Activation of Mg implanted in GaN by multicycle rapid thermal annealing
Anderson, T.J, Feigelson, B.N, Kub, F.J, Tadjer, M.J, Hobart, K.D, Mastro, M.A, Hite, J.K, Eddy, C.R
Published in Electronics letters (30.01.2014)
Published in Electronics letters (30.01.2014)
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Journal Article
Long range, non-destructive characterization of GaN substrates for power devices
Gallagher, J.C., Anderson, T.J., Luna, L.E., Koehler, A.D., Hite, J.K., Mahadik, N.A., Hobart, K.D., Kub, F.J.
Published in Journal of crystal growth (15.01.2019)
Published in Journal of crystal growth (15.01.2019)
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Journal Article
An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
Nepal, N., Goswami, R., Qadri, S.B., Mahadik, N.A., Kub, F.J., Eddy, C.R.
Published in Scripta materialia (15.12.2014)
Published in Scripta materialia (15.12.2014)
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Journal Article
GaN vertical and lateral polarity heterostructures on GaN substrates
Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.
Published in Journal of crystal growth (01.10.2011)
Published in Journal of crystal growth (01.10.2011)
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Journal Article
Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in Journal of electronic materials (01.05.2010)
Published in Journal of electronic materials (01.05.2010)
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Journal Article
Ultrathin strained-SOI by stress balance on compliant substrates and FET performance
Haizhou Yin, Hobart, K.D., Peterson, R.L., Kub, F.J., Sturm, J.C.
Published in IEEE transactions on electron devices (01.10.2005)
Published in IEEE transactions on electron devices (01.10.2005)
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Journal Article
Wafer-Bonded Silicon Gamma-Ray Detectors
Wulf, E.A., Phlips, B.F., Hobart, K.D., Kub, F.J., Kurfess, J.D.
Published in IEEE transactions on nuclear science (01.04.2008)
Published in IEEE transactions on nuclear science (01.04.2008)
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Journal Article
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
Feigelson, B.N., Anderson, T.J., Abraham, M., Freitas, J.A., Hite, J.K., Eddy, C.R., Kub, F.J.
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Journal Article
Conference Proceeding
Reply to comments on “An extended hardness limit in bulk nanoceramics”, Acta Materialia 69 (2014) 9–16
Wollmershauser, J.A., Feigelson, B.N., Gorzkowski, E.P., Ellis, C.T., Goswami, R., Qadri, S.B., Nguyen, Dat D., Tischler, J.G., Kub, F.J., Everett, R.K.
Published in Scripta materialia (01.12.2014)
Published in Scripta materialia (01.12.2014)
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Journal Article
Fabrication of Silicon-on-Diamond (SOD) Substrates
Feygelson, T., Hobart, K., Ancona, M., Kub, F.J., Butler, J.E.
Published in Meeting abstracts (Electrochemical Society) (22.02.2006)
Published in Meeting abstracts (Electrochemical Society) (22.02.2006)
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Journal Article
Thick homoepitaxial GaN with low carrier concentration for high blocking voltage
Freitas, J.A., Mastro, M.A., Imhoff, E.A., Tadjer, M.J., Eddy, C.R., Kub, F.J.
Published in Journal of crystal growth (01.09.2010)
Published in Journal of crystal growth (01.09.2010)
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Journal Article
Improved GaN-based HEMT performance by nanocrystalline diamond capping
Anderson, T.J., Pate, B.B., Binari, S.C., Eddy, C.R., Hobart, K.D., Tadjer, M.J., Feygelson, T.I., Imhoff, E.A., Meyer, D.J., Katzer, D.S., Hite, J.K., Kub, F.J.
Published in 70th Device Research Conference (01.06.2012)
Published in 70th Device Research Conference (01.06.2012)
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Conference Proceeding
Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation
Tadjer, M.J., Hobart, K.D., Stahlbush, R.E., McMarr, P.J., Hughes, H.L., Imhoff, E.A., Kub, F.J., Haney, S.K.
Published in 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) (01.10.2009)
Published in 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) (01.10.2009)
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Conference Proceeding
Thick position-sensitive silicon detectors using a wafer bonding technique
Phlips, B.F., Kurfess, J.D., Kub, F.J., Hobart, K.D.
Published in IEEE Nuclear Science Symposium Conference Record, 2005 (2005)
Published in IEEE Nuclear Science Symposium Conference Record, 2005 (2005)
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Conference Proceeding
Silicon carbide pin diodes as radiation detectors
Phlips, B.F., Hobart, K.D., Kub, F.J., Stahlbush, R.E., Das, M.K., Hull, B.A., De Geronimo, G., O'Connor, P.
Published in IEEE Nuclear Science Symposium Conference Record, 2005 (2005)
Published in IEEE Nuclear Science Symposium Conference Record, 2005 (2005)
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Conference Proceeding
Wafer-Bonded Silicon Gamma-Ray Detectors
Wulf, E.A., Hobart, K.D., Kub, F.J., Kurfess, J.D., Phlips, B.F., Tadjer, M.
Published in 2006 IEEE Nuclear Science Symposium Conference Record (01.10.2006)
Published in 2006 IEEE Nuclear Science Symposium Conference Record (01.10.2006)
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Conference Proceeding
[formula omitted] heterojunction bipolar transistors for microwave power applications
Hobart, K.D., Kub, F.J., Papanicoloau, N.A., Kruppa, W., Thompson, P.E.
Published in Journal of crystal growth (01.12.1995)
Published in Journal of crystal growth (01.12.1995)
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Journal Article