Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
Mulaosmanovic, H., Slesazeck, S., Ocker, J., Pesic, M., Muller, S., Flachowsky, S., Muller, J., Polakowski, P., Paul, J., Jansen, S., Kolodinski, S., Richter, C., Piontek, S., Schenk, T., Kersch, A., Kunneth, C., van Bentum, R., Schroder, U., Mikolajick, T.
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Journal Article
Impact of field cycling on HfO2 based non-volatile memory devices
Schroeder, U., Pesic, M., Schenk, T., Mulaosmanovic, H., Slesazeck, S., Ocker, J., Richter, C., Yurchuk, E., Khullar, K., Muller, J., Polakowski, P., Grimley, E. D., LeBeau, J. M., Flachowsky, S., Jansen, S., Kolodinski, S., van Bentum, R., Kersch, A., Kunneth, C., Mikolajick, T.
Published in 2016 46th European Solid-State Device Research Conference (ESSDERC) (01.09.2016)
Published in 2016 46th European Solid-State Device Research Conference (ESSDERC) (01.09.2016)
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