Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer
Kashio, Norihide, Hoshi, Takuya, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki
Published in IEEE electron device letters (01.07.2015)
Published in IEEE electron device letters (01.07.2015)
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Journal Article
Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs
Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki, Kohtoku, Masaki
Published in Journal of crystal growth (01.06.2014)
Published in Journal of crystal growth (01.06.2014)
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Journal Article
Low-Cost Optoelectronic Self-Injection-Locked Oscillators
Kwang-Hyun Lee, Jae-Young Kim, Woo-Young Choi, Kamitsuna, H., Ida, M., Kurishima, K.
Published in IEEE photonics technology letters (01.07.2008)
Published in IEEE photonics technology letters (01.07.2008)
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Journal Article
Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal
Fukai, Yoshino K., Kurishima, Kenji, Kashio, Norihide, Ida, Minoru, Yamahata, Shoji, Enoki, Takatomo
Published in Microelectronics and reliability (01.04.2009)
Published in Microelectronics and reliability (01.04.2009)
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Journal Article
Monolithic Integration of InP HBTs and Uni-Traveling-Carrier Photodiodes Using Nonselective Regrowth
Kashio, N., Kurishima, K., Sano, K., Ida, M., Watanabe, N., Fukuyama, H.
Published in IEEE transactions on electron devices (01.07.2007)
Published in IEEE transactions on electron devices (01.07.2007)
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Journal Article
C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE
Oda, Yasuhiro, Watanabe, Noriyuki, Uchida, Masahiro, Kurishima, Kenji, Kobayashi, Takashi
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
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Journal Article
Conference Proceeding
High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
Kurishima, Kenji, Ida, Minoru, Ishii, Kiyoshi, Watanabe, Noriyuki
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
Kenji Kurishima, Kenji Kurishima, Shoji Yamahata, Shoji Yamahata, Hiroki Nakajima, Hiroki Nakajima, Hiroshi Ito, Hiroshi Ito, Yasunobu Ishii, Yasunobu Ishii
Published in Japanese Journal of Applied Physics (01.03.1998)
Published in Japanese Journal of Applied Physics (01.03.1998)
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Journal Article
56-Gb/s Optical Transmission Performance of an InP HBT PAM4 Driver Compensating for Nonlinearity of Extinction Curve of EAM
Kishi, Toshiki, Nagatani, Munehiko, Kanazawa, Shigeru, Kobayashi, Wataru, Yamazaki, Hiroshi, Ida, Minoru, Kurishima, Kenji, Nogawa, Masafumi, Kimura, Shunji, Nosaka, Hideyuki
Published in Journal of lightwave technology (01.01.2017)
Published in Journal of lightwave technology (01.01.2017)
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Journal Article
Ultrahigh-speed InP/InGaAs double-heterostructure bipolar transistors and analyses of their operation
MATSUOKA, Y, VAMAHATA, S, KURISHIMA, K, ITO, H
Published in Japanese Journal of Applied Physics (01.11.1996)
Published in Japanese Journal of Applied Physics (01.11.1996)
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Journal Article
Over 450-GHz \(f_{\mathit {t}}\) and \(f_{\mathrm {max}}\) InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO sub(2) Sidewall Spacers
Kashio, Norihide, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki
Published in IEEE transactions on electron devices (01.10.2014)
Published in IEEE transactions on electron devices (01.10.2014)
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Journal Article
Over 450-GHz \(f_{\mathit {t}}\) and \(f_{\mathrm {max}}\) InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO2 Sidewall Spacers
Kashio, Norihide, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki
Published in IEEE transactions on electron devices (01.10.2014)
Published in IEEE transactions on electron devices (01.10.2014)
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Journal Article
Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous \(f\) and \(f}\) of Over 500 GHz
Kashio, Norihide, Hoshi, Takuya, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki
Published in IEEE electron device letters (01.12.2014)
Published in IEEE electron device letters (01.12.2014)
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Journal Article
Carbon incorporation in InGaAs grown on (311)A oriented substrates by metalorganic chemical vapor deposition
Ito, Hiroshi, Kurishima, Kenji, Watanabe, Noriyuki
Published in Journal of crystal growth (01.02.1996)
Published in Journal of crystal growth (01.02.1996)
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Journal Article
Design and Fabrication of Mixed Electronics-Optics Modulator for Dual-Carrier QPSK Generation
Kikuchi, Kiyofumi, Nosaka, Hideyuki, Yamazaki, Hiroshi, Nagatani, Munehiko, Goh, Takashi, Kurishima, Kenji, Saida, Takashi
Published in Journal of lightwave technology (01.08.2015)
Published in Journal of lightwave technology (01.08.2015)
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Journal Article