Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements
Kirste, Ronny, Hoffmann, Marc P., Tweedie, James, Bryan, Zachary, Callsen, Gordon, Kure, Thomas, Nenstiel, Christian, Wagner, Markus R., Collazo, Ramón, Hoffmann, Axel, Sitar, Zlatko
Published in Journal of applied physics (14.03.2013)
Published in Journal of applied physics (14.03.2013)
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Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
Nippert, Felix, Karpov, Sergey, Pietzonka, Ines, Galler, Bastian, Wilm, Alexander, Kure, Thomas, Nenstiel, Christian, Callsen, Gordon, Straßburg, Martin, Lugauer, Hans-Jürgen, Hoffmann, Axel
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
Kirste, Ronny, Collazo, Ramón, Callsen, Gordon, Wagner, Markus R., Kure, Thomas, Sebastian Reparaz, Juan, Mita, Seji, Xie, Jinqiao, Rice, Anthony, Tweedie, James, Sitar, Zlatko, Hoffmann, Axel
Published in Journal of applied physics (01.11.2011)
Published in Journal of applied physics (01.11.2011)
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Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells
Nippert, Felix, Nirschl, Anna, Schulz, Tobias, Callsen, Gordon, Pietzonka, Ines, Westerkamp, Steffen, Kure, Thomas, Nenstiel, Christian, Strassburg, Martin, Albrecht, Martin, Hoffmann, Axel
Published in Journal of applied physics (07.06.2016)
Published in Journal of applied physics (07.06.2016)
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