Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide
Goldman, E. I., Kukharskaya, N. F., Narishkina, V. G., Chucheva, G. V.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2011)
Get full text
Journal Article