2.8-GB/s-write and 670-MB/s-erase operations of a 3D vertical chain-cell-type phase-change-memory array
Kurotsuchi, K., Sasago, Y., Yoshitake, H., Minemura, H., Anzai, Y., Fujisaki, Y., Takahama, T., Takahashi, T., Mine, T., Shima, A., Fujisaki, K., Kobayashi, T.
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
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Journal Article
Phase change RAM operated with 1.5-V CMOS as low cost embedded memory
Osada, K., Kawahara, T., Takemura, R., Kitai, N., Takaura, N., Matsuzaki, N., Kurotsuchi, K., Moriya, H., Moniwa, M.
Published in Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005 (2005)
Published in Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005 (2005)
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Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention
Morikawa, T., Moriya, H., Iwasaki, T., Matsuoka, M., Nitta, F., Moniwa, M., Koga, T., Takaura, N., Kurotsuchi, K., Kinoshita, M., Matsuzaki, N., Matsui, Y., Fujisaki, Y., Hanzawa, S., Kotabe, A., Terao, M.
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
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Conference Proceeding
Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming gigabyte-per-second throughput
Sasago, Y., Kinoshita, M., Minemura, H., Anzai, Y., Tai, M., Kurotsuchi, K., Morita, S., Takahashi, T., Takahama, T., Morimoto, T., Mine, T., Shima, A., Kobayashi, T.
Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
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Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
Conference Proceeding
Vision-based autonomous micro-air-vehicle control for odor source localization
Kurotsuchi, K., Tai, M., Takahashi, H.
Published in 2016 23rd International Conference on Mechatronics and Machine Vision in Practice (M2VIP) (01.11.2016)
Published in 2016 23rd International Conference on Mechatronics and Machine Vision in Practice (M2VIP) (01.11.2016)
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Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode
Sasago, Y., Kinoshita, M., Morikawa, T., Kurotsuchi, K., Hanzawa, S., Mine, T., Shima, A., Fujisaki, Y., Kume, H., Moriya, H., Takaura, N., Torii, K.
Published in 2009 Symposium on VLSI Technology (01.06.2009)
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Published in 2009 Symposium on VLSI Technology (01.06.2009)
Conference Proceeding
Measurement method for transient programming current of 1T1R phase-change memory
Kurotsuchi, K., Takaura, N., Matsuzaki, N., Matsui, Y., Tonomura, O., Fujisaki, Y., Kitai, N., Takemura, R., Osada, K., Hanzawa, S., Moriya, H., Iwasaki, T., Kawahara, T., Terao, M., Matsuoka, M., Moniwa, M.
Published in 2006 IEEE International Conference on Microelectronic Test Structures (2006)
Published in 2006 IEEE International Conference on Microelectronic Test Structures (2006)
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Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories
Matsui, Y., Kurotsuchi, K., Tonomura, O., Morikawa, T., Kinoshita, M., Fujisaki, Y., Matsuzaki, N., Hanzawa, S., Terao, M., Takaura, N., Moriya, H., Iwasaki, T., Moniwa, M., Koga, T.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations
Takaura, N., Terao, M., Kurotsuchi, K., Yamauchi, T., Tonomura, O., Hanaoka, Y., Takemura, R., Osada, K., Kawahara, T., Matsuoka, H.
Published in IEEE International Electron Devices Meeting 2003 (2003)
Published in IEEE International Electron Devices Meeting 2003 (2003)
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Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-/spl mu/A standard 0.13/spl mu/m CMOS operations
Matsuzaki, N., Kurotsuchi, K., Matsui, Y., Tonomura, O., Yamamoto, N., Fujisaki, Y., Kitai, N., Takemura, R., Osada, K., Hanzawa, S., Moriya, H., Iwasaki, T., Kawahara, T., Takaura, N., Terao, M., Matsuoka, M., Moniwa, M.
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
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