D.-C., Hur, J., Xianyu, W., Stefanovich, G., Yin, H., Yoo, I.-K., Lee, J.-H., Park, J.-B., Baek, I.-G., Park, B. H.
Published in Advanced materials (Weinheim) (05.03.2008)
Published in Advanced materials (Weinheim) (05.03.2008)
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Journal Article
Bi-layered RRAM with unlimited endurance and extremely uniform switching
Young-Bae Kim, Seung Ryul Lee, Dongsoo Lee, Chang Bum Lee, Man Chang, Ji Hyun Hur, Myoung-Jae Lee, Gyeong-Su Park, Chang Jung Kim, U-In Chung, In-Kyeong Yoo, Kinam Kim
Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
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Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
Conference Proceeding
Investigation of pyroelectric electron emission from monodomain lithium niobate single crystals
Bourim, El Mostafa, Moon, Chang-Wook, Lee, Seung-Woon, Kyeong Yoo, In
Published in Physica. B, Condensed matter (01.09.2006)
Published in Physica. B, Condensed matter (01.09.2006)
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Journal Article
Performance of threshold switching in chalcogenide glass for 3D stackable selector
Sungho Kim, Young-Bae Kim, Kyung Min Kim, Sae-Jin Kim, Seung Ryul Lee, Man Chang, Eunju Cho, Myoung-Jae Lee, Dongsoo Lee, Chang Jung Kim, U-In Chung, In-Kyeong Yoo
Published in 2013 Symposium on VLSI Technology (01.06.2013)
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Published in 2013 Symposium on VLSI Technology (01.06.2013)
Conference Proceeding
A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory
Lee, Myoung-Jae, Ahn, Seung-Eon, Lee, Chang Bum, Kim, Chang-Jung, Jeon, Sanghun, Chung, U-In, Yoo, In-Kyeong, Park, Gyeong-Su, Han, Seungwu, Hwang, In Rok, Park, Bae-Ho
Published in ACS applied materials & interfaces (23.11.2011)
Published in ACS applied materials & interfaces (23.11.2011)
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Journal Article
Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays
Myoung-Jae Lee, Dongsoo Lee, Hojung Kim, Hyun-Sik Choi, Jong-Bong Park, Hee Goo Kim, Young-Kwan Cha, U-In Chung, In-Kyeong Yoo, Kinam Kim
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Conference Proceeding
Relativistic Focus Condition for E-Beam Projection Lithography
Kim, Jung-Il, Wei, Yanyu, Park, Gun-Sik, Kim, Dong-Wook, Yoo, In-Kyeong
Published in Japanese Journal of Applied Physics (01.12.2004)
Published in Japanese Journal of Applied Physics (01.12.2004)
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Journal Article