Enhanced Carrier Injection Across S/D Contacts in Selenium Based TMD FETs Using KI & Metal Induced Gap-States Engineering
Hemanjaneyulu, Kuruva, Kumar, Jeevesh, Patbhaje, Utpreksh, Shrivastava, Mayank
Published in IEEE journal of the Electron Devices Society (01.01.2024)
Published in IEEE journal of the Electron Devices Society (01.01.2024)
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Journal Article
Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs
Patbhaje, Utpreksh, Verma, Rupali, Kumar, Jeevesh, Ansh, Shrivastava, Mayank
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition
Ansh, Ansh, Patbhaje, Utpreksh, Kumar, Jeevesh, Meersha, Adil, Shrivastava, Mayank
Published in Communications materials (07.02.2023)
Published in Communications materials (07.02.2023)
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Journal Article
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering
Dutta Gupta, Sayak, Soni, Ankit, Joshi, Vipin, Kumar, Jeevesh, Sengupta, Rudrarup, Khand, Heena, Shankar, Bhawani, Mohan, Nagaboopathy, Raghavan, Srinivasan, Bhat, Navakanta, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.06.2019)
Published in IEEE transactions on electron devices (01.06.2019)
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Journal Article
Role of Channel Inversion in Ambient Degradation of Phosphorene FETs
Kumar, Jeevesh, Patbhaje, Utpreksh, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.06.2022)
Published in IEEE transactions on electron devices (01.06.2022)
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Journal Article
MoS2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation
Hemanjaneyulu, Kuruva, Kumar, Jeevesh, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.07.2019)
Published in IEEE transactions on electron devices (01.07.2019)
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Journal Article
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution
Hemanjaneyulu, Kuruva, Meersha, Adil, Kumar, Jeevesh, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.04.2022)
Published in IEEE transactions on electron devices (01.04.2022)
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Journal Article
MoS 2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation
Hemanjaneyulu, Kuruva, Kumar, Jeevesh, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.07.2019)
Published in IEEE transactions on electron devices (01.07.2019)
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Journal Article
Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs
Kumar, Jeevesh, Meersha, Adil, Variar, Harsha B., Mishra, Abhishek, Shrivastava, Mayank
Published in IEEE transactions on electron devices (01.04.2022)
Published in IEEE transactions on electron devices (01.04.2022)
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Journal Article
MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation
Rai, Anand Kumar, Shah, Asif A., Kumar, Jeevesh, Chattaraj, Sumana, Dar, Aadil Bashir, Patbhaje, Utpreksh, Shrivastava, Mayank
Published in ACS nano (27.02.2024)
Published in ACS nano (27.02.2024)
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Journal Article
MoS 2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation
Rai, Anand Kumar, Shah, Asif A, Kumar, Jeevesh, Chattaraj, Sumana, Dar, Aadil Bashir, Patbhaje, Utpreksh, Shrivastava, Mayank
Published in ACS nano (27.02.2024)
Published in ACS nano (27.02.2024)
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Journal Article
Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices
Meersha, Adil, Kumar, Jeevesh, Mishra, Abhishek, Variar, Harsha B., Shrivastava, Mayank
Published in IEEE electron device letters (01.04.2023)
Published in IEEE electron device letters (01.04.2023)
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Journal Article