Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures
Hubáček, T., Hospodková, A., Oswald, J., Kuldová, K., Pangrác, J.
Published in Journal of crystal growth (15.04.2017)
Published in Journal of crystal growth (15.04.2017)
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Journal Article
Improvement of luminescence properties of n-GaN using TEGa precursor
Hubáček, T., Hospodková, A., Kuldová, K., Slavická Zíková, M., Pangrác, J., Čížek, J., Liedke, M.O., Butterilng, M., Wagner, A., Hubík, P., Hulicius, E.
Published in Journal of crystal growth (01.02.2020)
Published in Journal of crystal growth (01.02.2020)
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Journal Article
Impact of Ge doping on MOVPE grown InGaN layers
Hubáček, T., Kuldová, K., Gedeonová, Z., Hájek, F., Košutová, T., Banerjee, S., Hubík, P., Pangrác, J., Vaněk, T., Hospodková, A.
Published in Journal of crystal growth (15.02.2023)
Published in Journal of crystal growth (15.02.2023)
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Journal Article
The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study
Buryi, M., Babin, V., Hubáček, T., Jarý, V., Hájek, F., Kuldová, K., Artemenko, A., Hospodková, A.
Published in Radiation measurements (01.09.2022)
Published in Radiation measurements (01.09.2022)
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Journal Article
Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells
Hájek, F., Hospodková, A., Hubáček, T., Oswald, J., Pangrác, J., Dominec, F., Horešovský, R., Kuldová, K.
Published in Journal of luminescence (01.08.2021)
Published in Journal of luminescence (01.08.2021)
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Journal Article
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
Zíková, M., Hospodková, A., Pangrác, J., Hubáček, T., Oswald, J., Kuldová, K., Hájek, F., Ledoux, G., Dujardin, C.
Published in Journal of crystal growth (15.01.2019)
Published in Journal of crystal growth (15.01.2019)
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Journal Article
Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells
Buryi, M, Hubáček, T, Hájek, F, Jarý, V, Babin, V, Kuldová, K, Vaněk, T
Published in Journal of physics. Conference series (01.12.2022)
Published in Journal of physics. Conference series (01.12.2022)
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Journal Article
A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures
Hospodková, A., Hájek, F., Pangrác, J., Slavická Zíková, M., Hubáček, T., Kuldová, K., Oswald, J., Vaněk, T., Vetushka, A., Čížek, J., Liedke, M.O., Butterling, M., Wagner, A.
Published in Journal of crystal growth (15.04.2020)
Published in Journal of crystal growth (15.04.2020)
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Journal Article
On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure
Hospodková, A., Oswald, J., Zíková, M., Pangrác, J., Kuldová, K., Blažek, K., Ledoux, G., Dujardin, C., Nikl, M.
Published in Journal of applied physics (07.06.2017)
Published in Journal of applied physics (07.06.2017)
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Journal Article
Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition
Hospodková, A, Zíková, M, Pangrác, J, Oswald, J, Kubištová, J, Kuldová, K, Hazdra, P, Hulicius, E
Published in Journal of physics. D, Applied physics (06.03.2013)
Published in Journal of physics. D, Applied physics (06.03.2013)
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Journal Article
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
Hubáček, T., Hospodková, A., Oswald, J., Kuldová, K., Pangrác, J., Zíková, M., Hájek, F., Dominec, F., Florini, N., Komninou, Ph, Ledoux, G., Dujardin, C.
Published in Journal of crystal growth (01.02.2019)
Published in Journal of crystal growth (01.02.2019)
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Journal Article
Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
Hospodková, A., Oswald, J., Pangrác, J., Zíková, M., Kubištová, J., Komninou, Ph, Kioseoglou, J., Kuldová, K., Hulicius, E.
Published in Journal of applied physics (07.11.2013)
Published in Journal of applied physics (07.11.2013)
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Journal Article
Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures
Hospodková, A., Oswald, J., Pangrác, J., Kuldová, K., Zíková, M., Vyskočil, J., Hulicius, E.
Published in Physica. B, Condensed matter (01.01.2016)
Published in Physica. B, Condensed matter (01.01.2016)
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Journal Article
Optical properties of epitaxially grown GaN:Ge thin films
Buryi, M., Babin, V., Hubáček, T., Jarý, V., Hájek, F., Kuldová, K., Remeš, Z., Hospodková, A.
Published in Optical materials. X (01.10.2022)
Published in Optical materials. X (01.10.2022)
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Journal Article
Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy
Hospodková, A., Vyskočil, J., Pangrác, J., Oswald, J., Hulicius, E., Kuldová, K.
Published in Surface science (15.02.2010)
Published in Surface science (15.02.2010)
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Journal Article
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
Hospodková, A., Hulicius, E., Pangrác, J., Oswald, J., Vyskočil, J., Kuldová, K., Šimeček, T., Hazdra, P., Caha, O.
Published in Journal of crystal growth (01.04.2010)
Published in Journal of crystal growth (01.04.2010)
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Journal Article
Conference Proceeding
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
Hospodková, A., Pangrác, J., Oswald, J., Hazdra, P., Kuldová, K., Vyskočil, J., Hulicius, E.
Published in Journal of crystal growth (15.01.2011)
Published in Journal of crystal growth (15.01.2011)
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Journal Article
Conference Proceeding
Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
Hospodková, A., Hulicius, E., Oswald, J., Pangrác, J., Mates, T., Kuldová, K., Melichar, K., Šimeček, T.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding
InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
Hospodková, A., Pangrác, J., Vyskočil, J., Oswald, J., Vetushka, A., Caha, O., Hazdra, P., Kuldová, K., Hulicius, E.
Published in Journal of crystal growth (15.02.2011)
Published in Journal of crystal growth (15.02.2011)
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Journal Article