Passivation of the GaP(111) surface by treatment in selenium vapors
Bezryadin, N. N., Kotov, G. I., Arsent’ev, I. N., Kuzubov, S. V., Vlasov, Yu. N., Panin, G. A., Kortunov, A. V.
Published in Technical physics letters (01.02.2014)
Published in Technical physics letters (01.02.2014)
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Journal Article
Interface reconstruction in the Ga2Se3/GaAs(100) and In2Se3/InAs(100) nanoheterostructures
Bezryadin, N. N., Kotov, G. I., Kuzubov, S. V., Boldyreva, Ya. A., Agapov, B. L.
Published in Crystallography reports (01.05.2011)
Published in Crystallography reports (01.05.2011)
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Journal Article
Nanolayer of the A 2 III B 3 VI (111) phase with ordered cation vacancies on GaAs(111) and InAs(111)
Bezryadin, N. N., Kotov, G. I., Kuzubov, S. V., Agapov, B. L.
Published in Crystallography reports (01.09.2010)
Published in Crystallography reports (01.09.2010)
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Journal Article
Passivating gallium arsenide surface by gallium chalcogenide
Bezryadin, N. N., Kotov, G. I., Kuzubov, S. V., Arsent’ev, I. N., Tarasov, I. S., Starodubtsev, A. A., Sysoev, A. B.
Published in Technical physics letters (01.05.2008)
Published in Technical physics letters (01.05.2008)
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Journal Article
Electron microscopy investigation of GaAs(100)-(Ga2Se3)-GaAs nanostructures
Agapov, B. L., Bezryadin, N. N., Synorov, Yu. V., Kotov, G. I., Tatokhin, E. A., Starodubtsev, A. A., Kuzubov, S. V.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.12.2007)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.12.2007)
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