Embedded ferroelectric memory technology with completely encapsulated hydrogen barrier structure
Nagano, Y., Mikawa, T., Kutsunai, T., Natsume, S., Tatsunari, T., Ito, T., Noma, A., Nasu, T., Hayashi, S., Hirano, H., Gohou, Y., Judai, Y., Fujii, E.
Published in IEEE transactions on semiconductor manufacturing (01.02.2005)
Published in IEEE transactions on semiconductor manufacturing (01.02.2005)
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Journal Article
Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family)
Fujii, E., Otsuki, T., Judai, Y., Shimada, Y., Azuma, M., Uemoto, Y., Nagano, Y., Nasu, T., Izutsu, Y., Matsuda, A., Nakao, K., Tanaka, K., Hirano, K., Ito, T., Mikawa, T., Kutsunai, T., McMillan, L.D., Paz de Araujo, C.A.
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
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Conference Proceeding
A highly reliable ferroelectric memory technology with SrBi2 Ta2O9-based material and metal covering cell structure
Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.06.2001)
Published in IEEE transactions on electron devices (01.06.2001)
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Journal Article
A highly reliable ferroelectric memory technology with SrBi/sub 2/Ta/sub 2/O/sub 9/-based material and metal covering cell structure
Fajii, E., Judai, Y., Ito, T., Kutsunai, T., Nagano, Y., Noma, A., Nasu, T., Izutsu, Y., Mikawa, T., Yasuoka, H., Azuma, M., Shimada, Y., Sasai, Y., Sato, K., Otsuki, T.
Published in IEEE transactions on electron devices (01.06.2001)
Published in IEEE transactions on electron devices (01.06.2001)
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Journal Article
A highly reliable ferroelectric memory technology with SrBi sub(2)Ta sub(2)O sub(9 )-based material and metal covering cell structure
Fujii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.06.2001)
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Published in IEEE transactions on electron devices (01.06.2001)
Journal Article
A highly reliable ferroelectric memory technology with SrBi)2)Ta)2)O)9)-based material and metal covering cellstructure
Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.06.2001)
Published in IEEE transactions on electron devices (01.06.2001)
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Journal Article
A highly reliable ferroelectric memory technology with SrBi sub(2 )Ta sub(2)O sub(9)-bas ed material and metal covering cell structure
Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.01.2001)
Published in IEEE transactions on electron devices (01.01.2001)
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Journal Article
0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V
Nagano, Y., Mikawa, T., Kutsunai, T., Hayashi, S., Nasu, T., Natsume, S., Tatsunari, T., Ito, T., Goto, S., Yano, H., Noma, A., Nagahashi, K., Miki, T., Sakagami, M., Izutsu, Y., Nakakuma, T., Hirano, H., Iwanari, S., Murakuki, Y., Yamaoka, K., Goho, Y., Judai, Y., Fujii, E., Sato, K.
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)
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Conference Proceeding