Gate-first high-k/metal gate DRAM technology for low power and high performance products
Sung, Minchul, Jang, Se-Aug, Lee, Hyunjin, Ji, Yun-Hyuck, Kang, Jae-Il, Jung, Tae-O, Ahn, Tae-Hang, Son, Yun-Ik, Kim, Hyung-Chul, Lee, Sun-Woo, Lee, Seung-Mi, Lee, Jung-Hak, Baek, Seung-Beom, Doh, Eun-Hyup, Cho, Heung-Jae, Jang, Tae-Young, Jang, Il-Sik, Han, Jae-Hwan, Ko, Kyung-Bo, Lee, Yu-Jun, Shin, Su-Bum, Yu, Jae-Seon, Cho, Sung-Hyuk, Han, Ji-Hye, Kang, Dong-Kyun, Kim, Jinsung, Lee, Jae-Sang, Ban, Keun-Do, Yeom, Seung-Jin, Nam, Hyun-Wook, Lee, Dong-Kyu, Jeong, Mun-Mo, Kwak, Byungil, Park, Jeongsoo, Choi, Kisik, Park, Sung-Kye, Kwak, Noh-Jung, Hong, Sung-Joo
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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