High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications
Van Cuong, Vuong, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Miyazaki, Takamichi, Kuroki, Shin-Ichiro
Published in Thin solid films (01.01.2019)
Published in Thin solid films (01.01.2019)
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Journal Article
500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC
Van Cuong, Vuong, Sato, Tadashi, Miyazaki, Takamichi, Meguro, Tatsuya, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Kuroki, Shin-Ichiro
Published in Japanese Journal of Applied Physics (01.03.2022)
Published in Japanese Journal of Applied Physics (01.03.2022)
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Journal Article
Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges
Takeyama, Akinori, Kuroki, Shin Ichiro, Ohshima, Takeshi, Shimizu, Keigo, Makino, Takahiro, Yamazaki, Yuichi, Tanaka, Yasunori
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC
Van Cuong, Vuong, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Miyazaki, Takamichi, Kuroki, Shin-Ichiro
Published in Japanese Journal of Applied Physics (01.11.2019)
Published in Japanese Journal of Applied Physics (01.11.2019)
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Journal Article
Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC
Muraoka, Kosuke, Ishikawa, Seiji, Sezaki, Hiroshi, Tomonori, Maeda, Yasuno, Satoshi, Koganezawa, Tomoyuki, Kuroki, Shin-Ichiro
Published in Materials science in semiconductor processing (01.01.2021)
Published in Materials science in semiconductor processing (01.01.2021)
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Journal Article
CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC
Van Cuong, Vuong, Miyazaki, Takamichi, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Kuroki, Shin-Ichiro
Published in Japanese Journal of Applied Physics (29.04.2020)
Published in Japanese Journal of Applied Physics (29.04.2020)
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Journal Article
Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using Alkaline earth metal
Muraoka, Kosuke, Sezaki, Hiroshi, Ishikawa, Seiji, Maeda, Tomonori, Sato, Tadashi, Kikkawa, Takamaro, Kuroki, Shin-Ichiro
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Low resistance Ti-Si-C ohmic contacts for 4H-SiC power devices using laser annealing
De Silva, Milantha, Kawasaki, Teruhisa, Kikkawa, Takamaro, Kuroki, Shin-Ichiro
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
4H-SiC pseudo-CMOS logic inverters for harsh environment electronics
Kuroki, S.-I, Kurose, T., Nagatsuma, H., Ishikawa, S., Maeda, T., Sezaki, H., Kikkawa, T., Makino, T., Ohshima, T., Östling, M., Zetterling, C.-M
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors
Meguro, Tatsuya, Takeyama, Akinori, Ohshima, Takeshi, Tanaka, Yasunori, Kuroki, Shin-Ichiro
Published in IEEE electron device letters (01.10.2022)
Published in IEEE electron device letters (01.10.2022)
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Journal Article
Integrated 4H-SiC Photosensors with Active Pixel Sensor-type Circuits for MGy-class Radiation Hardened CMOS UV Image Sensor
Tsutsumi, Masayuki, Meguro, Tatsuya, Takeyama, Akinori, Ohshima, Takeshi, Tanaka, Yasunori, Kuroki, Shin-Ichiro
Published in IEEE electron device letters (01.01.2023)
Published in IEEE electron device letters (01.01.2023)
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Journal Article
Characterization of Grapho-Silicidation on n+ 4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices
De Silva, Milantha, Maeda, Tomonori, Ishikawa, Seiji, Sezaki, Hiroshi, Miyazaki, Takamichi, Kikkawa, Takamaro, Kuroki, Shin-Ichiro
Published in ECS journal of solid state science and technology (01.01.2016)
Published in ECS journal of solid state science and technology (01.01.2016)
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Journal Article
4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays
Meguro, Tatsuya, Tsutsumi, Masayuki, Takeyama, Akinori, Ohshima, Takeshi, Tanaka, Yasunori, Kuroki, Shin-Ichiro
Published in Applied physics express (01.08.2024)
Published in Applied physics express (01.08.2024)
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Journal Article