Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress
Tapajna, M., Hilt, O., Bahat-Treidel, E., Wurfl, J., Kuzmik, J.
Published in IEEE electron device letters (01.04.2016)
Published in IEEE electron device letters (01.04.2016)
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Journal Article
Electron transport properties in thin InN layers grown on InAlN
Stoklas, R., Hasenöhrl, S., Dobročka, E., Gucmann, F., Kuzmík, J.
Published in Materials science in semiconductor processing (01.03.2023)
Published in Materials science in semiconductor processing (01.03.2023)
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Journal Article
Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems
Dobročka, E., Hasenöhrl, S., Chauhan, P., Kuzmík, J.
Published in Applied surface science (15.12.2018)
Published in Applied surface science (15.12.2018)
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Journal Article
Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
Matys, M., Nishiguchi, K., Adamowicz, B., Kuzmik, J., Hashizume, T.
Published in Journal of applied physics (14.12.2018)
Published in Journal of applied physics (14.12.2018)
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Journal Article
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Kuzmík, J.
Published in Applied surface science (31.12.2017)
Published in Applied surface science (31.12.2017)
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Journal Article
InN/InAlN heterostructures for new generation of fast electronics
Kuzmik, J., Stoklas, R., Hasenöhrl, S., Dobročka, E., Kučera, M., Eliáš, P., Gucmann, F., Gregušová, D., Haščík, Š., Kaleta, A., Chauvat, M. P., Kret, S., Ruterana, P.
Published in Journal of applied physics (28.06.2024)
Published in Journal of applied physics (28.06.2024)
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Journal Article
Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs
Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., Kuzmík, J.
Published in Applied surface science (30.10.2020)
Published in Applied surface science (30.10.2020)
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Journal Article
Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors
Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J. -F., Grandjean, N., Kuzmík, J.
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Journal Article
Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition
Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J.
Published in Applied surface science (15.12.2018)
Published in Applied surface science (15.12.2018)
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Journal Article
Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures
Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., Kuzmík, J.
Published in Materials science in semiconductor processing (01.03.2019)
Published in Materials science in semiconductor processing (01.03.2019)
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Journal Article
InAlN/GaN HEMTs: a first insight into technological optimization
Kuzmik, J., Kostopoulos, A., Konstantinidis, G., Carlin, J.-F., Georgakilas, A., Pogany, D.
Published in IEEE transactions on electron devices (01.03.2006)
Published in IEEE transactions on electron devices (01.03.2006)
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Journal Article
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
Kuzmik, J., Pozzovivo, G., Ostermaier, C., Strasser, G., Pogany, D., Gornik, E., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N.
Published in Journal of applied physics (15.12.2009)
Published in Journal of applied physics (15.12.2009)
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Journal Article
Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors
MOLNAR, M, DONOVAL, D, KUZMIK, J, MAREK, J, CHVALA, A, PRIBYTNY, P, MIKOLASEK, M, RENDEK, K, PALANKOVSKI, V
Published in Applied surface science (01.09.2014)
Published in Applied surface science (01.09.2014)
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Journal Article
Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods
Kuzmík, J., Bychikhin, S., Pogany, D., Gaquière, C., Pichonat, E., Morvan, E.
Published in Journal of applied physics (01.03.2007)
Published in Journal of applied physics (01.03.2007)
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Journal Article
Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions
Adikimenakis, A., Androulidaki, M., Foundoulaki Salhin, E., Tsagaraki, K., Doundoulakis, G., Kuzmik, J., Georgakilas, A.
Published in Journal of physics. Conference series (01.05.2019)
Published in Journal of physics. Conference series (01.05.2019)
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Journal Article
MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs
Abermann, S, Pozzovivo, G, Kuzmik, J, Strasser, G, Pogany, D, Carlin, J-F, Grandjean, N, Bertagnolli, E
Published in Semiconductor science and technology (01.12.2007)
Published in Semiconductor science and technology (01.12.2007)
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