Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography
Kunimune, Yorinobu, Shimada, Yasuhiro, Sakurai, Yusuke, Inoue, Masao, Nishida, Akio, Han, Bin, Tu, Yuan, Takamizawa, Hisashi, Shimizu, Yasuo, Inoue, Koji, Yano, Fumiko, Nagai, Yasuyoshi, Katayama, Toshiharu, Ide, Takashi
Published in AIP advances (01.04.2016)
Published in AIP advances (01.04.2016)
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Journal Article
The effect of microstructures on the electrical properties of Cr–Si–C thin film resistors
Ito, Nozomi, Maekawa, Kazuyoshi, Kunimune, Yorinobu, Hasegawa, Eiji, Abe, Kenichiro, Shiraishi, Nobuhito, Takahashi, Yuji, Tonegawa, Takashi, Tsuchiya, Yasuaki, Inoue, Masao
Published in Japanese Journal of Applied Physics (01.08.2022)
Published in Japanese Journal of Applied Physics (01.08.2022)
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Journal Article
Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal–Oxide–Semiconductor Devices Using Ladder-Oxide Film
Yokoyama, Takashi, Shiba, Kazutoshi, Nishizawa, Atsushi, Nagahara, Seiji, Yamato, Hidekazu, Usami, Tatsuya, Watanabe, Susumu, Nakabeppu, Kenichi, Kunimune, Yorinobu, Sekine, Makoto, Oda, Noriaki, Horiuchi, Tadahiko
Published in Japanese Journal of Applied Physics (2003)
Published in Japanese Journal of Applied Physics (2003)
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Journal Article
Lateral Diffusion Distance Measurement of 40–80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method
Kunimune, Yorinobu, Nishio, Naoharu, Kikuchi, NoriyukiKodama, Toda, Takeshi, Mineji, Akira, Shishiguchi, Seiichi, Saito, Shuichi
Published in Japanese Journal of Applied Physics (01.04.1999)
Published in Japanese Journal of Applied Physics (01.04.1999)
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Journal Article
High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO2/SiN/SiO2 films with thermal treatment
Sakurai, Yusuke, Kunimune, Yorinobu, Inoue, Masao, Maruyama, Yoshiki, Nishida, Akio, Ide, Takashi
Published in Japanese Journal of Applied Physics (01.08.2014)
Published in Japanese Journal of Applied Physics (01.08.2014)
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Journal Article
High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO 2 /SiN/SiO 2 films with thermal treatment
Sakurai, Yusuke, Kunimune, Yorinobu, Inoue, Masao, Maruyama, Yoshiki, Nishida, Akio, Ide, Takashi
Published in Japanese Journal of Applied Physics (01.08.2014)
Published in Japanese Journal of Applied Physics (01.08.2014)
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Journal Article
High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO sub(2)/SiN/SiO sub(2) films with thermal treatment
Sakurai, Yusuke, Kunimune, Yorinobu, Inoue, Masao, Maruyama, Yoshiki, Nishida, Akio, Ide, Takashi
Published in Japanese Journal of Applied Physics (01.01.2014)
Published in Japanese Journal of Applied Physics (01.01.2014)
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Journal Article
Quantitative analysis of hydrogen in SiO{sub 2}/SiN/SiO{sub 2} stacks using atom probe tomography
Kunimune, Yorinobu, Shimada, Yasuhiro, Sakurai, Yusuke, Katayama, Toshiharu, Ide, Takashi, Inoue, Masao, Nishida, Akio, Han, Bin, Tu, Yuan, Takamizawa, Hisashi, Shimizu, Yasuo, Inoue, Koji, Nagai, Yasuyoshi, Yano, Fumiko
Published in AIP advances (15.04.2016)
Published in AIP advances (15.04.2016)
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Journal Article