Integration of III-V materials and Si-CMOS through double layer transfer process
Lee, Kwang Hong, Bao, Shuyu, Fitzgerald, Eugene, Tan, Chuan Seng
Published in Japanese Journal of Applied Physics (01.03.2015)
Published in Japanese Journal of Applied Physics (01.03.2015)
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Journal Article
Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
Lee, Kwang Hong, Bao, Shuyu, Wang, Bing, Wang, Cong, Yoon, Soon Fatt, Michel, Jurgen, Fitzgerald, Eugene A., Tan, Chuan Seng
Published in AIP advances (01.02.2016)
Published in AIP advances (01.02.2016)
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Journal Article
In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations
Wang, Yue, Lee, Kwang Hong, Loke, Wan Khai, Ben Chiah, Siau, Zhou, Xing, Yoon, Soon Fatt, Tan, Chuan Seng, Fitzgerald, Eugene
Published in AIP advances (01.11.2018)
Published in AIP advances (01.11.2018)
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Journal Article
Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
Kohen, David, Nguyen, Xuan Sang, Yadav, Sachin, Kumar, Annie, Made, Riko I, Heidelberger, Christopher, Gong, Xiao, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yeo, Yee Chia, Yoon, Soon Fatt, Fitzgerald, Eugene A.
Published in AIP advances (01.08.2016)
Published in AIP advances (01.08.2016)
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Journal Article
Strain relaxation of germanium-tin (GeSn) fins
Kang, Yuye, Huang, Yi-Chiau, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Masudy-Panah, Saeid, Dong, Yuan, Wu, Ying, Xu, Shengqiang, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published in AIP advances (01.02.2018)
Published in AIP advances (01.02.2018)
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Journal Article
Low-threshold optically pumped lasing in highly strained germanium nanowires
Bao, Shuyu, Kim, Daeik, Onwukaeme, Chibuzo, Gupta, Shashank, Saraswat, Krishna, Lee, Kwang Hong, Kim, Yeji, Min, Dabin, Jung, Yongduck, Qiu, Haodong, Wang, Hong, Fitzgerald, Eugene A., Tan, Chuan Seng, Nam, Donguk
Published in Nature communications (29.11.2017)
Published in Nature communications (29.11.2017)
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Journal Article
GeSn lateral p-i-n photodetector on insulating substrate
Xu, Shengqiang, Huang, Yi-Chiau, Lee, Kwang Hong, Wang, Wei, Dong, Yuan, Lei, Dian, Masudy-Panah, Saeid, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published in Optics express (25.06.2018)
Published in Optics express (25.06.2018)
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Journal Article
Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate
Wan Khai, Loke, Yue, Wang, Hanlin, Xie, Hui Teng, Tan, Shuyu, Bao, Kwang Hong, Lee, Lina, Khaw, Lee Eng Kian, Kenneth, Chuan Seng, Tan, Geok Ing, Ng, Fitzgerald, Eugene A., Soon Fatt, Yoon
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.10.2023)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.10.2023)
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Journal Article
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia
Published in Optics express (16.04.2018)
Published in Optics express (16.04.2018)
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Journal Article
CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate
Wang, Yue, Loke, Wan Khai, Gao, Yu, Lee, Kwang Hong, Kian Lee, Kenneth Eng, Gan, Chee Lip, Tan, Chuan Seng, Fitzgerald, Eugene A., Yoon, Soon Fatt
Published in IEEE transactions on electron devices (01.12.2021)
Published in IEEE transactions on electron devices (01.12.2021)
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Journal Article
Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate
Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published in IEEE transactions on electron devices (01.09.2018)
Published in IEEE transactions on electron devices (01.09.2018)
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Journal Article
A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers
Bao, Shuyu, Wang, Yue, Lina, Khaw, Zhang, Li, Wang, Bing, Sasangka, Wardhana Aji, Lee, Kenneth Eng Kian, Chua, Soo Jin, Michel, Jurgen, Fitzgerald, Eugene, Tan, Chuan Seng, Lee, Kwang Hong
Published in Journal of semiconductors (01.02.2021)
Published in Journal of semiconductors (01.02.2021)
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Journal Article
Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications
Son, Bongkwon, Lin, Yiding, Lee, Kwang Hong, Margetis, Joe, Kohen, David, Tolle, John, Tan, Chuan Seng
Published in IEEE photonics journal (01.06.2022)
Published in IEEE photonics journal (01.06.2022)
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Journal Article
Spiral Waveguides on Germanium-on-Silicon Nitride Platform for Mid-IR Sensing Applications
Li, Wei, Tan, Chuan Seng, Anantha, P., Lee, Kwang Hong, Qiu, Hao Dong, Guo, Xin, Goh, Simon Chun Kiat, Zhang, Lin, Wang, Hong, Soref, Richard A.
Published in IEEE photonics journal (01.06.2018)
Published in IEEE photonics journal (01.06.2018)
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Journal Article
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber
Lee, Kwang Hong, Jandl, Adam, Tan, Yew Heng, Fitzgerald, Eugene A., Tan, Chuan Seng
Published in AIP advances (01.09.2013)
Published in AIP advances (01.09.2013)
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Journal Article