Arsenic atomic layer doping in Si using AsH3
Yamamoto, Yuji, Kurps, Rainer, Murota, Junichi, Tillack, Bernd
Published in Solid-state electronics (01.08.2015)
Published in Solid-state electronics (01.08.2015)
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Journal Article
Phosphorus atomic layer doping in Ge using RPCVD
Yamamoto, Yuji, Kurps, Rainer, Mai, Christian, Costina, Ioan, Murota, Junichi, Tillack, Bernd
Published in Solid-state electronics (01.05.2013)
Published in Solid-state electronics (01.05.2013)
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Journal Article
Conference Proceeding
B atomic layer doping of Ge
Yamamoto, Yuji, Köpke, Klaus, Kurps, Rainer, Murota, Junichi, Tillack, Bernd
Published in Thin solid films (2010)
Published in Thin solid films (2010)
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Journal Article
Conference Proceeding
SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay
HEINEMANN, Bernd, RÜCKER, Holger, TRUSCH, Andreas, WOLANSKY, Dirk, YAMAMOTO, Yuji, BARTH, Rainer, DREWS, Jürgen, FURSENKO, Oksana, GRABOLLA, Thomas, KURPS, Rainer, MARSCHMEYER, Steffen, SCHEIT, Alexander, SCHMIDT, Detlef
Published in IEEE electron device letters (2014)
Published in IEEE electron device letters (2014)
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Journal Article
SiGe p-n-p HBTs With 265-GHz f max, 175-GHz f T, and 3.65-ps Gate Delay
Heinemann, Bernd, Rucker, Holger, Barth, Rainer, Drews, Jurgen, Fursenko, Oksana, Grabolla, Thomas, Kurps, Rainer, Marschmeyer, Steffen, Scheit, Alexander, Schmidt, Detlef, Trusch, Andreas, Wolansky, Dirk, Yamamoto, Yuji
Published in IEEE electron device letters (01.08.2014)
Published in IEEE electron device letters (01.08.2014)
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Journal Article
Phosphorus Profile Control in Ge by Si Delta Layers
Yamamoto, Yuji, Zaumseil, Peter, Kurps, Rainer, Murota, Junichi, Tillack, Bernd
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
Selective vapor phase etching of SiGe by HCl in a RPCVD reactor
Yamamoto, Yuji, Köpke, Klaus, Kurps, Rainer, Tillack, Bernd
Published in Applied surface science (30.07.2008)
Published in Applied surface science (30.07.2008)
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Journal Article
Conference Proceeding
P doping control during SiGe:C epitaxy
Yamamoto, Yuji, Tillack, Bernd, Köpke, Klaus, Kurps, Rainer
Published in Thin solid films (05.06.2006)
Published in Thin solid films (05.06.2006)
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Journal Article
Conference Proceeding
Dopant Diffusion in SiGeC Alloys
Rucker, Holger, Heinemann, Bernd, Kurps, Rainer, Yamamoto, Yuji
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
Arsenic atomic layer doping in Si using AsH3
Yamamoto, Yuji, Kurps, Rainer, Murota, Juichi, Tillack, Bernd
Published in 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2014)
Published in 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2014)
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Conference Proceeding
Phosphorus Profile Control in Ge by Si Delta Layers
Yamamoto, Yuji, Zaumseil, Peter, Kurps, Rainer, Murota, Junichi, Tillack, Bernd
Published in Meeting abstracts (Electrochemical Society) (04.06.2012)
Published in Meeting abstracts (Electrochemical Society) (04.06.2012)
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Journal Article
Phosphorus Atomic Layer Doping in Ge Using RPCVD
Yamamoto, Y., Kurps, R., Mai, C., Costina, I., Murota, J., Tillack, B.
Published in 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2012)
Published in 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2012)
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Conference Proceeding
Dopant Diffusion in SiGeC Alloys
Rucker, Holger, Heinemann, Bernd, Kurps, Rainer, Yamamoto, Yuji
Published in Meeting abstracts (Electrochemical Society) (30.06.2006)
Published in Meeting abstracts (Electrochemical Society) (30.06.2006)
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Journal Article
Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer
LIU JING P, KRUGER DIETMAR, GORYACHKO ANDRIY, KURPS RAINER, OSTEN HANS-JORG
Year of Publication 13.10.2005
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Year of Publication 13.10.2005
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