Search Results - "Kuech, T. F" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Degradation of Hole Transport Materials via Exciton-Driven Cyclization

Degradation of Hole Transport Materials via Exciton-Driven Cyclization

by Bell, Bruce M, Clark, Michael B, Devore, David D, De Vries, Timothy S, Froese, Robert D, Gray, Kaitlyn C, Jackson, David H. K, Kuech, T. F, Na, Hong-Yeop, Kearns, Kenneth L, Lee, Kyung-Joo, Mukhopadhyay, Sukrit, Rachford, Aaron A, Spencer, Liam P, Woodward, W. H. Hunter
Published in ACS applied materials & interfaces (19.04.2017)

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Journal Article

InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions

InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions

by Mawst, L.J., Kirch, J.D., Chang, C.-C., Kim, T., Garrod, T., Botez, D., Ruder, S., Kuech, T.F., Earles, T., Tatavarti, R., Pan, N., Wibowo, A.
Published in Journal of crystal growth (01.05.2013)

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Journal Article Conference Proceeding

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

by Kim, T.W., Kuech, T.F., Mawst, L.J.
Published in Journal of crystal growth (01.11.2014)

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Journal Article

Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration

Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration

by Kim, T.W., Forghani, K., Mawst, L.J., Kuech, T.F., LaLumondiere, S.D., Sin, Y., Lotshaw, W.T., Moss, S.C.
Published in Journal of crystal growth (01.05.2014)

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Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy

Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy

by Schulte, Kevin L., Garrod, Toby J., Wan Kim, Tae, Kirch, Jeremy, Ruder, Steven, Mawst, Luke J., Kuech, T.F.
Published in Journal of crystal growth (01.05.2013)

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Journal Article Conference Proceeding

Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments

Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments

by DWIKUSUMA, F, SAULYS, D, KUECH, T. F
Published in Journal of the Electrochemical Society (01.11.2002)

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Journal Article

Planarization and Processing of Metamorphic Buffer Layers Grown by Hydride Vapor-Phase Epitaxy

Planarization and Processing of Metamorphic Buffer Layers Grown by Hydride Vapor-Phase Epitaxy

by Zutter, Brian T., Schulte, Kevin L., Kim, Tae Wan, Mawst, Luke J., Kuech, T. F., Foran, Brendan, Sin, Yongkun
Published in Journal of electronic materials (01.04.2014)

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X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

by Dwikusuma, F., Kuech, T. F.
Published in Journal of applied physics (01.11.2003)

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Journal Article

Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission

Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission

by Huang, J Y T, Mawst, L J, Kuech, T F, Song, X, Babcock, S E, Kim, C S, Vurgaftman, I, Meyer, J R, Holmes, A L
Published in Journal of physics. D, Applied physics (21.01.2009)

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Journal Article

Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications

Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications

by Garrod, T.J., Kirch, J., Dudley, P., Kim, S., Mawst, L.J., Kuech, T.F.
Published in Journal of crystal growth (15.01.2011)

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Journal Article Conference Proceeding

Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

by Kim, T.W., Garrod, T.J., Mawst, L.J., Kuech, T.F., LaLumondiere, S.D., Sin, Y., Lotshaw, W.T., Moss, S.C.
Published in Journal of crystal growth (01.05.2013)

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A comparative precursor study of the growth behavior of InSb using metal-organic vapor phase epitaxy

A comparative precursor study of the growth behavior of InSb using metal-organic vapor phase epitaxy

by Jha, Smita, Wiedmann, Monika K., Kuech, T.F.
Published in Journal of crystal growth (15.01.2011)

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Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces

Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces

by GRABOW, L. C, UHLRICH, J. J, KUECH, T. F, MAVRIKAKIS, M
Published in Surface science (15.01.2009)

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Journal Article

Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers

Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers

by Park, J.H., Khandekar, A.A., Park, S.M., Mawst, L.J., Kuech, T.F., Nealey, P.F.
Published in Journal of crystal growth (29.12.2006)

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Journal Article

Practical Surface Treatments and Surface Chemistry of n-Type and p-Type GaN

Practical Surface Treatments and Surface Chemistry of n-Type and p-Type GaN

by Uhlrich, J.J., Grabow, L.C., Mavrikakis, M., Kuech, T.F.
Published in Journal of electronic materials (01.04.2008)

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Journal Article

X-ray photoemission determination of the Schottky barrier height of metal contacts to n –GaN and p –GaN

X-ray photoemission determination of the Schottky barrier height of metal contacts to n –GaN and p –GaN

by Rickert, K. A., Ellis, A. B., Kim, Jong Kyu, Lee, Jong-Lam, Himpsel, F. J., Dwikusuma, F., Kuech, T. F.
Published in Journal of applied physics (01.12.2002)

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Journal Article

Growth behavior and defect reduction in heteroepitaxial InAs and GaSb on GaAs using block copolymer lithography

Growth behavior and defect reduction in heteroepitaxial InAs and GaSb on GaAs using block copolymer lithography

by Jha, Smita, Wiedmann, Monika K., Kuan, T.S., Song, Xueyan, Babcock, S.E., Kuech, T.F.
Published in Journal of crystal growth (15.01.2011)

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Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy

Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy

by Jha, Smita, Song, Xueyan, Babcock, S.E., Kuech, T.F., Wheeler, Dane, Wu, Bin, Fay, P., Seabaugh, Alan
Published in Journal of crystal growth (15.11.2008)

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Journal Article Conference Proceeding

Interfacial chemistry of InP/GaAs bonded pairs

Interfacial chemistry of InP/GaAs bonded pairs

by LIU, N, KUECH, T. F
Published in Journal of electronic materials (01.03.2007)

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Journal Article

Interfacial chemistry and energy band line-up of pentacene with the GaN (0 0 0 1) surface

Interfacial chemistry and energy band line-up of pentacene with the GaN (0 0 0 1) surface

by Uhlrich, J., Garcia, M., Wolter, S., Brown, A.S., Kuech, T.F.
Published in Journal of crystal growth (01.03.2007)

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