The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs
Yang, Tsung-Ying, Wu, Sih-Rong, Wu, Jui-Sheng, Liang, Yan-Kui, Kuo, Mei-Yan, Iwai, Hiroshi, Chang, Edward-Yi
Published in IEEE transactions on electron devices (01.06.2024)
Published in IEEE transactions on electron devices (01.06.2024)
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Journal Article
A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications
Yang, Tsung-Ying, Huang, Huuan-Yao, Liang, Yan-Kui, Wu, Jui-Sheng, Kuo, Mei-Yan, Chang, Kuan-Pang, Hsu, Heng-Tung, Chang, Edward-Yi
Published in IEEE electron device letters (01.10.2022)
Published in IEEE electron device letters (01.10.2022)
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Journal Article
Study of Silicon Nitride Etched by Cyclic Atomic Layer Etching
Yang, Tsung-Ying, Kuo, Mei-Yan, Chang, Edward-Yi
Published in 2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA) (14.10.2022)
Published in 2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA) (14.10.2022)
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