UV Assisted Densification of Perhydropolysilazane (PHPS) Based Spin-On Glass in High Aspect Ratio Gap Fill Structure
Mehta, Sanjay, Sheng, Haifeng, Krishnan, Rishikesh, Haran, Bala, Han, Tao, Bayindir, Zeynel, Berardi, Marc, Yatzor, Brett, Liu, Jinping, Shepard, Joseph, Grunow, Stephan
Published in ECS transactions (19.06.2018)
Published in ECS transactions (19.06.2018)
Get full text
Journal Article
Polarization surface-charge density of single semiconductor quantum rods
Krishnan, Rishikesh, Hahn, Megan A, Yu, Zhiheng, Silcox, John, Fauchet, Philippe M, Krauss, Todd D
Published in Physical review letters (28.05.2004)
Published in Physical review letters (28.05.2004)
Get more information
Journal Article
Optical Properties of Colloidal PbSe Nanocrystals
Du, Hui, Chen, Chialing, Krishnan, Rishikesh, Krauss, Todd D, Harbold, Jeffrey M, Wise, Frank W, Thomas, Malcolm G, Silcox, John
Published in Nano letters (01.11.2002)
Published in Nano letters (01.11.2002)
Get full text
Journal Article
Low Temperature Microwave Anneal in FinFET Fabrication
Kassim, Joseph, Lee, Rinus T.P., Krishnan, Rishikesh, Ferrer, Domingo, Yang, Jie, Shusterman, Yuriy, Ramirez, Isreal, Liu, Huang, Lui, Jinping, Krishnan, Bharat
Published in ECS transactions (20.07.2018)
Published in ECS transactions (20.07.2018)
Get full text
Journal Article
Modeling and Characterization of Gate Leakage in High-K Metal Gate Technology-Based Embedded DRAM
Bajaj, Mohit, Pandey, Rajan K., De, Sandip, Sathaye, Ninad D., Jayaraman, Balaji, Krishnan, Rishikesh, Goyal, Puneet, Furkay, Stephen S., Nowak, Edward J., Iyer, Subramanian S., Murali, Kota V. R. M.
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
Get full text
Journal Article
Characterization and optimization of charge trapping in high-k dielectrics
Cartier, E., Ando, T., Hopstaken, M., Narayanan, V., Krishnan, R., Shepard, J. F., Sullivan, M. D., Krishnan, S., Chudzik, M. P., De, S., Pandey, R., Bajaj, M., Murali, K. V. R. M., Kerber, A.
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Get full text
Conference Proceeding
Stacked fets with non-shared work function metals
Ruqiang Bao, Rishikesh Krishnan, Ruilong Xie, Julien Frougier, Balasubramanian Pranatharthiharan, Dechao Guo, Junli Wang
Year of Publication 28.08.2024
Get full text
Year of Publication 28.08.2024
Patent
Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance
Zhao, Kai, Krishnan, Rishikesh, Siddiqui, Shahab, Adams, Charlotte DeWan, Dechene, Daniel James
Year of Publication 20.08.2024
Get full text
Year of Publication 20.08.2024
Patent
INTEGRATED CIRCUIT WITH BACKSIDE POWER RAILS
XIE, Ruilong, REZNICEK, Alexander, SIEG, Stuart, GHOSH, Somnath, KRISHNAN, Rishikesh, CHOI, Kisik
Year of Publication 07.08.2024
Get full text
Year of Publication 07.08.2024
Patent
Performance analysis and modeling of deep trench decoupling capacitor for 32 nm high-performance SOI processors and beyond
Jayaraman, B., Gupta, S., Yanli Zhang, Goyal, P., Ho, H., Krishnan, R., Sunfei Fang, Sungjae Lee, Daley, D., McStay, K., Wunder, B., Barth, J., Deshpande, S., Parries, P., Malik, R., Agnello, P., Stiffler, S., Iyer, S. S.
Published in 2012 IEEE International Conference on IC Design & Technology (01.05.2012)
Published in 2012 IEEE International Conference on IC Design & Technology (01.05.2012)
Get full text
Conference Proceeding
Buried power rails located in a base layer including first, second, and third etch stop layers
Choi, Kisik, Sieg, Stuart, Xie, Ruilong, Krishnan, Rishikesh, Reznicek, Alexander, Ghosh, Somnath
Year of Publication 21.05.2024
Get full text
Year of Publication 21.05.2024
Patent
Gate oxide for nanosheet transistor devices
Zhao, Kai, Krishnan, Rishikesh, Siddiqui, Shahab, Adams, Charlotte DeWan, Watanabe, Koji, Dechene, Daniel James
Year of Publication 30.01.2024
Get full text
Year of Publication 30.01.2024
Patent
STACKED FETS WITH NON-SHARED WORK FUNCTION METALS
XIE, Ruilong, GUO, Dechao, PRANATHARTHIHARAN, Balasubramanian, WANG, Junli, BAO, Ruqiang, FROUGIER, Julien, KRISHNAN, Rishikesh
Year of Publication 15.06.2023
Get full text
Year of Publication 15.06.2023
Patent
STACKED FETS WITH NON-SHARED WORK FUNCTION METALS
Wang, Junli, Xie, Ruilong, Pranatharthiharan, Balasubramanian S, Krishnan, Rishikesh, Guo, Dechao, Frougier, Julien, Bao, Ruqiang
Year of Publication 08.06.2023
Get full text
Year of Publication 08.06.2023
Patent
INTEGRATED CIRCUIT WITH BACKSIDE POWER RAILS
XIE, Ruilong, REZNICEK, Alexander, SIEG, Stuart, GHOSH, Somnath, KRISHNAN, Rishikesh, CHOI, Kisik
Year of Publication 06.04.2023
Get full text
Year of Publication 06.04.2023
Patent
BACKSIDE POWER RAILS
Choi, Kisik, Sieg, Stuart, Xie, Ruilong, Krishnan, Rishikesh, Reznicek, Alexander, Ghosh, Somnath
Year of Publication 30.03.2023
Get full text
Year of Publication 30.03.2023
Patent
PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED EPITAXIAL SOURCE/DRAIN, SHARP JUNCTION GRADIENT, AND/OR REDUCED PARASITIC CAPACITANCE
Zhao, Kai, Krishnan, Rishikesh, Siddiqui, Shahab, Adams, Charlotte DeWan, Dechene, Daniel James
Year of Publication 02.02.2023
Get full text
Year of Publication 02.02.2023
Patent
Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance
Zhao, Kai, Krishnan, Rishikesh, Siddiqui, Shahab, Adams, Charlotte DeWan, Dechene, Daniel James
Year of Publication 29.11.2022
Get full text
Year of Publication 29.11.2022
Patent