SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
Heinemann, B, Barth, R, Bolze, D, Drews, J, Fischer, G G, Fox, A, Fursenko, O, Grabolla, T, Haak, U, Knoll, D, Kurps, R, Lisker, M, Marschmeyer, S, Rücker, H, Schmidt, D, Schmidt, J, Schubert, M A, Tillack, B, Wipf, C, Wolansky, D, Yamamoto, Y
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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Conference Proceeding
Oxygen beam SIMS depth profiling of Si1−xGex layers: transient processes
Krüger, D., Efremov, A. A., Murota, J., Kurps, R., Bugiel, E., Tillack, B., Romanova, G. Ph
Published in Surface and interface analysis (01.08.2002)
Published in Surface and interface analysis (01.08.2002)
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Journal Article
Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology
Winkler, W, Borngräber, J, Heinemann, B, Rücker, H, Barth, R, Bauer, J, Bolze, D, Drews, J, Ehwald, K.-E, Grabolla, T, Haak, U, Höppner, W, Knoll, D, Krüger, D, Kuck, B, Kurps, R, Marschmeyer, M, Richter, H, Schley, P, Schmidt, D, Scholz, R, Tillack, B, Wolansky, D, Wulf, H.-E, Yamamoto, Y, Zaumseil, P
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
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Conference Proceeding
Influence of fluorine contamination on reliability of thin gate oxides
Krüger, D., Gaworzewski, P., Kurps, R., Pomplun, K.
Published in Microelectronics and reliability (01.08.2000)
Published in Microelectronics and reliability (01.08.2000)
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Journal Article
Novel collector design for high-speed SiGe:C HBTs
Heinemann, B., Rucker, H., Barth, R., Bauer, J., Bolze, D., Bugiel, E., Drews, J., Ehwald, K.-E., Grabolla, T., Haak, U., Hoppner, W., Knoll, D., Kruger, D., Kuck, B., Kurps, R., Marschmeyer, M., Richter, H.H., Schley, P., Schmidt, D., Scholz, R., Tillack, B., Winkler, W., Wolnsky, D., Wulf, H.-E., Yamamoto, Y., Zaumseil, P.
Published in Digest. International Electron Devices Meeting (2002)
Published in Digest. International Electron Devices Meeting (2002)
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Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations
Zeindl, H.P., Nilsson, S., Klatt, J., Krüger, D., Kurps, R.
Published in Journal of crystal growth (01.12.1995)
Published in Journal of crystal growth (01.12.1995)
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Conference Proceeding
Influence of interdiffusion and surfactants on Si/SiGe heterointerfaces
Zeindl, H.P., Nilsson, S., Jagdhold, U., Klatt, J., Kurps, R., Krüger, D., Bugiel, E.
Published in Applied surface science (01.08.1996)
Published in Applied surface science (01.08.1996)
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Conference Proceeding
Phosphorus segregation at polysilicon-silicon interfaces from in situ P spike-doped silicon films
Kruger, D, Gaworzewski, P, Kurps, R, Schlote, J
Published in Semiconductor science and technology (01.03.1995)
Published in Semiconductor science and technology (01.03.1995)
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Journal Article
Antimony as Substitute for Arsenic to Eliminate Enhanced Diffusion Effects
Rucker, H., Heinemann, B., Barth, R., Bolze, D., Melnik, V., Kurps, R., Kruger, D.
Published in 32nd European Solid-State Device Research Conference (2002)
Published in 32nd European Solid-State Device Research Conference (2002)
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Conference Proceeding
Shallow junction formation by phosphorus diffusion from in situ spike-doped chemical vapor deposited amorphous silicon
Krüger, D., Schlote, J., Röpke, W., Kurps, R., Quick, Ch
Published in Microelectronic engineering (01.04.1995)
Published in Microelectronic engineering (01.04.1995)
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Journal Article
High-speed, waveguide Ge PIN photodiodes for a photonic BiCMOS process
Lischke, S., Knoll, D., Zimmermann, L., Scheit, A., Mai, C., Trusch, A., Voigt, K., Kroh, M., Kurps, R., Ostrovskyy, P., Yamamoto, Y., Korndorfer, F., Peczek, A., Winzer, G., Tillack, B.
Published in 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.09.2014)
Published in 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.09.2014)
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Conference Proceeding
A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module
Knoll, D., Ehwald, K.E., Heinemann, B., Fox, A., Blum, K., Rucker, H., Furnhammer, F., Senapati, B., Barth, R., Haak, U., Hoppner, W., Drews, J., Kurps, R., Marschmeyer, S., Richter, H.H., Grabolla, T., Kuck, B., Fursenko, O., Schley, P., Scholz, R., Tillack, B., Yamamoto, Y., Kopke, K., Wulf, H.E., Wolansky, D., Winkler, W.
Published in Digest. International Electron Devices Meeting (2002)
Published in Digest. International Electron Devices Meeting (2002)
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Conference Proceeding
Phosphorus Profile Control in Ge by Si Delta Layers
Yamamoto, Yuji, Zaumseil, Peter, Kurps, Rainer, Murota, Junichi, Tillack, Bernd
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
P doping control during SiGe:C epitaxy
Yamamoto, Yuji, Tillack, Bernd, Köpke, Klaus, Kurps, Rainer
Published in Thin solid films (05.06.2006)
Published in Thin solid films (05.06.2006)
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A low-parasitic collector construction for high-speed SiGe:C HBTs
Heinemann, B., Barth, R., Bolze, D., Drews, J., Formanek, P., Grabolla, T., Haak, U., Hoppner, W., Kopke, D.K., Kuck, B., Kurps, R., Marschmeyer, S., Richter, H.H., Rucker, H., Schley, P., Schmidt, D., Winkler, W., Wolansky, D., Wulf, H.E., Yamamoto, Y.
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
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Conference Proceeding
Latchup immunity and well profile design by a deep carbon-doped layer
Heinemann, B., Barth, R., Bolze, D., Ehwald, K.-E., Knoll, D., Kruger, D., Kurps, R., Rucker, H., Schley, P., Tillack, B., Wolansky, D.
Published in International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) (2000)
Published in International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) (2000)
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Conference Proceeding
Dopant Diffusion in SiGeC Alloys
Rucker, Holger, Heinemann, Bernd, Kurps, Rainer, Yamamoto, Yuji
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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