Investigation into HCl improvement by a split-reeessed-gate structure in an STI-based nLDMOSFET
Mori, Takahiro, Fujii, Hiroki, Kubo, Shunji, Ipposhi, Takashi
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
A 90nm bulk BiCDMOS platform technology with 15-80V LD-MOSFETs for automotive applications
Fujii, Hiroki, Tokumitsu, Shigeo, Mori, Takahiro, Yamashita, Tomohiro, Maruyama, Takahiro, Maruyama, Takuya, Maruyama, Yoshiki, Nishimoto, Shigeki, Arie, Hiroyuki, Kubo, Shunji, Ipposhi, Takashi
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
SEMICONDUCTOR DEVICE
IIDA, Tetsuya, IO, Eiji, KUBO, Shunji, TAJIMA, Hideyuki, ANDO, Koichi
Year of Publication 03.06.2021
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Year of Publication 03.06.2021
Patent