Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes
Kohno, Takakazu, Sudo, Yasuhiro, Yamauchi, Masaki, Mitsui, Kazuya, Kudo, Hiromitsu, Okagawa, Hiroaki, Yamada, Yoichi
Published in Japanese Journal of Applied Physics (01.07.2012)
Published in Japanese Journal of Applied Physics (01.07.2012)
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Journal Article
Intense Ultraviolet Electroluminescence Properties of the High-Power InGaN-Based Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
Kudo, Hiromitsu, Murakami, Kenji, Zheng, Ruisheng, Yamada, Yoichi, Taguchi, Tsunemasa, Tadatomo, Kazuyuki, Okagawa, Hiroaki, Ohuchi, Youichiro, Tsunekawa, Takashi, Imada, Yoshiyuki, Kato, Munehiro
Published in Japanese Journal of Applied Physics (01.04.2002)
Published in Japanese Journal of Applied Physics (01.04.2002)
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Journal Article
Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes
Kohno, Takakazu, Sudo, Yasuhiro, Yamauchi, Masaki, Mitsui, Kazuya, Kudo, Hiromitsu, Okagawa, Hiroaki, Yamada, Yoichi
Published in Japanese Journal of Applied Physics (01.07.2012)
Published in Japanese Journal of Applied Physics (01.07.2012)
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Journal Article
High Output Power Near-Ultraviolet and Violet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy
TADATOMO, Kazuyuki, OKAGAWA, Hiroaki, OHUCHI, Youichiro, TSUNEKAWA, Takashi, KUDO, Hiromitsu, SUDO, Yasuhide, KATO, Munehiro, TAGUCHI, Tsunemasa
Published in Journal of Light & Visual Environment (2003)
Published in Journal of Light & Visual Environment (2003)
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Journal Article
Ultraviolet emission properties in InxGa1−xN epitaxial layer revealed by magnetoluminescence and time-resolved luminescence studies
Kudo, Hiromitsu, Ishibashi, Hiroki, Zheng, Ruisheng, Yamada, Yoichi, Taguchi, Tsunemasa, Nakamura, Shuji, Shinomiya, Genichi
Published in Journal of luminescence (01.05.2000)
Published in Journal of luminescence (01.05.2000)
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Journal Article
GAN LED DEVICE AND METHOD FOR MANUFACTURING THE SAME
SHIMA, TOSHIHIKO, JOUICHI, TAKAHIDE, MIYASHITA, KEIJI, HIRAOKA, SHIN, KOTO, MASAHIRO, KUDO, HIROMITSU, OKAGAWA, HIROAKI
Year of Publication 20.08.2009
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Year of Publication 20.08.2009
Patent
NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
YAMADA, TOMOO, OUCHI, YOICHIRO, KUDO, HIROMITSU, OKAGAWA, HIROAKI, TADATOMO, KAZUYUKI
Year of Publication 10.11.2005
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Year of Publication 10.11.2005
Patent
NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE DEVICE
SHIMA, TOSHIHIKO, HIRAOKA, SHIN, KUDO, HIROMITSU, OKAGAWA, HIROAKI, JOICHI, TAKAHIDE, TANIGUCHI, HIROKAZU
Year of Publication 24.04.2008
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Year of Publication 24.04.2008
Patent
Ultraviolet emission properties in In xGa 1− xN epitaxial layer revealed by magnetoluminescence and time-resolved luminescence studies
Kudo, Hiromitsu, Ishibashi, Hiroki, Zheng, Ruisheng, Yamada, Yoichi, Taguchi, Tsunemasa, Nakamura, Shuji, Shinomiya, Genichi
Published in Journal of luminescence (2000)
Published in Journal of luminescence (2000)
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Journal Article
Blue radiative recombination due to hot electrons in InGaN single-quantum well LEDs
Kudo, Hiromitsu, Yamada, Yoichi, Taguchi, Tsunemasa
Published in Journal of crystal growth (15.06.1998)
Published in Journal of crystal growth (15.06.1998)
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Journal Article
Demonstration of high-efficient InGaN-based violet light-emitting diodes with an external-quantum efficiency of more than 40
Kudo, H, Ohuchi, Y, Jyouichi, T, Tsunekwa, T, Okagawa, H, Tadatomo, K, Sudo, Y, Kato, M, Taguchi, T
Published in Physica status solidi. C (01.11.2003)
Published in Physica status solidi. C (01.11.2003)
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